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MUBW35-12A8
Data Sheet
8 pgs174.42 Kb0

IXYS MUBW35-12A8 Data Sheet

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Page 1
Converter - Brake - Inverter Module (CBI3)
22
21
MUBW 35-12 A8
T1
T2
D1
6
D2
D11 D13 D15
23
1
D12
D14
D16
23
14
7
D7
16 15
T7
11 10
24
Three Phase Brake Chopper Three Phase Rectifier Inverter
V I
FAVM
I
FSM
RRM
= 1600 V V = 42 A I = 300 A V
= 1200 V V
CES
= 35 A I
C25
= 2.3 V V
CE(sat)
CES
C25
CE(sat)
= 1200 V = 50 A = 2.5 V
T3
D3
D4
20 19
5
18 17
T4
12 13
NTC
T5
T6
D5
4
D6
See outline drawing for pin arrangement
E72873
8
9
Input Rectifier D11 - D16
Symbol Conditions Maximum Ratings
V
I
FAV
I
DAVM
I
FSM
P
tot
TC = 80°C; sine 180° 30 A TC = 80°C; rectangular; d = 1/3; bridge 80 A TVJ = 25°C; t = 10 ms; sine 50 Hz 300 A
TC = 25°C 100 W
1600 V
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
I
R
VJ
F
R
thJC
IF = 35 A; TVJ = 25°C 1.2 1.4 V
TVJ = 125°C 1.2 V
VR = V
TVJ = 25°C 0.02 mA
RRM;
TVJ = 125°C 0.4 mA
(per diode) 1.3 K/W
min. typ. max.
Application: AC motor drives with
●
Input from single or three phase grid
●
Three phase synchronous or asynchronous motor
●
electric braking operation
Features
●
High level of integration - only one power semiconductor module required for the whole drive
●
NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness
●
Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery
●
Industry standard package with insulated copper base plate and soldering pins for PCB mounting
●
Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20070912a
1 - 8
Page 2
Output Inverter T1 - T6
Symbol Conditions Maximum Ratings
MUBW 35-12 A8
V
CES
V
GES
I
C25
I
C80
RBSOA VGE = ±15 V; RG = 47 Ω; TVJ = 125°C I
t
SC
(SCSOA) non-repetitive
P
tot
TVJ = 25°C to 150°C 1200 V
Continuous
±
20 V
TC = 25°C 50 A TC = 80°C 35 A
= 70 A
Clamped inductive load; L = 100 µH V
V
= V
CE
; VGE = ±15 V; RG = 47 Ω; TVJ = 125°C 10 µs
CES
CM
CEK
≤ V
CES
TC = 25°C 225 W
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
V
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E E
C Q
R
CE(sat)
GE(th)
on
off
ies
Gon
thJC
VJ
IC = 35 A; VGE = 15 V; TVJ = 25°C 2.5 3.1 V
TVJ = 125°C 2.9 V
IC = 1 mA; VGE = V
V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C 1.1 mA
TVJ = 125°C 1.0 mA
VCE = 0 V; VGE = ± 20 V 200 nA
Inductive load, TVJ = 125°C VCE = 600 V; IC = 35 A VGE = ±15 V; RG = 47 Ω
VCE = 25 V; VGE = 0 V; f = 1 MHz 1.65 nF VCE= 600 V; VGE = 15 V; IC = 35 A 120 nC
(per IGBT) 0.55 K/W
min. typ. max.
4.5 6.5 V
100 ns
70 ns
500 ns
70 ns
5.3 mJ
3.9 mJ
Output Inverter D1 - D6
Symbol Conditions Maximum Ratings
I
F25
I
F80
TC = 25°C 50 A TC = 80°C 35 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
RM
t
rr
R
thJC
IF = 35 A; VGE = 0 V; TVJ = 25°C 2.4 2.8 V
TVJ = 125°C 1.8 V
IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C 27 A VR = 600 V; VGE = 0 V 150 ns
(per diode) 1.19 K/W
© 2007 IXYS All rights reserved
20070912a
2 - 8
Page 3
Brake Chopper T7
Symbol Conditions Maximum Ratings
MUBW 35-12 A8
V
CES
V
GES
I
C25
I
C80
RBSOA VGE = ±15 V; RG = 82 Ω; TVJ = 125°C I
t
SC
(SCSOA) non-repetitive
P
tot
TVJ = 25°C to 150°C 1200 V
Continuous
±
20 V
TC = 25°C 35 A TC = 80°C 25 A
= 35 A
Clamped inductive load; L = 100 µH V
V
= V
CE
; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C 10 µs
CES
CEK
CM
≤ V
CES
TC = 25°C 180 W
Symbol Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
V
V
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E E
C Q
R
CE(sat)
GE(th)
on
off
ies
Gon
thJC
VJ
IC = 20 A; VGE = 15 V; TVJ = 25°C 2.3 3.0 V
TVJ = 125°C 2.6 V
IC = 0.6 mA; VGE = V
V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C 0.8 mA
TVJ = 125°C 0.8 mA
VCE = 0 V; VGE = ± 20 V 200 nA
Inductive load, TVJ = 125°C VCE = 600 V; IC = 20 A VGE = ±15 V; RG = 82 Ω
VCE = 25 V; VGE = 0 V; f = 1 MH z 1 nF VCE= 600 V; VGE = 15 V; IC = 20 A 70 nC
min. typ. max.
4.5 6.5 V
100 ns
75 ns
500 ns
70 ns
3.1 mJ
2.4 mJ
0.7 K/W
Brake Chopper D7
Symbol Conditions Maximum Ratings
V
I
F25
I
F80
TVJ = 25°C to 150°C 1200 V
TC = 25°C 16 A TC = 80°C 11 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
R
I
RM
t
rr
R
thJC
IF = 20 A; TVJ = 25°C 3.2 3.6 V
TVJ = 125°C 2.5 V
VR = V
TVJ = 25°C 0.06 mA
RRM;
TVJ = 125°C 0.07 mA
IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C 13 A VR = 600 V 110 ns
3.2 K/W
© 2007 IXYS All rights reserved
20070912a
3 - 8
Page 4
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
MUBW 35-12 A8
R
25
B
25/50
T = 25°C 4.75 5.0 5.25 kΩ
3375 K
Module
Symbol Conditions Maximum Ratings
T
VJ
T
JM
T
stg
V
ISOL
M
d
operating -40...+125 °C
+150 °C
-40...+125 °C
I
≤ 1 mA; 50/60 Hz 2500 V~
ISOL
Mounting torque (M5) 3 - 6 Nm
Symbol Conditions Characteristic Values
min. typ. max.
R
d d
R
pin-chip
S
A
thCH
Creepage distance on surface 6 mm Strike distance in air 6 mm
with heatsink compound 0.01 K/W
5mΩ
Weight 300 g
Dimensions in mm (1 mm = 0.0394")
© 2007 IXYS All rights reserved
20070912a
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Page 5
Input Rectifier Bridge D11 - D16
120
A
100
I
F
80
T
VJ
T
VJ
= 125°C
= 25°C
I
FSM
200
150
MUBW 35-12 A8
3
10
2
A
A
TVJ= 45°C
s
I2t
60
40
20
0
0.0 0.6 1.2 1.8 2.4 V
F
Fig. 1 Forward current versus
voltage drop per diode
350
W
300
250
P
tot
200
150
100
50
100
TVJ= 45°C
TVJ= 150°C
TVJ= 150°C
50
50Hz, 80% V
0
V
0.001 0.01 0.1 1
Fig. 2 Surge overload current Fig. 3 I
RRM
2
s
10
t
23456789110
ms
t
2
t versus time per diode
80
A
70
I
R
:
thA
0.05 K/W
0.15 K/W
0.3 K/W
0.5 K/W 1 K/W 2 K/W 5 K/W
d(AV)
60
50
40
30
20
10
0
0 40 80 120
I
d(AV)M
0 20 40 60 80 100 120 140
A
T
amb
CC
Fig. 4 Power dissipation versus direct output current and ambient temperature, sin 180°
K/W
1.2
Z
thJC
0.8
0.4
0.0
0.001 0.01 0.1 1 10
Fig. 6 Transient thermal impedance junction to case
DWN 17
s
t
© 2007 IXYS All rights reserved
0
0 20 40 60 80 100 120 140
T
C
Fig. 5 Max. forward current
versus case temperature
20070912a
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Page 6
Output Inverter T1 - T6 / D1 - D6
MUBW 35-12 A8
110
V
= 17 V
100
A
I
C
80
GE
15 V
60
40
20
0
01234567
V
CE
Fig. 7 Typ. output characteristics Fig. 8 Typ. output characteristics
110
VCE = 20 V
100
A
80
I
C
60
40
20
TVJ = 125°C
0
4 6 8 10 12 14 16
TVJ = 25°C
V
GE
13 V
11 V
9 V
TVJ = 25°C
V
110
V
= 17 V
100
A
I
C
80
GE
15 V
13 V
60
11 V
40
20
9 V
TVJ = 125°C
0
01234567
V
CE
V
110
100
A
I
F
80
60
TVJ = 125°C
40
TVJ = 25°C
20
0
V
01234
V
F
V
Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics
20
VCE = 600 V
V
I
= 35 A
C
15
V
GE
10
5
0
04080120160
Fig. 11 Typ. turn on gate charge Fig. 12 Typ. turn off characteristics
© 2007 IXYS All rights reserved
of free wheeling diode
50
t
rr
40
A
I
RM
30
20
TVJ = 125°C
= 300 V
V
10
I
RM
0
nC
Q
G
0 200 400 600 800 1000
R
I
= 30 A
F
MUBW35-12A8
A/μs
-di/dt
200
ns
160
120
80
40
0
t
rr
of free wheeling diode
20070912a
6 - 8
Page 7
Output Inverter T1 - T6 / D1 - D6
MUBW 35-12 A8
9
mJ
E
on
6
t
d(on)
3
E
on
t
r
VCE = 600 V V
= ±15 V
GE
R
= 39 Ω
G
T
= 125°C
VJ
0
0 20406080
I
C
A
180
ns
150
120
90
60
30
0
6
VCE = 600 V V
= ±15 V
GE
mJ
R
= 39 Ω
E
t
off
G
T
= 125°C
VJ
4
E
off
1200
ns
1000
800
t
600
t
d(off)
2
400
200
t
f
0
0 20406080
I
C
0
A
Fig. 13 Typ. turn on energy and switching Fig. 14 Typ. turn off energy and switching
times versus collector current times versus collector current
t
r
E
t
d(on)
on
160
ns
120
80
t
6
V
= 600 V
CE
mJ
V
= ±15 V
GE
= 35 A
I
E
on
C
T
= 125°C
VJ
4
2
40
8
mJ
E
E
off
off
6
V
= 600 V
CE
V
= ±15 V
4
GE
= 35 A
I
C
T
= 125°C
VJ
2
t
d(off)
800
ns
600
400
200
t
0
0 20406080100
R
G
Fig. 15 Typ. turn on energy and switching Fig.16 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
60
A
I
CM
40
20
RG = 39 Ω
= 125°C
T
VJ
0
0 200 400 600 800 1000 1200 1400
V
Fig. 17 Reverse biased safe operating area Fig. 18 Typ. transient thermal impedance
RBSOA
t
f
0
Ω
0
87 88 89 90
R
G
0
Ω
10
K/W
1
Z
thJC
diode
IGBT
0.1
0.01
0.001
0.0001
V
CE
0.00001 0.0001 0.001 0.01 0.1 1 10
single pulse
MUBW3512A8
s
t
© 2007 IXYS All rights reserved
20070912a
7 - 8
Page 8
Brake Chopper T7 / D7
MUBW 35-12 A8
50
VGE = 15 V
40
A
I
C
TVJ = 25°C
TVJ = 125°C
30
20
10
0
012345
V
CE
V
50
A
40
I
F
30
20
TVJ = 125°C
10
TVJ = 25°C
0
012345
V
F
V
Fig. 19 Typ. output characteristics Fig. 20 Typ. forward characteristics
of free wheeling diode
t
d(off)
800
ns
600
400
t
d(off)
1000
ns
750
500
t
3.0
VCE = 600 V
= ±15 V
V
GE
mJ
E
t
off
= 20 A
I
C
= 125°C
T
VJ
2.5
4
VCE = 600 V V
mJ
E
off
= ±15 V
GE
= 82 Ω
R
G
3
= 125°C
T
VJ
2
1
E
off
0
0 5 10 15 20 25 30 35
I
C
Fig. 21 Typ. turn off energy and switching Fig. 22 Typ. turn off energy and switching
times versus collector current times versus gate resistor
10
K/W
1
Z
thJC
0.1
0.01
0.001
single pulse
0.0001
0.001 0.01 0.1 1 10 t
Fig. 23 Typ. transient thermal impedance Fig. 24 Typ. thermistorresistance
t
f
diode
IGBT
E
off
200
0
A
2.0
0 20 40 60 80 100 120 140
R
G
250
t
f
0
Ω
Temperature Sensor NTC
10000
Ω
R
1000
100
s
0 25 50 75 100 125 150
C
T
versus temperature
© 2007 IXYS All rights reserved
20070912a
8 - 8
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