Page 1
Converter - Brake - Inverter Module (CBI3)
22
21
MUBW 50-12 E8
T1
T2
D1
6
D2
D11 D13 D15
23
1
D12
D14
D16
23
14
7
D7
16
15
T7
11
10
24
Three Phase Brake Chopper Three Phase
Rectifier Inverter
V
I
FAVM
I
FSM
RRM
= 1600 V V
= 70 A I
= 700 A V
= 1200 V V
CES
= 52 A I
C25
= 2.2 V V
CE(sat)
CES
C25
CE(sat)
= 1200 V
= 90 A
= 1.9 V
T3
D3
D4
20
19
5
18
17
T4
12 13
NTC
T5
T6
D5
4
D6
See outline drawing for pin arrangement
E72873
8
9
Input Rectifier Bridge D11 - D16
Symbol Conditions Maximum Ratings
V
I
FAV
I
DAVM
I
FSM
P
RRM
tot
TC = 80°C; sine 180° 50 A
TC = 80°C; rectangular; d = 1/3; bridge 140 A
TVJ = 25°C; t = 10 ms; sine 50 Hz 700 A
TC = 25°C 135 W
1600 V
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
I
R
VJ
F
R
thJC
IF = 50 A; TVJ = 25°C 1.1 1.3 V
TVJ = 125°C 1.1 V
VR = V
TVJ = 25°C 0.05 mA
RRM;
TVJ = 125°C 0.8 mA
(per diode) 0.94 K/W
min. typ. max.
Application: AC motor drives with
• Input from single or three phase grid
• Three phase synchronous or
asynchronous motor
• electric braking operation
Features
• High level of integration - only one
power semiconductor module
required for the whole drive
• IGBT technology with low saturation
voltage, low switching losses and tail
current, high RBSOA and short circuit
ruggedness
• Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
• Industry standard package with
insulated copper base plate and
soldering pins for PCB mounting
• Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
20070912a
1 - 8© 2007 IXYS All rights reserved
Page 2
MUBW 50-12 E8
Output Inverter T1 - T6
Symbol Conditions Maximum Ratings
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA) non-repetitive
P
tot
TVJ = 25°C to 150°C 1200 V
Continuous
±
20 V
TC = 25°C 90 A
TC = 80°C 62 A
VGE = ±15 V; RG = 22 Ω; TVJ = 125°C 100 A
RBSOA; Clamped inductive load; L = 100 µH V
V
= 900 V; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C 10 µs
CE
CES
TC = 25°C 350 W
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
V
I
CES
CE(sat)
GE(th)
VJ
IC = 50 A; VGE = 15 V; TVJ = 25°C 1.9 2.4 V
TVJ = 125°C 2.1 V
IC = 2 mA; VGE = V
V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C 0.8 mA
TVJ = 125°C 0.8 mA
min. typ. max.
4.5 6.5 V
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
T1-T6
V0 = 0.98 V; R0 = 23.2 m
T7
V0 = 0.95 V; R0 = 45 m
Diode (typ. at TJ = 125°C)
D1-D6
V0 = 1.27 V; R0 = 5.8 m
D7
V0 = 1.25 V; R0 = 31.2 m
D11-D16
V0 = 0.83 V; R0 = 5.5 m
Thermal Response
Ω
Ω
Ω
Ω
Ω
I
t
t
t
t
E
E
C
Q
R
GES
d(on)
r
d(off)
f
on
off
ies
Gon
thJC
VCE = 0 V; VGE = ± 20 V 200 nA
80 ns
Inductive load, T
= 125°C
VJ
VCE = 600 V; IC = 50 A
VGE = ±15 V; RG = 22 Ω
50 ns
680 ns
30 ns
6mJ
4mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz 3.8 nF
VCE= 600 V; VGE = 15 V; IC = 50 A 350 nC
(per IGBT) 0.35 K/W
Output Inverter D1 - D6
Symbol Conditions Maximum Ratings
I
F25
I
F80
TC = 25°C 110 A
TC = 80°C 70 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
IF = 50 A; VGE = 0 V; TVJ = 25°C 2.1 2.5 V
TVJ = 125°C 1.5 V
IGBT (typ.)
T1-T6
C
= 0.206 J/K; R
th1
C
= 1.307 J/K; R
th2
T7
C
= 0.128 J/K; R
th1
C
= 0.961 J/K; R
th2
Diode (typ.)
D1-D6
C
= 0.138 J/K; R
th1
C
= 0.957 J/K; R
th2
D7
C
= 0.038 J/K; R
th1
C
= 0.435 J/K; R
th2
D11-D16
C
= 0.086 J/K; R
th1
C
= 0.621 J/K; R
th2
= 0.262 K/W
th1
= 0.088 K/W
th2
= 0.421 K/W
th1
= 0.129 K/W
th2
= 0.48 K/W
th1
= 0.13 K/W
th2
= 1.74 K/W
th1
= 0.36 K/W
th2
= 0.738 K/W
th1
= 0.202 K/W
th2
I
RM
t
rr
R
thJC
IF = 60 A; diF/dt = -500 A/µs; TVJ = 125°C 41 A
VR = 600 V; VGE = 0 V 200 ns
(per diode) 0.61 K/W
20070912a
2 - 8© 2007 IXYS All rights reserved
Page 3
Brake Chopper T7
Symbol Conditions Maximum Ratings
MUBW 50-12 E8
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA) non-repetitive
P
tot
TVJ = 25°C to 150°C 1200 V
Continuous
±
20 V
TC = 25°C 52 A
TC = 80°C 35 A
VGE = ±15 V; RG = 39 Ω; TVJ = 125°C 50 A
RBSOA; Clamped inductive load; L = 100 µH
V
= 900 V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C 10 µs
CE
V
CES
TC = 25°C 225 W
Symbol Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
V
V
I
I
t
t
t
t
E
C
Q
R
CES
GES
d(on)
r
d(off)
f
CE(sat)
GE(th)
off
ies
Gon
thJC
VJ
IC = 35 A; VGE = 15 V; TVJ = 25°C 2.2 2.8 V
TVJ = 125°C 2.5 V
IC = 1 mA; VGE = V
V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C 0.1 mA
TVJ = 125°C 0.1 mA
VCE = 0 V; VGE = ± 20 V 200 nA
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 35 A
VGE = ±15 V; RG = 39 Ω
VCE = 25 V; VGE = 0 V; f = 1 MH z 2 nF
VCE= 600 V; VGE = 15 V; IC = 35 A 150 nC
min. typ. max.
4.5 6.5 V
85 ns
50 ns
440 ns
50 ns
2.6 mJ
0.55 K/W
Brake Chopper D7
Symbol Conditions Maximum Ratings
V
RRM
I
F25
I
F80
TVJ = 25°C to 150°C 1200 V
TC = 25°C 25 A
TC = 80°C 16 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
R
I
RM
t
rr
R
thJC
IF = 35 A; TVJ = 25°C 3.0 3.4 V
TVJ = 125°C 2.3 V
VR = V
TVJ = 25°C 0.1 mA
RRM;
TVJ = 125°C 0.1 mA
IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C 16 A
VR = 600 V 130 ns
2.1 K/W
20070912a
3 - 8© 2007 IXYS All rights reserved
Page 4
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
MUBW 50-12 E8
R
25
B
25/50
T = 25°C 4.75 5.0 5.25 kΩ
3375 K
Module
Symbol Conditions Maximum Ratings
T
VJ
T
JM
T
stg
V
ISOL
M
d
operating -40...+125 °C
150 °C
-40...+125 °C
I
≤ 1 mA; 50/60 Hz 2500 V~
ISOL
Mounting torque (M5) 3 - 6 Nm
Symbol Conditions Characteristic Values
min. typ. max.
R
pin-chip
d
S
d
A
R
thCH
Creepage distance on surface 6 mm
Strike distance in air 6 mm
with heatsink compound 0.01 K/W
5mΩ
Weight 300 g
Dimensions in mm (1 mm = 0.0394")
20070912a
4 - 8© 2007 IXYS All rights reserved
Page 5
Input Rectifier Bridge D11 - D16
MUBW 50-12 E8
120
A
100
I
F
T
VJ
T
VJ
= 125°C
= 25°C
80
60
40
20
0
0.0 0.5 1.0 1.5 2.0 2.5
V
V
F
Fig. 1 Forward current versus voltage
drop per diode
450
400
W
350
300
P
tot
250
200
150
100
50
4
10
2
s
A
I2t
I
FSM
500
400
T
= 45°C
A
VJ
300
= 45°C
T
VJ
3
10
200
T
VJ
= 150°C
TVJ= 150°C
100
50Hz, 80% V
0
0.001 0.01 0.1 1
RRM
2
s
10
23456789110
t
Fig. 2 Surge overload current Fig. 3 I2t versus time per diode
160
A
140
I
d(AV)
R
:
thA
0.05 K/W
0.15 K/W
0.3 K/W
0.5 K/W
1 K/W
2 K/W
5 K/W
120
100
80
60
40
20
ms
t
0
0 20406080100120140160180
I
d(AV)M
A
0 20406080100120140
T
amb
CC
Fig. 4 Power dissipation versus direct output current and ambient temperature, sin 180°
1
K/W
0.1
Z
thJC
0.01
0.001
0.001 0.01 0.1 1
Fig. 6 Transient thermal impedance junction to case
s
t
0
0 20406080100120140
T
C
Fig. 5 Max. forward current versus
case temperature
20070912a
5 - 8© 2007 IXYS All rights reserved
Page 6
Output Inverter T1 - T6 / D1 - D6
MUBW 50-12 E8
120
A
V
GE
= 17 V
15 V
13 V
100
I
C
80
60
40
20
TVJ = 25°C
0
01234
V
CE
V
11 V
9 V
120
A
V
100
I
C
80
60
40
20
0
01234
Fig. 7 Typ. output characteristics Fig. 8 Typ. output characteristics
I
F
160
120
A
TVJ = 125°C
160
VCE = 20 V
A
120
I
C
= 17 V
GE
TVJ = 125°C
15 V
13 V
11 V
9 V
V
V
CE
80
40
TVJ = 125°C
TVJ = 25°C
0
4 6 8 101214
V
GE
V
80
40
0
0123
V
F
Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics of
free wheeling diode
20
V
15
V
GE
10
5
0
0 100 200 300 400 500
VCE = 600 V
I
= 50 A
C
nC
Q
G
100
t
rr
A
80
I
RM
60
40
20
I
RM
0
0 200 400 600 800 1000
-di/dt
TVJ = 25°C
V
TVJ = 125°C
V
= 600 V
R
I
= 60 A
F
MUBW5012E8
A/μs
300
ns
240
180
120
60
0
t
rr
Fig. 11 Typ. turn on gate charge Fig. 12 Typ. turn off characteristics of
free wheeling diode
20070912a
6 - 8© 2007 IXYS All rights reserved
Page 7
Output Inverter T1 - T6 / D1 - D6
MUBW 50-12 E8
t
d(off)
t
f
800
ns
600
t
400
200
0
A
20
t
mJ
16
E
on
12
8
4
E
on
VCE = 600 V
= ±15 V
V
GE
= 22 Ω
R
G
= 125°C
T
VJ
0
0 20406080100120
I
C
d(on)
t
r
100
ns
90
80
70
60
50
40
30
20
t
8
mJ
6
E
off
4
2
E
off
VCE = 600 V
V
= ±15 V
GE
R
= 22 Ω
G
T
= 125°C
VJ
10
0
A
0
20 40 60 80 100
I
C
Fig. 13 Typ. turn on energy and switching Fig. 14 Typ. turn off energy and switching
times versus collector current times versus collector current
t
d(on)
r
300
ns
250
t
200
150
100
50
0
Ω
15.0
V
mJ
12.5
E
on
10.0
= 600 V
CE
= ±15 V
V
GE
I
= 50 A
C
= 125°C
T
VJ
7.5
E
5.0
on
t
2.5
0.0
0 20406080100120
R
G
12
V
= 600 V
CE
mJ
V
= ±15 V
GE
10
= 50 A
I
E
off
C
T
= 125°C
VJ
8
6
4
E
off
2
0
0 20406080100120
R
G
t
t
d(off)
f
1200
ns
1000
t
800
600
400
200
0
Ω
Fig. 15 Typ. turn on energy and switching Fig.16 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
120
A
100
I
CM
80
60
40
RG = 22 Ω
20
= 125°C
T
VJ
0
0 200 400 600 800 1000 1200 1400
V
V
CE
1
diode
K/W
0.1
Z
thJC
0.01
single pulse
0.001
0.0001
0.000010.0001 0.001 0.01 0.1 1 10
Fig. 17 Reverse biased safe operating area Fig. 18 Typ. transient thermal impedance
RBSOA
IGBT
MUBW5012E8
s
t
20070912a
7 - 8© 2007 IXYS All rights reserved
Page 8
Brake Chopper T7 / D7
MUBW 50-12 E8
80
TVJ = 25°C
A
60
I
C
TVJ = 125°C
40
120
A
100
I
F
TVJ = 125°C
80
60
40
20
VGE = 15 V
0
012345
V
CE
V
20
0
012345
TVJ = 25°C
V
F
V
Fig. 19 Typ. output characteristics Fig. 20 Typ. forward characteristics of
free wheeling diode
t
d(off)
1200
ns
1000
800
600
4
VCE = 600 V
V
3
= ±15 V
GE
I
= 35 A
C
T
= 125°C
VJ
E
off
mJ
E
t
off
2
t
d(off)
800
ns
600
400
400
1
200
200
t
t
f
0
A
0
10 20 30 40 50 60 70 80
R
G
f
0
Ω
6
VCE = 600 V
V
= ±15 V
GE
mJ
= 39 Ω
E
off
R
G
T
= 125°C
VJ
4
2
E
off
0
020406080
I
C
Fig. 21 Typ. turn off energy and switching Fig. 22 Typ. turn off energy and switching
times versus collector current times versus gate resistor
10
K/W
diode
Temperature Sensor NTC
1
Z
thJC
IGBT
0.1
10000
Ω
R
0.01
1000
0.001
single pulse
0.0001
0.00001 0.0001 0.001 0.01 0.1 1 10
s
100
0 25 50 75 100 125 150
t
Fig. 23 Typ. transient thermal impedance Fig. 24 Typ. thermistorresistance versus
temperature
MUBW5012E8
C
T
20070912a
8 - 8© 2007 IXYS All rights reserved
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