IXYS VHFD29-16IO1, VHFD29-14IO1, VHFD29-08IO1, VHFD29-12IO1 Datasheet

VHFD 29
Half Controlled Single Phase Rectifier Bridge
Including Freewheeling Diode and Field Diodes
V
RSM
V
DSM
VV
900 800 VHFD 29-08io1 1300 1200 VHFD 29-12io1 1500 1400 VHFD 29-14io1 1700 1600 VHFD 29-16io1
Bridge and Freewheeling Diode
dAV
I
module 32 A
dAVM
I
, I
FRMS
I
, I
FSM
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 440 A2s
(di/dt)
(dv/dt)
V
RGM
P
GM
P
GAVM
T
VJ
T
VJM
T
stg
V
ISOL
d
S
d
A
a Max. allowable acceleration 50 m/s M
d
Weight 35 g
TSM
TRMS
cr
cr
V
RRM
V
DRM
Type
TH = 85°C, module 28 A per leg 25 A
TVJ = 45°C; t = 10 ms (50 Hz), sine 300 A VR = 0 V t = 8.3 ms (60 Hz), sine 330 A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 270 A
VR = 0 V t = 8.3 ms (60 Hz), sine 300 A
VR = 0 V t = 8.3 ms (60 Hz), sine 455 A2s TVJ = T
VJM
t = 10 ms (50 Hz), sine 365 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 370 A2s TVJ = 125°C repetitive, IT = 50 A 150 A/ms
f = 50 Hz, tP = 200 ms VD = 2/3 V IG = 0.3 A, non repetitive, IT = 0.5 I
DRM
dAV
500 A/ms
diG/dt = 0.3 A/ms TVJ = T
; VDR = 2/3 V
(vj)m
DRM
1000 V/ms
RGK = ¥; method 1 (linear voltage rise)
10 V
TVJ = T IT = 0.5 I
VJM
dAVM
tp = 30 ms £ 10 W tp = 500 ms £ 5W tp = 10 ms £ 1W
0.5 W
-40...+125 °C 125 °C
-40...+125 °C
50/60 Hz, RMS t = 1 min 3000 V~ I
£ 1 mA t = 1 s 3600 V~
ISOL
Creep distance on surface 12.7 mm Strike distance in air 9.4 mm
Mounting torque (M5) 2-2.5 Nm
(10-32 UNF) 18-22 lb.in.
V I
dA VM
= 800-1600 V
RRM
= 32 A
3
2
1
6
5
8
Features
Package with DCB ceramic base plate
Isolation voltage 3600 V~
Planar passivated chips
Blocking voltage up to 1600 V
Low forward voltage drop
Leads suitable for PC board soldering
UL registered E 72873
Applications
Supply for DC power equipment
DC motor control
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power cycling
Dimensions in mm (1 mm = 0.0394")
2
10
© 2000 IXYS All rights reserved
1 - 3
VHFD 29
Symbol Test Conditions Characteristic Values
, I
I
R
D
VR = V
RRM
; VD = V
DRMTVJ
= T
VJM
£ 5mA
TVJ = 25°C £ 0.3 mA
, V
V
T
F
V
T0
r
T
V
GT
IT, IF = 45 A; TVJ = 25°C £ 1.6 V For power-loss calculations only (TVJ = 125°C) 0.9 V
15 mW
VD = 6 V; TVJ = 25°C £ 1.0 V
TVJ = -40°C £ 1.2 V
I
GT
VD = 6 V; TVJ = 25°C £ 65 mA
TVJ = -40°C £ 80 mA TVJ = 125°C £ 50 mA
V
GD
I
GD
I
L
TVJ = T TVJ = T
IG = 0.3 A; tG = 30 ms; TVJ = 25°C £ 150 mA
;V
VJM
;V
VJM
= 2/3 V
D
= 2/3 V
D
DRM DRM
£ 0.2 V £ 5mA
diG/dt = 0.3 A/ms; TVJ = -40°C £ 200 mA
TVJ = 125°C £ 100 mA
I
H
t
gd
TVJ = 25°C; VD = 6 V; RGK = ¥£100 mA TVJ = 25°C; VD = 0.5V
DRM
£ 2 ms
IG = 0.3 A; diG/dt = 0.3 A/ms
t
q
Q
r
R
thJC
TVJ = 125°C, IT = 15 A, tP = 300 ms, VR = 100 V typ. 150 ms di/dt = -10 A/ms, dv/dt = 20 V/ms, VD = 2/3 V
DRM
75 mC
per thyristor (diode); DC current 1.4 K/W per module 0.35 K/W
R
thJH
per thyristor (diode); DC current 2.0 K/W per module 0.5 K/W
10
1: I
, T
= 125°C
GT
VJ
2: I
, T
= 25°C
GT
V
V
G
1
0.1
VJ
, T
= -40°C
3: I
GT
VJ
3
2
1
I
, T
= 125°C
GD
VJ
1 10 100 1000
Fig. 1 Gate trigger range
1000
µs
t
gd
100
typ.
Limit
4: P 5: P 6: P
6
5
4
= 0.5 W
GAV
= 1 W
GM
= 10 W
GM
I
mA
G
T
= 25°C
VJ
Field Diodes
Symbol Test Conditions Maximum Ratings I
FAV
I
FAVM
I
FRMS
I
FSM
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 50 A2s
I
R
V
F
V
T0
r
T
R
thJC
R
thJH
TH = 85°C, per Diode 4 A per diode 4 A per diode 6 A
TVJ = 45°C; t = 10 ms (50 Hz), sine 100 A VR = 0 V t = 8.3 ms (60 Hz), sine 110 A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 85 A
VR = 0 V t = 8.3 ms (60 Hz), sine 94 A
VR = 0 V t = 8.3 ms (60 Hz), sine 50 A2s TVJ = T
VJM
t = 10 ms (50 Hz), sine 36 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 37 A2s VR = V
RRM
TVJ = T
VJM
1mA
TVJ = 25°C 0.15 mA IF = 21 A; TVJ = 25°C 1.83 V For power-loss calculations only (TVJ = 125°C) 0.9 V
50 mW
per diode; DC current 4.4 K/W per diode; DC current 5.2 K/W
10
1
10 100 1000
mA
I
G
Fig. 2 Gate controlled delay time t
gd
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. for resistive load IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
750
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