IXYS MUBW25-06A6K Data Sheet

MUBW25-06A6K

E72873

Converter - Brake - Inverter
Module (CBI 1)

NPT IGBT

Preliminary data

Part name (Marking on product)

MUBW25-06A6K

Three Phase

Rectifier

V

= 1600 V V

RRM

I

= 95 A I

DAVM25

I

= 250 A V

FSM

Brake

Chopper

= 600 V V

CES

= 12 A I

C25

= 2.0 V V

CE(sat)

Three Phase

Inverter

= 600 V

CES

= 31 A

C25

= 2.1 V

CE(sat)

Features:

• High level of integration - only one
power semiconductor module required
for the whole drive

• Inverter with NPT IGBTs

- low saturation voltage

- positive temperature coefficient

- fast switching

- short tail current

• Epitaxial free wheeling diodes with

hiperfast and soft reverse recovery

• Industry standard package with insu
lated copper base plate and soldering
pins for PCB mounting

• Temperature sense included

Application:

AC motor drives with

• Input from single or three phase grid

• Three phase synchronous or
asynchronous motor

• Electric braking operation

Pin configuration see outlines.

Package:

• UL registered

• Industry standard E1-pack

IXYS reserves the right to change limits, test conditions and dimensions.

© 2007 IXYS All rights reserved

20071113a

1 - 5

MUBW25-06A6K

Ouput Inverter T1 - T6

Ratings

Symbol Definitions Conditions min. typ. max. Unit

V

CES

V

GES

V

GEM

I

C25

I

C80

P

tot

V

CE(sat)

V

GE(th)

I

CES

I

GES

C

ies

Q

G(on)

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

I

CM

t

SC

(SCSOA)

R

thJC

R

thCH

collector emitter voltage

max. DC gate voltage
max. transient collector gate voltage

collector current

total power dissipation

collector emitter saturation voltage

gate emitter threshold voltage

collector emitter leakage current

gate emitter leakage current

input capacitance

total gate charge

turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse

reverse bias safe operating area

short circuit safe operating area

thermal resistance junction to case

thermal resistance case to heatsink

TVJ = 25°C to 150°C 600 V

continuous
transient

TC = 25°C
TC = 80°C

±20
±30

31
21

TC = 25°C 100 W

IC = 20 A; VGE = 15 V TVJ = 25°C
TVJ = 125°C

2.1

2.3

2.4 V

IC = 0.5 mA; VGE = VCE TVJ = 25°C 4.5 6.5 V

VCE = V
TVJ = 125°C 1.3

; VGE = 0 V TVJ = 25°C

CES

0.6 mA
mA

VCE = 0 V; VGE = ±20 V 100 nA

VCE = 25 V; VGE = 0 V; f = 1 MHz 1100 pF

VCE = 300 V; VGE = 15 V; IC = 20 A 65 nC

inductive load TVJ = 125°C
VCE = 300 V; IC = 20 A
VGE = ±15 V; RG = 47 W

RBSOA; VGE = ±15 V; RG = 47 W
L = 100 µH;
V

CEmax

clamped induct. load

= V

- LS·di/dt

CES

TVJ = 125°C

VCE = 600 V; VGE = ±15 V; TVJ = 125°C

50
60

300

30

0.95

0.7

40 A

10 µs

ns
ns
ns

ns
mJ
mJ

RG = 47 W; non-repetitive

(per IGBT) 1.25 K/W

(per IGBT) 0.45 K/W

V
V

A
A

V

Output Inverter D1 - D6

Ratings

Symbol Definitions Conditions min. typ. max. Unit

V

RRM

I

F25

I

F80

V

F

I

RM

t

rr

E

rec(off)

R

thJC

R

thCH

IXYS reserves the right to change limits, test conditions and dimensions.

© 2007 IXYS All rights reserved

max. repetitve reverse voltage

forward current

forward voltage

max. reverse recovery current
reverse recovery time
reverse recovery energy

thermal resistance junction to case

thermal resistance case to heatsink

TVJ = 150°C 600 V

TC = 25°C
TC = 80°C

IF = 20 A; VGE = 0 V TVJ = 25°C
T

= 125°C 1.6

VJ

VR = 300 V
diF /dt = -400 A/µs TVJ = 100°C

= 20 A; VGE = 0 V

IF

14
90

tbd

36
24

2.2 V

(per diode) 1.6 K/W

(per diode) 0.55 K/W

TC = 25°C unless otherwise stated

20071113a

2 - 5

A
A

V

A
ns
µJ