IXYS MUBW50-12A8 Datasheet
Advanced Technical Information
Converter - Brake - Inverter Module (CBI3)
22
21
MUBW 50-12 A8
T1
T2
D1
6
D2
D11 D13 D15
23
1
D12
D14
D16
23
14
7
D7
16
15
T7
11
10
24
Three Phase Brake Chopper Three Phase
Rectifier Inverter
V
I
FAVM
I
FSM
RRM
= 1600 V V
= 70 A I
= 700 A V
= 1200 V V
CES
= 50 A I
C25
= 2.5 V V
CE(sat)
CES
C25
CE(sat)
= 1200 V
= 85 A
= 2.2 V
T3
D3
D4
20
19
5
18
17
T4
12 13
NTC
T5
T6
D5
4
D6
8
B4
9
Input Rectifier D11 - D16
Symbol Conditions Maximum Ratings
V
I
FAV
I
DAVM
I
FSM
P
RRM
tot
TC = 80°C; sine 180° 50 A
TC = 80°C; rectangular; d = 1/3; bridge 140 A
TVJ = 25°C; t = 10 ms; sine 50 Hz 700 A
TC = 25°C 135 W
1600 V
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
I
R
VJ
F
R
thJC
IF = 50 A; TVJ = 25°C 1.1 1.3 V
TVJ = 125°C 1.1 V
VR = V
TVJ = 25°C 0.05 mA
RRM;
TVJ = 125°C 0.8 mA
(per diode) 0.94 K/W
min. typ. max.
Application: A C motor drives with
●
Input from single or three phase grid
●
Three phase synchronous or
asynchronous motor
●
electric braking operation
Features
●
High level of integration - only one power
semiconductor module required for the
whole drive
●
NPT IGBT technology with low
saturation voltage, low switching
losses, high RBSOA and short circuit
ruggedness
●
Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
●
Industry standard package with insulated
copper base plate and soldering pins for
PCB mounting
●
Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
Revision B 12.11.2001
147
1 - 4
Output Inverter T1 - T6
Symbol Conditions Maximum Ratings
MUBW 50-12 A8
V
CES
V
GES
I
C25 TC
I
C80 TC
RBSOA VGE = ±15 V; RG = 22 Ω; TVJ = 125°C I
t
SC
(SCSOA) non-repetitive
P
tot TC
TVJ = 25°C to 150°C 1200 V
Continuous
±
20 V
= 25°C 85 A
= 80°C 60 A
= 100 A
Clamped inductive load; L = 100 µH V
V
= V
CE
; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C 10 µs
CES
CM
CEK
≤ V
CES
= 25°C 350 W
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
VJ
IC = 50 A; VGE = 15 V; TVJ = 25°C 2.2 2.6 V
TVJ = 125°C 2.5 V
IC = 2 mA; VGE = V
V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C 3.7 mA
TVJ = 125°C 3.1 mA
VCE = 0 V; VGE = ± 20 V 200 nA
Inductive load, T
= 125°C
VJ
VCE = 600 V; IC = 50 A
VGE = ±15 V; RG = 22 Ω
VCE = 25 V; VGE = 0 V; f = 1 MHz 3.3 nF
VCE= 600 V; VGE = 15 V; IC = 50 A 230 nC
(per IGBT) 0.35 K/W
min. typ. max.
4.5 6.5 V
100 ns
70 ns
500 ns
70 ns
7.6 mJ
5.6 mJ
B4
Output Inverter D1 - D6
Symbol Conditions Maximum Ratings
I
F25
I
F80
TC = 25°C 110 A
TC = 80°C 70 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
RM
t
rr
R
thJC
IF = 50 A; VGE = 0 V; TVJ = 25°C 2.1 2.5 V
TVJ = 125°C 1.5 V
IF = 60 A; diF/dt = -500 A/µs; TVJ = 125°C 41 A
VR = 600 V; VGE = 0 V 200 ns
(per diode) 0.61 K/W
© 2001 IXYS All rights reserved
2 - 4
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