IXYS VBO13-12AO2, VBO13-08NO2, VBO13-16NO2, VBO13-16AO2, VBO13-12NO2 Datasheet

VBO 13
Single Phase Rectifier Bridge
Standard and Avalanche Types
V
RSMVBRmin
V V V Types Types
900 800 VBO 13-08NO2 1300 1230 1200 VBO 13-12NO2 VBO 13-12AO2 1700 1630 1600 VBO 13-16NO2 VBO 13-16AO2
For Avalanche Types only
Symbol Test Conditions Maximum Ratings I
dAV
I
dAVM
P
RSM
I
FSM
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 240 A2s
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight typ. 15 g
V
RRM
~ ~
TC = 85°C, module 18 A
module 30 A TVJ= T
VJM
t = 10 ms 2.5 kW
TVJ = 45°C; t = 10 ms (50 Hz), sine 220 A VR = 0 t = 8.3 ms (60 Hz), sine 230 A
T
= T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 190 A
t = 10 ms (50 Hz), sine 180 A
VR = 0 t = 8.3 ms (60 Hz), sine 220 A2s TVJ = T
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 150 A2s
t = 10 ms (50 Hz), sine 160 A2s
-40...+150 °C 150 °C
-40...+125 °C
50/60 Hz, RMS t = 1 min 3000 V~ I
£ 1 mA t = 1 s 3600 V~
ISOL
Mounting torque (M5) 1.5-2 Nm
(10-32 UNF) 13-18 lb.in.
I
dA V
V
+
= 18 A = 800-1600 V
RRM
~
+
Features
Avalanche rated parts available
Package with DCB ceramic base plate
Isolation voltage 3600 V~
Planar passivated chips
Low forward voltage drop
¼" fast-on terminals
UL registered E 72873
Applications
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Advantages
Easy to mount with one screw
Space and weight savings
Improved temperature and power cycling
~
Symbol Test Conditions Characteristic Values I
R
V
F
V
T0
r
T
R
thJC
R
thJK
d
S
d
A
a Max. allowable acceleration 50 m/s
Data according to IEC 60747 and refer to a single diode unless otherwise stated for resistive load at bridge output, with isolated fast-on tabs IXYS reserves the right to change limits, test conditions and dimensions.
VR= V VR= V
IF= 55 A; TVJ = 25°C £ 1.8 V For power-loss calculations only 0.85 V
TVJ = T per diode; DC current 5.6 K/W
per module 1.4 K/W per diode, DC current 6.0 K/W per module 1.5 K/W
Creeping distance on surface 13 mm Creepage distance in air 9.5 mm
;T
RRM
;T
RRM
VJM
= 25°C £ 0.3 mA
VJ VJ
= T
VJM
£ 5mA
17 mW
© 2000 IXYS All rights reserved
Dimensions in mm (1 mm = 0.0394")
2
1 - 2
Fig. 1 Surge overload current per diode
I
: Crest value, t: duration
FSM
Fig. 2 I
2
t versus time (1-10 ms)
per diode
VBO 13
Fig. 3 Max. forward current at case
temperature
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 5 Transient thermal impedance junction to heatsink per diode © 2000 IXYS All rights reserved
Constants for Z
iR
calculation:
thJK
(K/W) ti (s)
thi
1 0.059 0.00217 2 2.714 0.159 3 3.227 2.34
2 - 2
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