IXYS MUBW30-12E6K Data Sheet
MUBW30-12E6K
E72873
Converter - Brake - Inverter
Module (CBI 1)
SPT IGBT
Part name (Marking on product)
MUBW30-12E6K
Three Phase
Rectifier
V
= 1600 V V
RRM
= 130 A I
I
DAVM25
= 300 A V
I
FSM
Brake
Chopper
= 1200 V V
CES
= 19 A I
C25
= 2.9 V V
CE(sat)
Three Phase
Inverter
= 1200 V
CES
= 29 A
C25
= 2.9 V
CE(sat)
Features:
• High le
power semiconductor module required
for the whole drive
• Inverter with SPT IGBTs
- low saturation voltage
- positive temper
- fast switching
- short tail current
• Epitaxial free wheeling diodes with
hiperfast and soft reverse recovery
• Industry standard package with insu
lated copper base plate and soldering
pins for PCB mounting
• Temperature sense included
vel of integration - only one
ature coefficient
Application:
AC motor drives with
• Input from single or three phase g
• Three phase synchronous or
asynchronous motor
• Electric braking operation
rid
Pin configuration see outlines.
Package:
• UL registered
•
Industry standard E1-pack
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20071113a
1 - 9
MUBW30-12E6K
Ouput Inverter T1 - T6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
C
ies
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
I
CM
t
SC
(SCSOA)
R
thJC
R
thCH
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
TVJ = 25°C to 150°C 1200 V
continuous
transient
TC = 25°C
TC = 80°C
±20
±30
30
21
TC = 25°C 130 W
IC = 30 A; VGE = 15 V TVJ = 25°C
TVJ = 125°C
3.1
3.8
3.6 V
IC = 0.6 mA; VGE = VCE TVJ = 25°C 4.5 6.5 V
VCE = V
TVJ = 125°C 0.6
; VGE = 0 V TVJ = 25°C
CES
1 mA
mA
VCE = 0 V; VGE = ±20 V 200 nA
VCE = 25 V; VGE = 0 V; f = 1 MHz 1180 pF
VCE = 600 V; VGE = 15 V; IC = 20 A 100 nC
inductive load TVJ = 125°C
= 600 V; IC = 20 A
V
CE
VGE = ±15 V; RG = 68 W
RBSOA; VGE = ±15 V; RG = 68 W
L = 100 µH;
V
CEmax
clamped induct. load
= V
- LS·di/dt
CES
TVJ = 125°C
VCE = 900 V; VGE = ±15 V; TVJ = 125°C
210
110
320
1
80
4.1
1.5
45 A
10 µs
ns
ns
ns
ns
mJ
mJ
RG = 68 W; non-repetitive
(per IGBT) 0.95 K/W
(per IGBT) 0.35 K/W
V
V
A
A
V
Output Inverter D1 - D6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
RRM
I
F25
I
F80
V
F
max. repetitve reverse voltage
forward current
forward voltage
TVJ = 150°C 1200 V
TC = 25°C
TC = 80°C
IF = 30 A; VGE = 0 V TVJ = 25°C
49
32
2.9 V
TVJ = 125°C 2.0
I
RM
t
rr
E
rec(off)
R
thJC
R
thCH
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
VR = 600 V
diF /dt = -500 A/µs TVJ = 125°C
= 30 A; VGE = 0 V
IF
27
150
tbd
(per diode) 0.9 K/W
(per diode) 0.3 K/W
TC = 25°C unless otherwise stated
20071113a
2 - 9
A
A
V
A
ns
µJ
MUBW30-12E6K
Brake Chopper T7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
C
ies
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
I
CM
t
SC
(SCSOA)
R
thJC
R
thCH
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
TVJ = 25°C to 150°C 1200 V
continuous
transient
TC = 25°C
TC = 80°C
±20
±30
19
13
TC = 25°C 90 W
IC = 15 A; VGE = 15 V TVJ = 25°C
TVJ = 125°C
2.9
3.5
3.4 V
IC = 0.4 mA; VGE = VCE TVJ = 25°C 4.5 6.5 V
VCE = V
TVJ = 125°C 0.8
; VGE = 0 V TVJ = 25°C
CES
0.5 mA
mA
VCE = 0 V; VGE = ±20 V 100 nA
VCE = 25 V; VGE = 0 V; f = 1 MHz 600 pF
VCE = 600 V; VGE = 15 V; IC = 10 A 45 nC
inductive load TVJ = 125°C
VCE = 600 V; IC = 10 A
VGE = ±15 V; RG = 82 W
RBSOA; VGE = ±15 V; RG = 82 W
L = 100 µH;
V
CEmax
clamped induct. load
= V
- LS·di/dt
CES
TVJ = 125°C
VCE = 720 V; VGE = ±15 V; TVJ = 125°C
= 82 W; non-repetitive
R
G
45
40
290
60
1.2
1.1
20 A
10 µs
ns
ns
ns
ns
mJ
mJ
(per IGBT) 1.35 K/W
(per IGBT) 0.45 K/W
V
V
A
A
V
Brake Chopper D7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
RRM
I
F25
I
F80
V
F
max. repetitive reverse voltage
forward current
forward voltage
TVJ = 150°C 1200 V
TC = 25°C
TC = 80°C
IF = 15 A; VGE = 0 V TVJ = 25°C
15
10
3.5 V
TVJ = 125°C 2.0
I
R
reverse current
VR = V
TVJ = 25°C
RRM
0.06 mA
TVJ = 125°C 0.2
I
RM
t
rr
R
thJC
R
thCH
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
max. reverse recovery current
reverse recovery time
thermal resistance junction to case
thermal resistance case to heatsink
VR = 600 V; IF = 10 A
diF /dt = -400 A/µs TVJ = 125°C
13
110
(per diode) 2.5 K/W
(per diode) 0.85 K/W
TC = 25°C unless otherwise stated
20071113a
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A
A
V
mA
A
ns
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