IXYS MUBW50-06A8 Data Sheet

Converter - Brake - Inverter Module (CBI3)

22

21

MUBW 50-06 A8

T1

T2

D1

6

D2

D11 D13 D15

23

1

D12

D14

D16

23

14

7

D7

16
15

T7

11
10

24

Three Phase Brake Chopper Three Phase
Rectifier Inverter

V
I

FAVM

I

FSM

RRM

= 1600 V V
= 60 A I
= 500 A V

= 600 V V

CES

= 35 A I

C25

= 2.1 V V

CE(sat)

CES

C25

CE(sat)

= 600 V
= 75 A
= 1.9 V

T3

D3

D4

20
19

5

18
17

T4

12 13

NTC

T5

T6

D5

4

D6

See outline drawing for pin arrangement

E72873

8

9

Input Rectifier D11 - D16

Symbol Conditions Maximum Ratings

V

I

FAV

I

DAVM

I

FSM

P

RRM

tot

TC = 80°C; sine 180° 42 A
TC = 80°C; rectangular; d = 1/3; bridge 120 A
TVJ = 25°C; t = 10 ms; sine 50 Hz 500 A

TC = 25°C 120 W

1600 V

Symbol Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

V

I

R

VJ

F

R

thJC

IF = 50 A; TVJ = 25°C 1.2 1.4 V

TVJ = 125°C 1.2 V

VR = V

TVJ = 25°C 0.02 mA

RRM;

TVJ = 125°C 0.6 mA

(per diode) 1.06 K/W

min. typ. max.

Application: AC motor drives with

●

Input from single or three phase grid

●

Three phase synchronous or
asynchronous motor

●

electric braking operation

Features

●

High level of integration - only one power
semiconductor module required for the
whole drive

●

NPT IGBT technology with low
saturation voltage, low switching
losses, high RBSOA and short circuit
ruggedness

●

Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery

●

Industry standard package with insulated
copper base plate and soldering pins for
PCB mounting

●

Temperature sense included

IXYS reserves the right to change limits, test conditions and dimensions.

© 2007 IXYS All rights reserved

20070921a

1 - 8

Output Inverter T1 - T6

Symbol Conditions Maximum Ratings

MUBW 50-06 A8

V

CES

V

GES

I

C25

I

C80

RBSOA VGE = ±15 V; RG = 22 Ω; TVJ = 125°C I

t

SC

(SCSOA) non-repetitive

P

tot

TVJ = 25°C to 150°C 600 V

Continuous

±

20 V

TC = 25°C 75 A
TC = 80°C 50 A

= 100 A

Clamped inductive load; L = 100 µH V

V

= V

CE

; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C 10 µs

CES

CM

CEK

≤ V

CES

TC = 25°C 250 W

Symbol Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

V

V

I

CES

I

GES

t

d(on)

t

r

t

d(off)

t

f

E
E

C
Q

R

CE(sat)

GE(th)

on

off

ies

Gon

thJC

VJ

IC = 50 A; VGE = 15 V; TVJ = 25°C 1.9 2.3 V

TVJ = 125°C 2.1 V

IC = 1 mA; VGE = V

V

= V

CE

CES; VGE

CE

= 0 V; TVJ = 25°C 0.8 mA

TVJ = 125°C 0.7 mA

VCE = 0 V; VGE = ± 20 V 200 nA

Inductive load, T

= 125°C

VJ

VCE = 300 V; IC = 50 A
VGE = ±15 V; RG = 22 Ω

VCE = 25 V; VGE = 0 V; f = 1 MHz 2.8 nF
VCE= 300V; VGE = 15 V; IC = 50 A 120 nC

(per IGBT) 0.5 K/W

min. typ. max.

4.5 6.5 V

50 ns
60 ns

300 ns

30 ns

2.3 mJ

1.7 mJ

Output Inverter D1 - D6

Symbol Conditions Maximum Ratings

I

F25

I

F80

TC = 25°C 72 A
TC = 80°C 45 A

Symbol Conditions Characteristic Values

min. typ. max.

V

F

I

RM

t

rr

R

thJC

IF = 50 A; VGE = 0 V; TVJ = 25°C 1.5 1.7 V

TVJ = 125°C 1.3 V

IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C 25 A
VR = 300 V; VGE = 0 V 90 ns

(per diode) 1.19 K/W

© 2007 IXYS All rights reserved

20070921a

2 - 8

Brake Chopper T7

Symbol Conditions Maximum Ratings

MUBW 50-06 A8

V

CES

V

GES

I

C25

I

C80

RBSOA VGE = ±15 V; RG = 47 Ω; TVJ = 125°C I

t

SC

(SCSOA) non-repetitive

P

tot

TVJ = 25°C to 150°C 600 V

Continuous

±

20 V

TC = 25°C 35 A
TC = 80°C 25 A

= 40 A

Clamped inductive load; L = 100 µH V

V

= V

CE

; VGE = ±15 V; RG = 47 Ω; TVJ = 125°C 10 µs

CES

CEK

CM

≤ V

CES

TC = 25°C 125 W

Symbol Conditions Characteristic Values

= 25°C, unless otherwise specified)

(T

V

V

I

CES

I

GES

t

d(on)

t

r

t

d(off)

t

f

E
E

C
Q

R

CE(sat)

GE(th)

on

off

ies

Gon

thJC

VJ

IC = 25 A; VGE = 15 V; TVJ = 25°C 2.1 2.6 V

TVJ = 125°C 2.4 V

IC = 0.5 mA; VGE = V

V

= V

CE

CES; VGE

CE

= 0 V; TVJ = 25°C 0.5 mA

TVJ = 125°C 0.3 mA

VCE = 0 V; VGE = ± 20 V 200 nA

Inductive load, TVJ = 125°C
VCE = 300 V; IC = 25 A
VGE = ±15 V; RG = 47 Ω

VCE = 25 V; VGE = 0 V; f = 1 MH z 1.1 nF
VCE= 300 V; VGE = 15 V; IC = 25 A 65 nC

min. typ. max.

4.5 6.5 V

50 ns
60 ns

300 ns

30 ns

1.15 mJ

0.85 mJ

1 K/W

Brake Chopper D7

Symbol Conditions Maximum Ratings

V

RRM

I

F25

I

F80

TVJ = 25°C to 150°C 600 V

TC = 25°C 22 A
TC = 80°C 15 A

Symbol Conditions Characteristic Values

min. typ. max.

V

F

I

R

I

RM

t

rr

R

thJC

IF = 25 A; TVJ = 25°C 2.2 2.5 V

TVJ = 125°C 1.7 V

VR = V

TVJ = 25°C 0.06 mA

RRM;

TVJ = 125°C 0.07 mA

IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C 11 A
VR = 300 V 80 ns

3.2 K/W

© 2007 IXYS All rights reserved

20070921a

3 - 8

Temperature Sensor NTC

Symbol Conditions Characteristic Values

min. typ. max.

MUBW 50-06 A8

R

25

B

25/50

T = 25°C 4.75 5.0 5.25 kΩ

3375 K

Module

Symbol Conditions Maximum Ratings

T

VJ

T

JM

T

stg

V

ISOL

M

d

operating -40...+125 °C

+150 °C

-40...+125 °C

I

≤ 1 mA; 50/60 Hz 2500 V~

ISOL

Mounting torque (M5) 3 - 6 Nm

Symbol Conditions Characteristic Values

min. typ. max.

R

d
d

R

pin-chip

S

A

thCH

Creepage distance on surface 6 mm
Strike distance in air 6 mm

with heatsink compound 0.01 K/W

5mΩ

Weight 300 g

Dimensions in mm (1 mm = 0.0394")

© 2007 IXYS All rights reserved

20070921a

4 - 8

Input Rectifier Bridge D11 - D16

120

T

= 125°C

A

90

I

F

60

30

VJ

T

VJ

= 25°C

I

FSM

500

400

300

200

100

MUBW 50-06 A8

4

10

2

s

A

T

VJ

= 150°C

T

= 45°C

VJ

A

I2t

T

= 45°C

VJ

3

10

T

= 150°C

VJ

0

0123

V

V

F

Fig. 1 Forward current versus

50Hz, 80% V

0

0.001 0.01 0.1 1

Fig. 2 Surge overload current Fig. 3 I2t versus time per diode

RRM

s

t

voltage drop per diode

450

400

W

350

P

tot

300

R

:

thA

0.05 K/W

0.15 K/W

250

0.3 K/W

0.5 K/W

200

150

1 K/W
2 K/W
5 K/W

100

50

0

0 40 80 120

I

d(AV)M

0 20 40 60 80 100 120 140

A

T

amb

Fig. 4 Power dissipation versus direct output current and ambient temperature, sin 180°

1.2

K/W

1.0

Z

thJC

0.8

2

10

23456789110

ms

t

140

A

120

I

d(AV)

100

80

60

40

20

0

°C °C

0 20406080100120140

T

C

Fig. 5 Max. forward current

versus case temperature

0.6

0.4

0.2

0.0

0.001 0.01 0.1 1 10

Fig. 6 Transient thermal impedance junction to case

t

© 2007 IXYS All rights reserved

DWN 21

s

20070921a

5 - 8

Output Inverter T1 - T6 / D1 - D6

MUBW 50-06 A8

150

V

= 17 V

GE

A

120

I

C

15 V

90

60

30

TVJ = 25°C

0

01234567

V

CE

13 V

11 V

9 V

V

150

A

120

I

C

V

GE

= 17 V

90

60

30

0

01234567

Fig. 7 Typ. output characteristics Fig. 8 Typ. output characteristics

I

100

A

80

F

60

TVJ = 125°C

40

160

VCE = 20 V

A

120

I

C

80

15 V

V

13 V

11 V

9 V

TVJ = 125°C

V

CE

40

TVJ = 125°C

TVJ = 25°C

0

4 6 8 10121416

V

GE

V

20

0

0.5 1.0 1.5 2.0

Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics

of free wheeling diode

20

VCE = 600 V

V

= 35 A

I

C

15

V

GE

10

5

0

0 40 80 120 160

nC

Q

G

50

A

40

I

RM

30

t

rr

20

10

I

RM

0

0 200 400 600 800 1000

Fig. 11 Typ. turn on gate charge Fig. 12 Typ. turn off characteristics

of free wheeling diode

© 2007 IXYS All rights reserved

TVJ = 25°C

V

F

TVJ = 125°C

= 300 V

V

R

= 30 A

I

F

-di/dt

V

A/μs

MUBW50-06A8

200

ns

160

120

80

40

0

20070921a

6 - 8

t

rr

Output Inverter T1 - T6 / D1 - D6

MUBW 50-06 A8

d(on)

r

A

180

ns

150

120

90

60

30

0

5

mJ

4

E

t

off

E

off

VCE = 600 V

= ±15 V

V

GE

= 39 Ω

R

G

= 125°C

T

VJ

3

2

1

t

d(off)

0

0 20406080

I

C

500

ns

400

t

300

200

100

t

f

0

A

9

VCE = 600 V

= ±15 V

V

GE

mJ

E

on

= 39 Ω

R

G

= 125°C

T

VJ

6

E

on

t

3

t

0

0 20 40 60 80 100 120

I

C

Fig. 13 Typ. turn on energy and switching Fig. 14 Typ. turn off energy and switching

times versus collector current times versus collector current

on

t

d(on)

r

160

ns

120

80

t

4

V

= 600 V

CE

mJ

E

on

= ±15 V

V

GE

= 35 A

I

C

T

= 125°C

VJ

E

2

t

3

V

= 600 V

CE

mJ

V

= ±15 V

GE

= 35 A

I

E

off

C

= 125°C

T

VJ

2

t

d(off)

1

40

600

ns

t

400

E

off

200

0

0 102030405060

Fig. 15 Typ. turn on energy and switching Fig.16 Typ. turn off energy and switching

times versus gate resistor times versus gate resistor

120

A

100

I

CM

80

60

40

RG = 39 Ω

= 125°C

T

VJ

20

0

0 200 400 600 800

Fig. 17 Reverse biased safe operating area Fig. 18 Typ. transient thermal impedance

RBSOA

© 2007 IXYS All rights reserved

t

f

0

Ω

R

G

0

0 102030405060

R

G

0

Ω

10

Z

K/W

1

thJC

diode

IGBT

0.1

0.01

0.001

0.0001

V

V

CE

0.000010.0001 0.001 0.01 0.1 1 10

single pulse

MUBW5006A8

s

t

20070921a

7 - 8

Brake Chopper T7 / D7

MUBW 50-06 A8

60

A

VGE = 15 V

TVJ = 25°C

50

I

C

40

TVJ = 125°C

30

20

A

I

15

F

TVJ = 125°C

10

20

5

10

0

012345

V

CE

V

0

0123

TVJ = 25°C

V

F

V

Fig. 19 Typ. output characteristics Fig. 20 Typ. forward characteristics

of free wheeling diode

2

mJ

E

off

VCE = 600 V
V

1

R
T

VJ

= ±15 V

GE

= 82 Ω

G

= 125°C

t

d(off)

400

ns

200

d(off)

1000

ns

750

500

t

1.00

VCE = 600 V

= ±15 V

V

GE

mJ

E

t

off

= 20 A

I

C

= 125°C

T

VJ

t

0.75

E

off

0

0 1020304050

I

C

Fig. 21 Typ. turn off energy and switching Fig. 22 Typ. turn off energy and switching

times versus collector current times versus gate resistor

10

K/W

1

Z

thJC

0.1

0.01

0.001

single pulse

0.0001

0.001 0.01 0.1 1 10

Fig. 23 Typ. transient thermal impedance Fig. 24 Typ. thermistorresistance

© 2007 IXYS All rights reserved

E

off

t

f

0

A

0.50

0 20 40 60 80 100 120

R

G

250

t

f

0

Ω

Temperature Sensor NTC

diode

IGBT

10000

Ω

R

1000

100

s

t

0 25 50 75 100 125 150

T

C

versus temperature

20070921a

8 - 8