Page 1
Converter - Brake - Inverter Module (CBI2)
3
NPT
-IGBT
22
21
MUBW 35-12 E7
D11 D13 D15
123
D12 D14 D16
23 24
14
D7
T7
16
15
11
10
7
D1
T1
18
17
65
D2
T2 T4 T6
12
T3
D3
D4
20
19
13
T5
D5
D6
NTC
8
4
9
Three Phase Brake Chopper Three Phase
Rectifier Inverter
V
= 1600 V V
RRM
I
= 42 A I
FAVM
I
= 300 A V
FSM
Input Rectifier Bridge D11 - D16
Symbol Conditions Maximum Ratings
V
RRM
I
FAV
I
DAVM
I
FSM
P
tot
TC = 80°C; sine 180° 30 A
TC = 80°C; rectangular; d = 1/
TVJ = 25°C; t = 10 ms; sine 50 Hz 300 A
TC = 25°C 100 W
Symbol Conditions Characteristic Values
V
F
I
R
IF = 35 A; TVJ = 25°C 1.2 1.4 V
TVJ = 125°C 1.2 V
VR = V
TVJ = 125°C 0.4 mA
CES
C25
CE(sat)
= 1200 V V
= 35 A I
= 2.3 V V
CES
C25
CE(sat)
= 1200 V
= 52 A
= 2.2 V
1600 V
bridge 80 A
3;
(T
= 25°C, unless otherwise specified)
VJ
TVJ = 25°C 0.02 mA
RRM;
min. typ. max.
E72873
See outline drawing for pin arrangement
Application: AC motor drives with
• Input from single or three phase grid
• Three phase synchronous or
• asynchronous motor
• electric braking operation
Features
• High level of integration - only one power
semiconductor module required for the
whole drive
• Inverter with NPT3 IGBTs
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current
• Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
• Industry standard package with insulated
copper base plate and soldering pins for
PCB mounting
• Temperature sense included
R
thJC
IXYS reserves the right to change limits, test conditions and dimensions.
(per diode) 1.3 K/W
20070912a
1 - 8© 2007 IXYS All rights reserved
Page 2
MUBW 35-12 E7
Output Inverter T1 - T6
Symbol Conditions Maximum Ratings
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA) non-repetitive
P
tot
TVJ = 25°C to 150°C 1200 V
Continuous
±
20 V
TC = 25°C 52 A
TC = 80°C 36 A
RBSOA; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C 70 A
Clamped inductive load; L = 100 µH
V
= 900 V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C 10 µs
CE
VCES
TC = 25°C 225 W
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
V
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
E
C
Q
R
CE(sat)
GE(th)
on
off
ies
Gon
thJC
VJ
IC = 35 A; VGE = 15 V; TVJ = 25°C 2.2 2.8 V
TVJ = 125°C 2.5 V
IC = 1 mA; VGE = V
V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C 0.4 mA
TVJ = 125°C 0.4 mA
VCE = 0 V; VGE = ± 20 V 200 nA
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 35 A
VGE = ±15 V; RG = 39 Ω
VCE = 25 V; VGE = 0 V; f = 1 MHz 2 nF
V
= 600V; VGE = 15 V; IC = 35 A 150 nC
CE
(per IGBT) 0.55 K/W
min. typ. max.
4.5 6.5 V
85 ns
50 ns
440 ns
50 ns
5.4 mJ
2.6 mJ
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at TJ = 125°C)
T1 - T6 / D1 - D6
IGBT (typ. at VGE = 15 V; TJ = 125°C)
Free Wheeling Diode (typ. at TJ = 125°C)
T7 / D7
IGBT (typ. at VGE = 15 V; TJ = 125°C)
Free Wheeling Diode (typ. at TJ = 125°C)
Thermal Response
D11 - D16
Rectifier Diode (typ.)
V0 = 0.83 V; R0 = 11 m
V0 = 0.95 V; R0 = 45 m
V0 = 1.26V; R0 = 15 m
V0 = 1.37 V; R0 = 62 m
V0 = 1.39 V; R0 = 56 m
C
= 0.106 J/K; R
th1
C
= 0.79 J/K; R
th2
th2
Ω
Ω
Ω
Ω
Ω
= 1.06 K/W
th1
= 0.239 K/W
Output Inverter D1 - D6
Symbol Conditions Maximum Ratings
I
F25
I
F80
TC = 25°C 50 A
TC = 80°C 33 A
Symbol Conditions Characteristic Values
min. typ. max.
V
I
RM
t
rr
E
R
F
rec(off)
thJC
IF = 35 A; VGE = 0 V; TVJ = 25°C 2.8 V
TVJ = 125°C 1.8 V
51 A
IF = 30 A; diF/dt = -1100 A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
180 ns
1.8 mJ
(per diode) 1.19 K/W
T1 - T6 / D1 - D6
IGBT (typ.)
C
= tbd J/K; R
th1
C
= tbd J/K; R
th2
th1
th2
Free Wheeling Diode (typ.)
C
= tbd J/K; R
th1
C
= tbd J/K; R
th2
th1
th2
T7 / D7
IGBT (typ.)
C
= 0.156 J/K; R
th1
C
= 1.162 J/K; R
th2
th1
th2
Free Wheeling Diode (typ.)
C
= 0.043 J/K; R
th1
C
= 0.54 J/K; R
th2
th1
= 0.462 K/W
th2
= tbd K/W
= tbd K/W
= tbd K/W
= tbd K/W
= 0.545 K/W
= 0.155 K/W
= 2.738 K/W
20070912a
2 - 8© 2007 IXYS All rights reserved
Page 3
Brake Chopper T7
Symbol Conditions Maximum Ratings
MUBW 35-12 E7
V
CES
V
GES
V
GEM
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA) non-repetitive
P
tot
TVJ = 25°C to 150°C 1200 V
Continuous
Transient
±
20 V
±
30 V
TC = 25°C 35 A
TC = 80°C 25 A
RBSOA; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C 35 A
Clamped inductive load; L = 100 µH
V
= V
CE
; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C 10 µs
CES
VCES
TC = 25°C 180 W
Symbol Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
V
V
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
C
Q
R
CE(sat)
GE(th)
off
ies
Gon
thJC
VJ
IC = 20 A; VGE = 15 V; TVJ = 25°C 2.3 3 V
TVJ = 125°C 2.6 V
IC = 0.6 mA; VGE = V
V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C 0.8 mA
TVJ = 125°C 0.8 mA
VCE = 0 V; VGE = ± 20 V 200 nA
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 20 A
VGE = ±15 V; RG = 82 Ω
VCE = 25 V; VGE = 0 V; f = 1 MH z 1000 pF
V
= 600V; VGE = 15 V; IC = 20 A 70 nC
CE
min. typ. max.
4.5 6.5 V
100 ns
75 ns
500 ns
70 ns
2.4 mJ
0.7 K/W
Brake Chopper D7
Symbol Conditions Maximum Ratings
V
RRM
I
F25
I
F80
TVJ = 25°C to 150°C 1200 V
TC = 25°C 16 A
TC = 80°C 11 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
R
I
RM
t
rr
R
thJC
IF = 20 A; TVJ = 25°C 3.6 V
TVJ = 125°C 2.6 V
VR = V
TVJ = 25°C 0.06 mA
RRM;
TVJ = 125°C 0.07 mA
IF = 20 A; diF/dt = -400 A/µs; TVJ = 125°C 13 A
VR = 600 V 110 ns
3.2 K/W
20070912a
3 - 8© 2007 IXYS All rights reserved
Page 4
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
MUBW 35-12 E7
R
25
B
25/50
T = 25°C 4.75 5.0 5.25 kΩ
3375 K
Module
Symbol Conditions Maximum Ratings
T
VJ
T
JM
T
stg
V
ISOL
M
d
I
= 1 mA; 50/60 Hz 2500 V~
ISOL
Mounting torque (M5) 2.7 - 3.3 Nm
-40...+125 °C
150 °C
-40...+125 °C
Symbol Conditions Characteristic Values
min. typ. max.
R
d
d
R
pin-chip
S
A
thCH
Creepage distance on surface 6 mm
Strike distance in air 6 mm
with heatsink compound 0.02 K/W
5mΩ
Weight 180 g
Dimensions in mm (1 mm = 0.0394")
20070912a
4 - 8© 2007 IXYS All rights reserved
Page 5
Input Rectifier Bridge D11 - D16
120
A
100
I
F
80
T
VJ
T
VJ
= 125°C
= 25°C
I
FSM
200
150
MUBW 35-12 E7
3
10
2
s
A
TVJ= 45°C
A
I2t
60
40
20
0
0.0 0.6 1.2 1.8 2.4
V
V
F
Fig. 1 Forward current versus voltage
drop per diode
350
W
300
250
P
tot
200
150
100
50
100
TVJ= 45°C
TVJ= 150°C
TVJ= 150°C
50
50Hz, 80% V
0
0.001 0.01 0.1 1
RRM
2
s
10
23456789110
t
Fig. 2 Surge overload current Fig. 3 I2t versus time per diode
80
A
70
I
R
:
thA
0.05 K/W
0.15 K/W
0.3 K/W
0.5 K/W
1 K/W
2 K/W
5 K/W
d(AV)
60
50
40
30
20
10
ms
t
0
0 40 80 120
I
d(AV)M
0 20406080100120140
A
T
amb
CC
Fig. 4 Power dissipation versus direct output current and ambient temperature, sin 180°
K/W
1.2
Z
thJC
0.8
0.4
0.0
0.001 0.01 0.1 1 10
Fig. 6 Transient thermal impedance junction to case
DWN 17
s
t
0
0 20 40 60 80 100 120 140
T
C
Fig. 5 Max. forward current versus
case temperature
20070912a
5 - 8© 2007 IXYS All rights reserved
Page 6
Output Inverter T1 - T6 / D1 - D6
MUBW 35-12 E7
120
A
V
GE
= 17 V
100
I
C
80
60
40
20
TVJ = 25°C
0
01234567
V
CE
15 V
13 V
11 V
9 V
V
120
A
V
100
I
C
80
60
40
20
0
01234567
Fig. 7 Typ. output characteristics Fig. 8 Typ. output characteristics
120
A
VCE = 20 V
100
I
C
80
60
40
TVJ = 125°C
20
TVJ = 25°C
0
4 6 8 10 12 14 16
V
GE
V
90
A
75
I
F
60
45
TVJ = 125°C
30
15
0
01234
GE
= 17 V
V
CE
TVJ = 25°C
V
F
15 V
13 V
11 V
9 V
TVJ = 125°C
V
V
Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics of
free wheeling diode
20
V
15
V
GE
10
5
0
0 40 80 120 160 200
VCE = 600 V
I
= 35 A
C
nC
Q
G
10
K/W
1
Z
thJC
0.1
0.01
0.001
single pulse
0.0001
0.001 0.01 0.1 1 10
Fig. 11 Typ. turn on gate charge Fig. 12 Typ. transient thermal impedance
diode
IGBT
MUBW3512E7
s
t
20070912a
6 - 8© 2007 IXYS All rights reserved
Page 7
Output Inverter T1 - T6 / D1 - D6
MUBW 35-12 E7
20
t
mJ
d(on)
16
E
on
12
8
4
E
E
t
r
on
rec(off)
VCE = 600 V
V
= ±15 V
GE
R
= 39 Ω
G
T
= 125°C
VJ
0
0 20406080
I
C
100
ns
90
80
70
t
60
50
40
30
20
10
0
A
6
VCE = 600 V
V
= ±15 V
mJ
E
off
GE
R
= 39 Ω
G
T
= 125°C
VJ
4
2
0
0 20406080
I
C
1200
ns
E
off
1000
t
800
600
t
d(off)
400
200
t
f
0
A
Fig. 13 Typ. turn on energy and switching Fig. 14 Typ. turn off energy and switching
times versus collector current times versus collector current
8
V
= 600 V
CE
mJ
E
on
6
= ±15 V
V
GE
I
= 35 A
C
= 125°C
T
VJ
E
on
t
d(on)
4
160
ns
120
80
t
4
V
= 600 V
CE
mJ
V
= ±15 V
GE
= 35 A
I
3
C
T
= 125°C
VJ
E
off
E
off
2
800
ns
600
400
t
t
t
E
REC(off)
r
2
0
10 20 30 40 50 60 70 80
R
G
Ω
40
0
d(off)
1
0
10 20 30 40 50 60 70 80
Fig. 15 Typ. turn on energy and switching Fig.16 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
70
24Ω
RG=
24Ω
15Ω
15Ω
TVJ= 125°C
60
IF= 30 A
VR= 600 V
50
40
[A]
RM
30
I
20
10
0
0 200 400 600 800 1000 1200 1400 1600 1800
Fig. 17 Typ. turn off characteristics Fig. 18 Typ. turn off characteristics
75Ω
75Ω
-di
/dt [A/µs]
F
56Ω
56Ω
39Ω
39Ω
350
I
300
RM
250
200
t
RR
150
100
50
0
12
TVJ= 125°C
10
VR= 600 V
8
[ns]
rr
t
6
[µC]
rr
Q
4
2
0
0 200 400 600 800 1000 1200 1400 1600 18 00
75
RG=
39
Ω
56
Ω
Ω
15A
7,5A
-di
/dt [A/µs]
F
of free wheeling diode of free wheeling diode
24
200
t
f
0
Ω
R
G
15
Ω
70A
Ω
Ex
D
50A
35A
IF=
al
w
20070912a
7 - 8© 2007 IXYS All rights reserved
Page 8
Brake Chopper T7 / D7
MUBW 35-12 E7
50
40
A
I
C
TVJ = 25°C
30
20
TVJ = 125°C
10
VGE = 15 V
0
012345
V
CE
V
30
A
25
I
F
20
15
TVJ = 125°C
10
TVJ = 25°C
5
0
012345
V
F
V
Fig. 19 Typ. output characteristics Fig. 20 Typ. forward characteristics of
free wheeling diode
t
d(off)
800
ns
600
400
t
d(off)
1000
ns
750
500
t
3.0
mJ
2.5
VCE = 600 V
V
= ±15 V
GE
I
= 20 A
C
T
= 125°C
VJ
E
t
off
4
VCE = 600 V
mJ
V
= ±15 V
GE
R
E
off
= 82 Ω
G
3
T
= 125°C
VJ
2
1
E
off
0
0 5 10 15 20 25 30 35
I
C
Fig. 21 Typ. turn off energy and switching Fig. 22 Typ. turn off energy and switching
times versus collector current times versus gate resistor
10
K/W
1
Z
thJC
0.1
0.01
0.001
single pulse
0.0001
0.001 0.01 0.1 1 10
t
Fig. 23 Typ. transient thermal impedance Fig. 24 Typ. thermistorresistance versus
t
f
A
diode
IGBT
s
200
0
10000
R
E
off
2.0
0 20 40 60 80 100 120 140
Temperature Sensor NTC
Ω
1000
100
0 25 50 75 100 125 150
T
temperature
R
G
t
f
Ω
MUBW3512E7
C
250
0
20070912a
8 - 8© 2007 IXYS All rights reserved
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