IXYS VBO40-16NO6, VBO40-14NO6, VBO40-12NO6, VBO40-08NO6 Datasheet
© 2000 IXYS All rights reserved
1 - 2
Symbol Test Conditions Maximum Ratings
I
dAV
TC = 100°C (diode) 20 A
I
dAV
① (module) 40 A
I
FSM
TVJ = 45°C; t = 10 ms (50 Hz), sine 300 A
VR = 0 t = 8.3 ms (60 Hz), sine 320 A
TVJ = T
VJM
t = 10 ms (50 Hz), sine 260 A
VR = 0 t = 8.3 ms (60 Hz), sine 280 A
I
2
t TVJ = 45°C t = 10 ms (50 Hz), sine 450 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 430 A2s
TVJ = T
VJM
t = 10 ms (50 Hz), sine 340 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 330 A2s
T
VJ
-40...+150 °C
T
VJM
150 °C
T
stg
-40...+125 °C
V
ISOL
50/60 Hz, RMS I
ISOL
£ 1 mA 2500 V~
M
d
Mounting torque (M4) 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.
Weight typ. 30 g
V
RSM
V
RRM
Standard
V V Types
900 800 VBO 40-08NO6
1300 1200 VBO 40-12NO6
1700 1600 VBO 40-16NO6
I
dA V
= 40 A
V
RRM
= 800-1600 V
Features
●
Isolation voltage 2500 V~
●
Planar passivated chips
●
Low forward voltage drop
Applications
●
Supplies for DC power equipment
●
Input rectifiers for PWM inverter
●
Battery DC power supplies
●
Field supply for DC motors
Advantages
●
Easy to mount
●
Space and weight savings
Data according to IEC 60747 and refer to a single diode unless otherwise stated
① for resistive load at bridge output
Symbol Test Conditions Characteristic Values
I
R
VR= V
RRM
;T
VJ
= 25°C £ 0.3 mA
VR= V
RRM
;T
VJ
= T
VJM
£ 5mA
V
F
IF= 20 A; TVJ = 25°C £ 1.15 V
V
T0
For power-loss calculations only 0.80 V
r
T
TVJ = T
VJM
13 mW
R
thJC
per diode; DC current 1.7 K/W
per module 0.42 K/W
R
thCH
per diode, DC current typ. 0.3 K/W
per module typ. 0.08 K/W
d
S
Creeping distance on surface 8 mm
d
A
Creepage distance in air ③ 4mm
a Max. allowable acceleration 50 m/s
2
VBO 40
Single Phase
Rectifier Bridge
008
+
–
~
~
~
~
–
+
miniBLOC, SOT-227 B
E72873
M4 screws (4x)
supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 37.80 38.30 1.489 1.509
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
V 3.30 4.57 0.130 0.180
W 0.780 0.830 19.81 21.08
© 2000 IXYS All rights reserved
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0.001 0.01 0.1 1
0
50
100
150
200
250
23456789110
10
1
10
2
10
3
0.00.51.01.52.0
0
10
20
30
40
50
60
70
80
0 102030405060
0
40
80
120
160
200
0 20 40 60 80 100 120 140
0.001 0.01 0.1 1 10
0.0
0.4
0.8
1.2
1.6
2.0
I2t
I
FSM
I
F
A
V
F
t
s
t
ms
P
tot
W
I
d(AV)M
A
T
amb
t
s
K/W
A
2
s
0 20 40 60 80 100 120 140
0
10
20
30
40
50
I
d(AV)M
T
C
A
V
A
°C °C
VBO 40
T
VJ
= 45°C
50Hz, 80% V
RRM
VR = 0 V
Fig. 1 Forward current versus voltage
drop per diode
Fig. 2 Surge overload current Fig. 3 I2t versus time per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 5 Max. forward current versus case
temperature
Fig. 6 Transient thermal impedance junction to case
R
thHA
:
0.1 K/W
0.5 K/W
1.0 K/W
2.0 K/W
4.0 K/W
7.0 K/W
T
VJ
= 150°C
T
VJ
= 45°C
TVJ=125°C
TVJ= 25°C
T
VJ
= 150°C
Z
thJC
Constants for Z
thJC
calculation:
iR
thi
(K/W) ti (s)
1 0.081 0.00024
2 0.1449 0.0036
3 0.2982 0.0235
4 0.735 0.142
5 0.441 0.7
VBO 40
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