IXYS VBO40-16NO6, VBO40-14NO6, VBO40-12NO6, VBO40-08NO6 Datasheet

© 2000 IXYS All rights reserved

1 - 2

Symbol Test Conditions Maximum Ratings
I

dAV

TC = 100°C (diode) 20 A

I

dAV

① (module) 40 A

I

FSM

TVJ = 45°C; t = 10 ms (50 Hz), sine 300 A
VR = 0 t = 8.3 ms (60 Hz), sine 320 A

TVJ = T

VJM

t = 10 ms (50 Hz), sine 260 A

VR = 0 t = 8.3 ms (60 Hz), sine 280 A

I

2

t TVJ = 45°C t = 10 ms (50 Hz), sine 450 A2s

VR = 0 t = 8.3 ms (60 Hz), sine 430 A2s
TVJ = T

VJM

t = 10 ms (50 Hz), sine 340 A2s

VR = 0 t = 8.3 ms (60 Hz), sine 330 A2s

T

VJ

-40...+150 °C

T

VJM

150 °C

T

stg

-40...+125 °C

V

ISOL

50/60 Hz, RMS I

ISOL

£ 1 mA 2500 V~

M

d

Mounting torque (M4) 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.

Weight typ. 30 g

V

RSM

V

RRM

Standard

V V Types

900 800 VBO 40-08NO6
1300 1200 VBO 40-12NO6
1700 1600 VBO 40-16NO6

I

dA V

= 40 A

V

RRM

= 800-1600 V

Features

●

Isolation voltage 2500 V~

●

Planar passivated chips

●

Low forward voltage drop

Applications

●

Supplies for DC power equipment

●

Input rectifiers for PWM inverter

●

Battery DC power supplies

●

Field supply for DC motors

Advantages

●

Easy to mount

●

Space and weight savings

Data according to IEC 60747 and refer to a single diode unless otherwise stated

① for resistive load at bridge output

Symbol Test Conditions Characteristic Values
I

R

VR= V

RRM

;T

VJ

= 25°C £ 0.3 mA

VR= V

RRM

;T

VJ

= T

VJM

£ 5mA

V

F

IF= 20 A; TVJ = 25°C £ 1.15 V

V

T0

For power-loss calculations only 0.80 V

r

T

TVJ = T

VJM

13 mW

R

thJC

per diode; DC current 1.7 K/W
per module 0.42 K/W

R

thCH

per diode, DC current typ. 0.3 K/W
per module typ. 0.08 K/W

d

S

Creeping distance on surface 8 mm

d

A

Creepage distance in air ③ 4mm

a Max. allowable acceleration 50 m/s

2

VBO 40

Single Phase
Rectifier Bridge

008

+

–

~
~

~

~

–

+

miniBLOC, SOT-227 B

E72873

M4 screws (4x)
supplied

Dim. Millimeter Inches

Min. Max. Min. Max.

A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323

C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169

E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595

G 30.12 30.30 1.186 1.193
H 37.80 38.30 1.489 1.509

J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378

L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506

N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084

P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059

R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191

T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004

V 3.30 4.57 0.130 0.180
W 0.780 0.830 19.81 21.08

© 2000 IXYS All rights reserved

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0.001 0.01 0.1 1

0

50

100

150

200

250

23456789110

10

1

10

2

10

3

0.00.51.01.52.0

0

10

20

30

40

50

60

70

80

0 102030405060

0

40

80

120

160

200

0 20 40 60 80 100 120 140

0.001 0.01 0.1 1 10

0.0

0.4

0.8

1.2

1.6

2.0

I2t

I

FSM

I

F

A

V

F

t

s

t

ms

P

tot

W

I

d(AV)M

A

T

amb

t

s

K/W

A

2

s

0 20 40 60 80 100 120 140

0

10

20

30

40

50

I

d(AV)M

T

C

A

V

A

°C °C

VBO 40

T

VJ

= 45°C

50Hz, 80% V

RRM

VR = 0 V

Fig. 1 Forward current versus voltage

drop per diode

Fig. 2 Surge overload current Fig. 3 I2t versus time per diode

Fig. 4 Power dissipation versus direct output current and ambient temperature

Fig. 5 Max. forward current versus case

temperature

Fig. 6 Transient thermal impedance junction to case

R

thHA

:

0.1 K/W

0.5 K/W

1.0 K/W

2.0 K/W

4.0 K/W

7.0 K/W

T

VJ

= 150°C

T

VJ

= 45°C

TVJ=125°C
TVJ= 25°C

T

VJ

= 150°C

Z

thJC

Constants for Z

thJC

calculation:

iR

thi

(K/W) ti (s)

1 0.081 0.00024
2 0.1449 0.0036
3 0.2982 0.0235
4 0.735 0.142
5 0.441 0.7

VBO 40