© 2000 IXYS All rights reserved
1 - 1
V
RSM
V
RRM
Type
VV
1200 1200 VBO 36-12NO8
1400 1400 VBO 36-14NO8
1600 1600 VBO 36-16NO8
1800 1800 VBO 36-18NO8
Symbol Test Conditions Maximum Ratings
I
dAV
TC = 85°C, module 23 A
I
dAVM
TC = 62°C, module 30 A
I
FSM
TVJ = 45°C; t = 10 ms (50 Hz), sine 550 A
VR = 0 t = 8.3 ms (60 Hz), sine 600 A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 500 A
VR = 0 t = 8.3 ms (60 Hz), sine 550 A
I
2
t TVJ = 45°C t = 10 ms (50 Hz), sine 1520 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 1520 A2s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 1250 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 1250 A2s
T
VJ
-40...+150 °C
T
VJM
150 °C
T
stg
-40...+150 °C
V
ISOL
50/60 Hz, RMS t = 1 min 2500 V~
I
ISOL
£ 1 mA t = 1 s 3000 V~
M
d
Mounting torque (M5) 2 ± 10 % Nm
(10-32 UNF) 18 ± 10 % lb.in.
Weight typ. 22 g
I
dA VM
= 30 A
V
RRM
= 1200-1800 V
Features
●
Package with ¼" fast-on terminals
●
Isolation voltage 3000 V~
●
Planar passivated chips
●
Blocking voltage up to 1800 V
●
Low forward voltage drop
●
UL registered E 72873
Applications
●
Supplies for DC power equipment
●
Input rectifiers for PWM inverter
●
Battery DC power supplies
●
Field supply for DC motors
Advantages
●
Easy to mount with one screw
●
Space and weight savings
●
Improved temperature and power
cycling
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol Test Conditions Characteristic Values
I
R
TVJ = 25°C; VR = V
RRM
£ 0.3 mA
T
VJ
= T
VJM
;V
R
= V
RRM
£ 2.0 mA
V
F
IF = 150 A; TVJ = 25°C £ 1.7 V
V
T0
For power-loss calculations only 0.8 V
r
T
5.8 mW
R
thJC
per diode; DC current 6.2 K/W
per module 1.55 K/W
R
thJK
per diode; DC current 7.4 K/W
per module 1.85 K/W
d
S
Creeping distance on surface 12.7 mm
d
A
Creepage distance in air 9.4 mm
a Max. allowable acceleration 50 m/s
2
Dimensions in mm (1 mm = 0.0394")
VBO 36
Single Phase
Rectifier Bridge
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+
–
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