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MUBW30-12E6K
Data Sheet
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IXYS MUBW30-12E6K Data Sheet

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MUBW30-12E6K
E72873
Converter - Brake - Inverter Module (CBI 1)
SPT IGBT
Part name (Marking on product)
MUBW30-12E6K
Rectifier
V
= 1600 V V
RRM
= 130 A I
I
DAVM25
= 300 A V
I
FSM
Brake
Chopper
= 1200 V V
CES
= 19 A I
C25
= 2.9 V V
CE(sat)
Three Phase
Inverter
= 1200 V
CES
= 29 A
C25
= 2.9 V
CE(sat)
Features:
• High le power semiconductor module required for the whole drive
• Inverter with SPT IGBTs
- low saturation voltage
- positive temper
- fast switching
- short tail current
• Epitaxial free wheeling diodes with
hiperfast and soft reverse recovery
• Industry standard package with insu lated copper base plate and soldering pins for PCB mounting
• Temperature sense included
vel of integration - only one
ature coefficient
Application:
AC motor drives with
• Input from single or three phase g
• Three phase synchronous or asynchronous motor
• Electric braking operation
rid
Pin configuration see outlines.
Package:
• UL registered
•
Industry standard E1-pack
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20071113a
1 - 9
MUBW30-12E6K
Ouput Inverter T1 - T6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
C
ies
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
I
CM
t
SC
(SCSOA)
R
thJC
R
thCH
collector emitter voltage
max. DC gate voltage max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
TVJ = 25°C to 150°C 1200 V
continuous transient
TC = 25°C TC = 80°C
±20 ±30
30 21
TC = 25°C 130 W
IC = 30 A; VGE = 15 V TVJ = 25°C TVJ = 125°C
3.1
3.8
3.6 V
IC = 0.6 mA; VGE = VCE TVJ = 25°C 4.5 6.5 V
VCE = V TVJ = 125°C 0.6
; VGE = 0 V TVJ = 25°C
CES
1 mA
mA
VCE = 0 V; VGE = ±20 V 200 nA
VCE = 25 V; VGE = 0 V; f = 1 MHz 1180 pF
VCE = 600 V; VGE = 15 V; IC = 20 A 100 nC
inductive load TVJ = 125°C
= 600 V; IC = 20 A
V
CE
VGE = ±15 V; RG = 68 W
RBSOA; VGE = ±15 V; RG = 68 W L = 100 µH; V
CEmax
clamped induct. load
= V
- LS·di/dt
CES
TVJ = 125°C
VCE = 900 V; VGE = ±15 V; TVJ = 125°C
210 110 320 1
80
4.1
1.5
45 A
10 µs
ns ns ns
ns mJ mJ
RG = 68 W; non-repetitive
(per IGBT) 0.95 K/W
(per IGBT) 0.35 K/W
V V
A A
V
Output Inverter D1 - D6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
RRM
I
F25
I
F80
V
F
max. repetitve reverse voltage
forward current
forward voltage
TVJ = 150°C 1200 V
TC = 25°C TC = 80°C
IF = 30 A; VGE = 0 V TVJ = 25°C
49 32
2.9 V
TVJ = 125°C 2.0
I
RM
t
rr
E
rec(off)
R
thJC
R
thCH
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
max. reverse recovery current reverse recovery time reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
VR = 600 V diF /dt = -500 A/µs TVJ = 125°C
= 30 A; VGE = 0 V
IF
27
150
tbd
(per diode) 0.9 K/W
(per diode) 0.3 K/W
TC = 25°C unless otherwise stated
20071113a
2 - 9
A A
V
A ns µJ
MUBW30-12E6K
Brake Chopper T7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
C
ies
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
I
CM
t
SC
(SCSOA)
R
thJC
R
thCH
collector emitter voltage
max. DC gate voltage max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
TVJ = 25°C to 150°C 1200 V
continuous transient
TC = 25°C TC = 80°C
±20 ±30
19 13
TC = 25°C 90 W
IC = 15 A; VGE = 15 V TVJ = 25°C TVJ = 125°C
2.9
3.5
3.4 V
IC = 0.4 mA; VGE = VCE TVJ = 25°C 4.5 6.5 V
VCE = V TVJ = 125°C 0.8
; VGE = 0 V TVJ = 25°C
CES
0.5 mA mA
VCE = 0 V; VGE = ±20 V 100 nA
VCE = 25 V; VGE = 0 V; f = 1 MHz 600 pF
VCE = 600 V; VGE = 15 V; IC = 10 A 45 nC
inductive load TVJ = 125°C VCE = 600 V; IC = 10 A VGE = ±15 V; RG = 82 W
RBSOA; VGE = ±15 V; RG = 82 W L = 100 µH; V
CEmax
clamped induct. load
= V
- LS·di/dt
CES
TVJ = 125°C
VCE = 720 V; VGE = ±15 V; TVJ = 125°C
= 82 W; non-repetitive
R
G
45 40
290
60
1.2
1.1
20 A
10 µs
ns ns ns
ns mJ mJ
(per IGBT) 1.35 K/W
(per IGBT) 0.45 K/W
V V
A A
V
Brake Chopper D7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
RRM
I
F25
I
F80
V
F
max. repetitive reverse voltage
forward current
forward voltage
TVJ = 150°C 1200 V
TC = 25°C TC = 80°C
IF = 15 A; VGE = 0 V TVJ = 25°C
15 10
3.5 V
TVJ = 125°C 2.0
I
R
reverse current
VR = V
TVJ = 25°C
RRM
0.06 mA
TVJ = 125°C 0.2
I
RM
t
rr
R
thJC
R
thCH
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
max. reverse recovery current reverse recovery time
thermal resistance junction to case
thermal resistance case to heatsink
VR = 600 V; IF = 10 A diF /dt = -400 A/µs TVJ = 125°C
13
110
(per diode) 2.5 K/W
(per diode) 0.85 K/W
TC = 25°C unless otherwise stated
20071113a
3 - 9
A A
V
mA
A
ns
MUBW30-12E6K
I
V
0
R
0
Input Rectifier Bridge D8 - D13
Symbol
V
RRM
I
FAV
I
DAVM
I
FSM
P
tot
Symbol Conditions Characteristic Values
V
F
I
R
R
thJC
R
thCH
Temperature Sensor NTC
Symbol Definitions Conditions min. typ. max. Unit
R
25
B
25/85
Definitions Conditions
max. repetitive reverse voltage
average forward current max. average DC output current max. surge forward current
total power dissipation
forward voltage
sine 180° TC = 80°C rectangular; d = 1/3; bridge TC = 80°C t = 10 ms; sine 50 Hz TC = 25°C
TC = 25°C
IF = 30 A TVJ = 25°C TVJ = 125°C
reverse current
thermal resistance junction to case
thermal resistance case to heatsink
resistance
VR = V
TVJ = 125°C 0.4
TVJ = 25°C
RRM
(per diode) TVJ = 25°C 1.4 K/W
(per diode) 0.45 K/W
TC = 25°C 4.45 4.7
Maximum Ratings
1600 V
31 89
320
80
min. typ. max.
1.0
1.35 V
1.1
0.02 mA
Ratings
5.0 kW
3510
W
mA
A A A
V
K
Module
Ratings
Symbol Definitions Conditions min. typ. max. Unit
T
VJ
T
VJM
T
stg
V
ISOL
M
d
d
S
d
A
Weight
operating temperature max. virtual junction temperature storage temperature
isolation voltage
mounting torque
creep distance on surface strike distance through air
-40
-40
I
< 1 mA; 50/60 Hz 2500 V~
ISOL
125 150 125
°C
°C
°C
(M4) 2.0 2.2 Nm
12.7
12.7
mm mm
40 g
Equivalent Circuits for Simulation
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
0
R
0
V
0
R
0
V
0
R
0
V
0
R
0
V
0
R
0
rectifier diode
IGBT
D8 - D13 TVJ = 125°C 0.90
T1 - T6 TVJ = 125°C 1.10
90
free wheeling diode
D1 - D6 TVJ = 125°C 1.5
14
IGBT T7 TVJ = 125°C 1.5
120
free wheeling diode D7 TVJ = 125°C 1.46
63
TC = 25°C unless otherwise stated
9
mW
mW
mW
mW
mW
V
V
V
V
V
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20071113a
4 - 9
MUBW30-12E6K
Outline Drawing Dimensions in mm (1 mm = 0.0394“)
Product Marking
Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code
Standard MUBW 30-12E6K MUBW30-12E6K Box 10 499 323
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20071113a
5 - 9
MUBW30-12E6K
0.001 0.01 0.1 1
0
50
100
150
200
2 3 4 5 6 7 8 91 10
10
2
10
3
0.0 0.6 1.2 1.8 2.4
0
20
40
60
80
0 20 40 60 80
0
40
80
120
160
0 20 40 60 80 100 120 140
0.001 0.01 0.1 1 10
0.0
0.4
0.8
1.2
1.6
I2t
I
FSM
I
F
A
V
F
t
s
t
ms
P
tot
W
I
D(AV)M
A
T
amb
t
s
K/W
A
2
s
0 20 40 60 80 100 120 140
0
20
40
60
80
100
I
D(AV)
T
C
A
V
A
C
C
Z
thJC
T
VJ
= 125°C
T
VJ
= 25°C
TVJ= 45°C
TVJ= 150°C
50Hz, 80% V
RRM
TVJ= 45°C
TVJ= 150°C
R
thA
:
0.2 K/W
0.5 K/W
0.8 K/W
1.5 K/W 3 K/W 5 K/W 8 K/W
MUBW30 -1 2E6K
Input Rectifier Bridge D8 - D13
Fig. 1 Forward current versus voltage drop per diode
Fig. 4 Power dissipation versus direct output current and ambient temper
ature, sin 180°Fig.
Fig. 2 Surge overload current Fig. 3 I
Fig. 5 Max. forward current vs. case temperature
2
t versus time per diode
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20071113a
6 - 9
0 200 400 600 800 1000
0
10
20
30
40
50
0
50
100
150
200
250
0 1 2 3 4 5 6
0
20
40
60
80
0 20 40 60 80 100
0
3
6
9
12
15
0 1 2 3 4 5 6
0
10
20
30
40
50
60
V
CE
V
I
C
V
CE
A
I
C
V
nC
Q
G
-di/dt
V
V
GE
I
RM
t
rr
A/Ps
MUBW 30-12E6K
I
RM
t
rr
11 V
A
11 V
0 5 10 15 20
0
20
40
60
80
V
V
GE
A
I
C
0 1 2 3 4
0
10
20
30
40
50
V
V
F
I
F
A
ns
9 V
13 V
13 V
15 V
TVJ = 25°C
TVJ = 125°C
VCE = 20 V
TVJ = 125°C TVJ = 25°C
TVJ = 125°C V
R
= 600 V
I
F
= 15 A
TVJ = 25°C
VGE= 17 V
A
VGE= 17 V
TVJ = 125°C
VCE = 600 V I
C
= 20 A
15 V
9 V
Output Inverter T1 - T6 / D1 - D6
MUBW30-12E6K
Fig. 7 Typ. output characteristics Fig. 8 Typ. output characteristics
Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics of
free wheeling diode
Fig. 11 Typ. turn on gate charge Fig. 12 Typ. turn off char. of free wheeling diode
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20071113a
7 - 9
0 10 20 30 40
0
4
8
12
16
20
0
50
100
150
200
250
0 10 20 30 40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
50
100
150
200
250
300
350
400
0.00001 0.0001 0.001 0.01 0.1 1 10
0.0001
0.001
0.01
0.1
1
10
0 50 100 150 200 250
0.0
0.5
1.0
1.5
2.0
2.5
0
250
500
750
1000
1250
0 50 100 150 200 250
0
2
4
6
8
10
single pulse
0 200 400 600 800 1000 1200
0
10
20
30
40
50
E
off
t
d(off)
t
f
E
on
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
:
R
G
:
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
I
CM
K/W
Z
thJC
IGBT
diode
V
A
mJ n
s
t
d(on)
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 20 A
T
VJ
= 125°C
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 20 A
T
VJ
= 125°C
VCE = 600 V V
GE
= ±15 V
R
G
= 68 :
T
VJ
= 125°C
VCE = 600 V V
GE
= ±15 V
R
G
= 68 :
T
VJ
= 125°C
RG = 68 : T
VJ
= 125°C
mJ
ns
Output Inverter T1 - T6 / D1 - D6
MUBW30-12E6K
Fig. 13 Typ. turn on energy and switching times versus collector current
Fig. 15 Typ. turn on energy versus gate resistor Fig.16 Typ. turn off energy and switching
Fig. 14 Typ. turn off energy and switching times versus collector current
times versus gate resistor
IXYS reserves the right to change limits, test conditions and dimensions.
Fig. 17 Reverse biased safe operating area Fig. 18 Typ. transient thermal impedance
© 2007 IXYS All rights reserved
20071113a
8 - 9
0 1 2 3 4 5 6
0
5
10
15
20
25
V
V
CE
A
I
C
0 1 2 3 4
0
5
10
15
20
25
30
V
V
F
I
F
A
0 5 10 15 20
0
1
2
3
4
0
100
200
300
400
E
off
t
d(off)
t
f
I
C
A
E
off
t
mJ
ns
0 20 40 60 80 100 120
0.0
0.4
0.8
1.2
0
200
400
600
VCE = 600V V
GE
= ±15V
I
C
= 20A
T
VJ
= 125°C
E
off
t
d(off)
t
f
:
E
off
t
ns
mJ
0.001 0.01 0.1 1 10
0.01
0.1
1
10
single pulse
t
s
K/W
Z
thJC
0 25 50 75 100 125 150
100
1000
10000
T
C
:
R
R
G
VCE = 600V V
GE
= ±15V
R
G
= 82:
T
VJ
= 125°C
IGBT
diode
TVJ = 25°C
TVJ = 125°C
VGE = 15V
TVJ = 125°C
TVJ = 25°C
Brake Chopper T7 / D7
MUBW30-12E6K
Fig. 19 Typ. output characteristics Fig. 20 Typ. forward characteristics
Fig. 21 Typ. turn off energy and switching times versus collector current
of free wheeling diode
Fig. 22 Typ. turn off energy and switching times versus gate resistor
Fig. 23 Typ. transient thermal impedance Fig. 24 Typ. thermistor resistance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
versus temperature
20071113a
9 - 9
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