Page 1
MUBW25-06A6K
E72873
Converter - Brake - Inverter
Module (CBI 1)
NPT IGBT
Preliminary data
Part name (Marking on product)
MUBW25-06A6K
Three Phase
Rectifier
V
= 1600 V V
RRM
I
= 95 A I
DAVM25
I
= 250 A V
FSM
Brake
Chopper
= 600 V V
CES
= 12 A I
C25
= 2.0 V V
CE(sat)
Three Phase
Inverter
= 600 V
CES
= 31 A
C25
= 2.1 V
CE(sat)
Features:
• High level of integration - only one
power semiconductor module required
for the whole drive
• Inverter with NPT IGBTs
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current
• Epitaxial free wheeling diodes with
hiperfast and soft reverse recovery
• Industry standard package with insu
lated copper base plate and soldering
pins for PCB mounting
• Temperature sense included
Application:
AC motor drives with
• Input from single or three phase grid
• Three phase synchronous or
asynchronous motor
• Electric braking operation
Pin configuration see outlines.
Package:
• UL registered
• Industry standard E1-pack
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20071113a
1 - 5
Page 2
MUBW25-06A6K
Ouput Inverter T1 - T6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
C
ies
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
I
CM
t
SC
(SCSOA)
R
thJC
R
thCH
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
TVJ = 25°C to 150°C 600 V
continuous
transient
TC = 25°C
TC = 80°C
±20
±30
31
21
TC = 25°C 100 W
IC = 20 A; VGE = 15 V TVJ = 25°C
TVJ = 125°C
2.1
2.3
2.4 V
IC = 0.5 mA; VGE = VCE TVJ = 25°C 4.5 6.5 V
VCE = V
TVJ = 125°C 1.3
; VGE = 0 V TVJ = 25°C
CES
0.6 mA
mA
VCE = 0 V; VGE = ±20 V 100 nA
VCE = 25 V; VGE = 0 V; f = 1 MHz 1100 pF
VCE = 300 V; VGE = 15 V; IC = 20 A 65 nC
inductive load TVJ = 125°C
VCE = 300 V; IC = 20 A
VGE = ±15 V; RG = 47 W
RBSOA; VGE = ±15 V; RG = 47 W
L = 100 µH;
V
CEmax
clamped induct. load
= V
- LS·di/dt
CES
TVJ = 125°C
VCE = 600 V; VGE = ±15 V; TVJ = 125°C
50
60
300
30
0.95
0.7
40 A
10 µs
ns
ns
ns
ns
mJ
mJ
RG = 47 W; non-repetitive
(per IGBT) 1.25 K/W
(per IGBT) 0.45 K/W
V
V
A
A
V
Output Inverter D1 - D6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
RRM
I
F25
I
F80
V
F
I
RM
t
rr
E
rec(off)
R
thJC
R
thCH
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
max. repetitve reverse voltage
forward current
forward voltage
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
TVJ = 150°C 600 V
TC = 25°C
TC = 80°C
IF = 20 A; VGE = 0 V TVJ = 25°C
T
= 125°C 1.6
VJ
VR = 300 V
diF /dt = -400 A/µs TVJ = 100°C
= 20 A; VGE = 0 V
IF
14
90
tbd
36
24
2.2 V
(per diode) 1.6 K/W
(per diode) 0.55 K/W
TC = 25°C unless otherwise stated
20071113a
2 - 5
A
A
V
A
ns
µJ
Page 3
MUBW25-06A6K
Brake Chopper T7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
C
ies
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
I
CM
t
SC
(SCSOA)
R
thJC
R
thCH
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
TVJ = 25°C to 150°C 600 V
continuous
transient
TC = 25°C
TC = 80°C
±20
±30
19
14
TC = 25°C 75 W
IC = 10 A; VGE = 15 V TVJ = 25°C
TVJ = 125°C
2.0
2.25
2.35 V
IC = 0.35 mA; VGE = VCE TVJ = 25°C 3 5 V
VCE = V
TVJ = 125°C 0.8
; VGE = 0 V TVJ = 25°C
CES
0.5 mA
mA
VCE = 0 V; VGE = ±20 V 100 nA
VCE = 25 V; VGE = 0 V; f = 1 MHz 600 pF
VCE = 300 V; VGE = 15 V; IC = 10 A 39 nC
inductive load TVJ = 125°C
VCE = 300 V; IC = 10 A
VGE = ±15 V; RG = 82 W
RBSOA; VGE = ±15 V; RG = 82 W
L = 100 µH;
V
CEmax
clamped induct. load
= V
- LS·di/dt
CES
TVJ = 125°C
VCE = 600 V; VGE = ±15 V; TVJ = 125°C
35
40
230
30
0.4
0.3
20 A
10
ns
ns
ns
ns
mJ
mJ
µs
RG = 82 W; non-repetitive
(per IGBT) 1.7 K/W
(per IGBT) 0.55 K/W
V
V
A
A
V
Brake Chopper D7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
RRM
I
F25
I
F80
V
F
max. repetitive reverse voltage
forward current
forward voltage
TVJ = 150°C 600 V
TC = 25°C
TC = 80°C
IF = 10 A; VGE = 0 V TVJ = 25°C
21
14
2.1 V
TVJ = 125°C 1.4
I
R
reverse current
VR = V
TVJ = 25°C
RRM
0.06 mA
TVJ = 125°C 0.2
I
RM
t
rr
R
thJC
R
thCH
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
max. reverse recovery current
reverse recovery time
thermal resistance junction to case
thermal resistance case to heatsink
VR = 300 V; IF = 10 A
diF /dt = -400 A/µs TVJ = 100°C
12
85
(per diode) 2.5 K/W
(per diode) 0.85 K/W
TC = 25°C unless otherwise stated
20071113a
3 - 5
A
A
V
mA
A
ns
Page 4
MUBW25-06A6K
I
V
0
R
0
Input Rectifier Bridge D8 - D13
Symbol
V
RRM
I
FAV
I
DAVM
I
FSM
P
tot
Symbol Conditions Characteristic Values
V
F
I
R
R
thJC
R
thCH
Temperature Sensor NTC
Symbol Definitions Conditions min. typ. max. Unit
R
25
B
25/85
Definitions Conditions
max. repetitive reverse voltage
average forward current
max. average DC output current
max. surge forward current
total power dissipation
forward voltage
sine 180° TC = 80°C
rectangular; d = 1/3; bridge TC = 80°C
t = 10 ms; sine 50 Hz TC = 25°C
TC = 25°C
IF = 30 A TVJ = 25°C
TVJ = 125°C
reverse current
thermal resistance junction to case
thermal resistance case to heatsink
resistance
VR = V
TVJ = 125°C 0.4
TVJ = 25°C
RRM
(per diode) TVJ = 25°C 1.9 K/W
(per diode) 0.65 K/W
TC = 25°C 4.45 4.7
Maximum Ratings
1600 V
23
65
250
65
min. typ. max.
1.1
1.45 V
1.2
0.02 mA
Ratings
5.0
3510
W
mA
kW
A
A
A
V
K
Module
Ratings
Symbol Definitions Conditions min. typ. max. Unit
T
VJ
T
VJM
T
stg
V
ISOL
M
d
d
S
d
A
Weight
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
mounting torque
creep distance on surface
strike distance through air
-40
-40
I
< 1 mA; 50/60 Hz 2500 V~
ISOL
125
150
125
°C
°C
°C
(M4) 2.0 2.2 Nm
12.7
12.7
mm
mm
40 g
Equivalent Circuits for Simulation
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
0
R
0
V
0
R
0
V
0
R
0
V
0
R
0
V
0
R
0
rectifier diode
D8 - D13 TVJ = 125°C 0.90
12
IGBT
T1 - T6 TVJ = 125°C 1.0
50
free wheeling diode
D1 - D6 TVJ = 125°C 1.25
13
IGBT T7 TVJ = 125°C 1.0
110
free wheeling diode D7 TVJ = 125°C 1.25
26
TC = 25°C unless otherwise stated
mW
mW
mW
mW
mW
V
V
V
V
V
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20071113a
4 - 5
Page 5
MUBW25-06A6K
Outline Drawing Dimensions in mm (1 mm = 0.0394“)
Product Marking
Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code
Standard MUBW 25-06A6K MUBW25-06A6K Box 10 500 110
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20071113a
5 - 5
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