IXYS VCD105-18IO7, VCD105-16IO7, VCD105-14IO7, VCD105-08IO7, VCD105-12IO7 Datasheet
VCD 105
Thyristor/Diode Modules
ECO-PA C
Preliminary Data
V
RSM
V
DSM
VV
900 800 VCD 105 - 08io7
1300 1200 VCD 105 - 12io7
1500 1400 VCD 105 - 14io7
1700 1600 VCD 105 - 16io7
1900 1800 VCD 105 - 18io7
Symbol Conditions Maximum Ratings
I
TRMS
I
TAVM
I
TSM
V
RRM
V
DRM
Typ
180 A
TC = 85°C; 180° sine 105 A
TVJ = 45°C; VR = 0 V; t = 10 ms (50 Hz), sine 2250 A
t = 8.3 ms (60 Hz), sine 2400 A
I
TRMS
I
TAVM
V
= 2x180A
= 2x105A
= 800 - 1800 V
RRM
Features
• Isolation voltage 3600 V~
• Planar glass passivated chips
• Low forward voltage drop
• Leads suitable for PC board soldering
TVJ = 125°C; VR = 0 V; t = 10 ms (50 Hz), sine 2000 A
t = 8.3 ms (60 Hz), sine 2150 A
I2dt TVJ = 45°C; VR = 0 V; t = 10 ms (50 Hz), sine 25300 A2s
t = 8.3 ms (60 Hz), sine 23900 A2s
TVJ = 125°C; VR = 0 V; t = 10 ms (50 Hz), sine 20000 A2s
t = 8.3 ms (60 Hz), sine 19100 A2s
(di/dt)
cr
TVJ = 125°C; repetitive, IT = 250 A 150 A/µs
f = 50 Hz; tP = 200 µs;
VD = 2/3V
IG = 0.45 A non repetitive, IT = I
DRM
;
TAVM
500 A/µs
diG/dt = 0.45 A/µs;
(dv/dt)
TVJ = 125°C; VDR = 2/3V
cr
DRM
1000 V/µs
RGK = ∞, method 1 (linear voltage rise)
P
P
V
T
T
T
V
M
GM
GAVM
RGM
VJ
VJM
stg
ISOL
d
TVJ = 125°C; tP = 30 ms ≤ 10 W
IT = I
;t
TAVM
= 300 ms ≤ 5 W
P
0.5 W
10 V
-40 ... + 125 °C
125 °C
-40 ... + 125 °C
50/60 Hz, RMS t = 1 min 3000 V ~
I
< 1 mA t = 1 s 3600 V ~
ISOL
Mounting torque (M4) 1.5 - 2.0 Nm
14 - 18 lb.in.
Applications
• DC motor control
• Light and temperature control
• Softstart AC motor controller
• Solid state switches
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling
• High power density
• Small and light weight
Weight typ. 26 g
Data according to IEC 60747 refer to a single thyristor unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
135
1 - 2
Component
Symbol Conditions Characteristic Values
min. typ. max.
VCD 105
ID, I
V
V
r
T
V
R
T
TO
GT
TVJ = 125°C; VR = V
RRM
; VD = V
DRM
5mA
IT = 300 A; TVJ = 25°C 1.5 V
For power-loss calculations only 0.8 V
2.4 mΩ
VD = 6 V; TVJ = 25°C 1.5 V
TVJ = -40°C 1.6 V
I
GT
VD = 6 V; TVJ = 25°C 150 mA
TVJ = -40°C 200 mA
V
GD
I
GD
I
L
TVJ = 125°C; VD = 2/3V
TVJ = 125°C; VD = 2/3V
DRM
DRM
0.2 V
10 mA
TVJ = 25°C; tP = 10 ms 450 mA
IG = 0.45 A; diG/dt = 0.45 A/µs
I
H
t
gd
TVJ = 25°C; VD = 6 V; RGK = ∞ 200 mA
TVJ = 25°C; VD = ½ V
DRM
2 µs
IG = 0.45 A; diG/dt = 0.45 A/µs
R
thJC
per Thyristor; DC 0.26 K/W
per module 0.13 K/W
R
thCH
per Thyristor; DC 0,2 K/W
per module 0,1 K/W
d
S
d
A
Creeping distance on surface 11.2 mm
Creeping distance in air 5.0 mm
a Max. allowable acceleration 50 m/s
2
Dimensions in mm (1 mm = 0.0394")
© 2001 IXYS All rights reserved
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