IXYS MWI100-12A8 Datasheet
Advanced Technical Information
MWI 100-12 A8
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
13, 21
1
2
3
4
14, 20
5
6
7
8
IGBTs
Symbol Conditions Maximum Ratings
V
CES
V
GES
I
C25 TC
I
C80 TC
TVJ = 25°C to 150°C 1200 V
= 25°C 160 A
= 80°C 110 A
RBSOA VGE = ±15 V; RG = 6.8 W; TVJ = 125°C I
Clamped inductive load; L = 100 µH V
t
SC
(SCSOA) non-repetitive
P
tot TC
V
= V
CE
; VGE = ±15 V; RG = 6.8 W; TVJ = 125°C 10 µs
CES
= 25°C 640 W
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
VJ
V
V
I
CES
CE(sat)
GE(th)
IC = 100 A; VGE = 15 V; TVJ = 25°C 2.2 2.6 V
TVJ = 125°C 2.5 V
IC = 4 mA; VGE = V
V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C 6.3 mA
TVJ = 125°C 4 mA
9
10
19
17
15
11
12
±
20 V
= 200 A
CM
£ V
CEK
CES
min. typ. max.
4.5 6.5 V
I
C25
V
CES
V
CE(sat) typ.
= 160 A
= 1200 V
= 2.2 V
Features
●
NPT IGBT technology
●
low saturation voltage
●
low switching losses
●
switching frequency up to 30 kHz
●
square RBSOA, no latch up
●
high short circuit capability
●
positive temperature coefficient for
easy parallelling
●
MOS input, voltage controlled
●
ultra fast free wheeling diodes
●
solderable pins for PCB mounting
●
package with copper base plate
Advantages
●
space savings
●
reduced protection circuits
●
package designed for wave soldering
Typical Applications
●
AC motor control
●
AC servo and robot drives
●
power supplies
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS reserves the right to change limits, test conditions and dimensions.
VCE = 0 V; VGE = ± 20 V 400 nA
100 ns
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 100 A
VGE = ±15 V; RG = 6.8 W
60 ns
600 ns
90 ns
16.1 mJ
14.6 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz 6.5 nF
V
= 600V; VGE = 15 V; IC = 100 A 475 nC
CE
(per IGBT) 0.19 K/W
© 2001 IXYS All rights reserved
147
1 - 2
MWI 100-12 A8
Diodes
Symbol Conditions Maximum Ratings
I
F25
I
F80
TC = 25°C 200 A
TC = 80°C 130 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
RM
t
rr
R
thJC
IF = 100 A; VGE = 0 V; TVJ = 25°C 2.2 2.5 V
TVJ = 125°C 1.6 V
IF = 120 A; diF/dt = -750 A/µs; TVJ = 125°C 82 A
VR = 600 V; VGE = 0 V 200 ns
(per diode) 0.3 K/W
Module
Symbol Conditions Maximum Ratings
T
VJ
T
stg
V
ISOL
M
d
I
£ 1 mA; 50/60 Hz 2500 V~
ISOL
Mounting torque (M5) 3 - 6 Nm
-40...+150 °C
-40...+125 °C
Dimensions in mm (1 mm = 0.0394")
Higher magnification see outlines.pdf
Symbol Conditions Characteristic Values
min. typ. max.
R
d
d
R
pin-chip
S
A
thCH
Creepage distance on surface 10 mm
Strike distance in air 10 mm
with heatsink compound 0.01 K/W
1.8 mW
Weight 300 g
© 2000 IXYS All rights reserved
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