IXYS MWI100-06A8 Datasheet
© 2000 IXYS All rights reserved
1 - 2
MWI 100-06 A8
IXYS reserves the right to change limits, test conditions and dimensions.
035
IXYS reserves the right to change limits, test conditions and dimensions.
Features
●
NPT IGBT technology
●
low saturation voltage
●
low switching losses
●
switching frequency up to 30 kHz
●
square RBSOA, no latch up
●
high short circuit capability
●
positive temperature coefficient for
easy parallelling
●
MOS input, voltage controlled
●
ultra fast free wheeling diodes
●
solderable pins for PCB mounting
●
package with copper base plate
Advantages
●
space savings
●
reduced protection circuits
●
package designed for wave soldering
Typical Applications
●
AC motor control
●
AC servo and robot drives
●
power supplies
IGBTs
Symbol Conditions Maximum Ratings
V
CES
TVJ = 25°C to 150°C 600 V
V
GES
±
20 V
I
C25
TC = 25°C 130 A
I
C80
TC = 80°C 88 A
RBSOA VGE = ±15 V; RG = 2.2 W; TVJ = 125°C I
CM
= 200 A
Clamped inductive load; L = 100 µH V
CEK
£ V
CES
t
SC
V
CE
= V
CES
; VGE = ±15 V; RG = 2.2 W; TVJ = 125°C 10 µs
(SCSOA) non-repetitive
P
tot
TC = 25°C 410 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
IC = 100 A; VGE = 15 V; TVJ = 25°C 2.0 2.5 V
TVJ = 125°C 2.3 V
V
GE(th)
IC = 1.5 mA; VGE = V
CE
4.5 6.5 V
I
CES
V
CE
= V
CES; VGE
= 0 V; TVJ = 25°C 1.2 mA
TVJ = 125°C 0.9 mA
I
GES
VCE = 0 V; VGE = ± 20 V 400 nA
t
d(on)
25 ns
t
r
11 ns
t
d(off)
150 ns
t
f
30 ns
E
on
1.0 mJ
E
off
2.9 mJ
C
ies
VCE = 25 V; VGE = 0 V; f = 1 MHz 4.3 nF
Q
Gon
V
CE
= 300V; VGE = 15 V; IC = 100 A tbd nC
R
thJC
(per IGBT) 0.3 K/W
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 100 A
VGE = ±15 V; RG = 2.2 W
I
C25
= 130 A
V
CES
= 600 V
V
CE(sat) typ.
= 2.0 V
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
13, 21
14, 20
1
2
3
4
7
8
9
10
11
12
5
6
17
19
15
Advanced Technical Information
© 2000 IXYS All rights reserved
2 - 2
MWI 100-06 A8
Diodes
Symbol Conditions Maximum Ratings
I
F25
TC = 25°C 140 A
I
F80
TC = 80°C 88 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
IF = 100 A; VGE = 0 V; TVJ = 25°C 1.9 2.1 V
TVJ = 125°C 1.4 V
I
RM
IF = 60 A; diF/dt = -500 A/µs; TVJ = 125°C 28 A
t
rr
VR = 300 V; VGE = 0 V 100 ns
R
thJC
(per diode) 0.61 K/W
Module
Symbol Conditions Maximum Ratings
T
VJ
-40...+150 °C
T
stg
-40...+125 °C
V
ISOL
I
ISOL
£ 1 mA; 50/60 Hz 2500 V~
M
d
Mounting torque (M5) 3 - 6 Nm
Symbol Conditions Characteristic Values
min. typ. max.
R
pin-chip
1.8 mW
d
S
Creepage distance on surface 10 mm
d
A
Strike distance in air 10 mm
R
thCH
with heatsink compound 0.01 K/W
Weight 300 g
Dimensions in mm (1 mm = 0.0394")
Higher magnification see outlines.pdf
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