IXYS MWI100-12E8 Datasheet
Advanced Technical Information
MWI 100-12 E8
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
13, 21
1
2
3
4
14, 20
5
6
7
8
IGBTs
Symbol Conditions Maximum Ratings
V
CES
V
GES
I
C25
I
C80
RBSOA VGE = ±15 V; RG = 10 Ω; TVJ = 125°C I
t
SC
(SCSOA) non-repetitive
TVJ = 25°C to 150°C 1200 V
TC = 25°C 165 A
TC = 80°C 115 A
Clamped inductive load; L = 100 µH V
V
= 900 V; VGE = ±15 V; RG = 10 Ω; TVJ = 125°C 10 µs
CE
CM
CEK
9
10
11
12
±
20 V
= 200 A
≤ V
CES
I
C25
V
CES
V
CE(sat) typ.
19
17
15
= 165 A
= 1200 V
= 2.0 V
Features
• IGBTs
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current for optimized
performance also in resonant circuits
• HiPerFRED
TM
diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
B3
P
tot
TC = 25°C 640 W
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
V
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
E
C
Q
R
CE(sat)
GE(th)
on
off
ies
Gon
thJC
VJ
IC = 100 A; VGE = 15 V; TVJ = 25°C 2.0 2.5 V
TVJ = 125°C 2.2 V
IC = 4 mA; VGE = V
V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C 1.4 mA
TVJ = 125°C 1.4 mA
VCE = 0 V; VGE = ± 20 V 400 nA
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 100 A
VGE = ±15 V; RG = 10 Ω
VCE = 25 V; VGE = 0 V; f = 1 MHz 7.4 nF
V
= 600V; VGE = 15 V; IC = 100 A 1 µC
CE
(per IGBT) 0.19 K/W
min. typ. max.
4.5 6.5 V
150 ns
60 ns
680 ns
50 ns
12 mJ
10 mJ
Typical Applications
• AC drives
• power supplies with power factor
correction
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
142
1 - 2
MWI 100-12 E8
Diodes
Symbol Conditions Maximum Ratings
I
F25
I
F80
TC = 25°C 200 A
TC = 80°C 130 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
RM
t
rr
R
thJC
IF = 100 A; VGE = 0 V; TVJ = 25°C 2.2 2.5 V
TVJ = 125°C 1.6 V
IF = 120 A; diF/dt = -750 A/µs; TVJ = 125°C 82 A
VR = 600 V; VGE = 0 V 200 ns
(per diode) 0.3 K/W
Module
Symbol Conditions Maximum Ratings
T
VJ
T
stg
V
ISOL
M
d
I
≤ 1 mA; 50/60 Hz 2500 V~
ISOL
Mounting torque (M5) 3 - 6 Nm
-40...+150 °C
-40...+125 °C
Dimensions in mm (1 mm = 0.0394")
B3
Higher magnification on page B3 - 72
Symbol Conditions Characteristic Values
min. typ. max.
R
pin-chip
d
S
d
A
R
thCH
Creepage distance on surface 10 mm
Strike distance in air 10 mm
with heatsink compound 0.01 K/W
1.8 mΩ
Weight 300 g
© 2001 IXYS All rights reserved
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