IXYS MUBW25-06A6 Datasheet
© 2000 IXYS All rights reserved
1 - 8
Rectifier Brake Inverter
V
RRM
= 1200V V
CES
= 600 V V
CES
= 600 V
I
FAVM
= 11 A I
C25
= 18 A I
C25
= 27.5 A
I
FSM
= 250 A V
CE(sat)
= 2.1 V V
CE(sat)
= 2.1 V
MUBW 25-06 A6
Converter - Brake - Inverter Module (CBI1)
Features
●
NPT IGBT technology
Square RBSOA, no latchup
●
Free wheeling diodes with Hiperfast
and soft recovery behaviour
●
Isolation voltage 2500 V~
●
Built in temperature sense
●
High level of integration:
one module for complete drive
system
●
Direct Copper Bonded Al2O3 ceramic
base plate
Applications
●
AC motor control
●
AC servo and robot drives
Advantages
●
No need of external isolation
●
Easy to mount with two screws
●
Package designed for wave
soldering
●
High temperature and power cycling
capability
Input Rectifier Bridge D8 - D13
Symbol Conditions Maximum Ratings
V
RRM
1200 V
I
F
TVJ = 25°C 36 A
I
FAVM
TVJ = 150°C; TK = 70°C 11 A
I
FSM
TVJ = 45°C; t = 10 ms sine 50 Hz 250 A
i²t TVJ = 125°C 310 A²s
T
VJ
+150 °C
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
I
R
V
RRM
= 1200 V; TVJ = 25°C 10 µA
TVJ = 125°C 3 mA
V
F
IF = 36 A 1.15 1.4 V
R
thJC
per die 1.4 °C/W
031
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
2 - 8
Output Inverter T1 - T6, D1 - D6
Symbol Conditions Maximum Ratings
V
CES
TVJ = 25°C 600 V
V
CGR
TVJ = 25°C; RGE = 20kW 600 V
V
GE
TVJ = 25°C
±
20 V
I
C
TC = 25°C 27.5 A
TC = 90°C 16 A
I
CM
tp = 1 ms = 1% duty cycle; TC = 25°C 55 A
TC = 90°C 32 A
t
SC
IGBT VCE = 600 V; TVJ = 125°C
non-repetitive 10 µs
P
tot
TC = 25°C 77 W
T
VJ
Free-Wheeling Diode +150 °C
T
VJ
IGBT +150 °C
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
I
CES
VGE = 0 V; VCE = 600 V 1 mA
I
GES
VCE = 0 V; VGE = 25 V 100 nA
V
GE(th)
VGE = VCE; IC = 0.5 mA 4.5 5.5 6.5 V
V
(BR)CES
VGE = 0 V; IC = 10 mA; TVJ = -40°C 600 V
V
CE(sat)
VGE = 15 V; IC = 20 A; TVJ = 25°C 2.1 2.5 V
TVJ = 125°C 2.4 2.8 V
t
f
30 ns
t
r
35 ns
t
d(on)
30 ns
t
d(off)
200 ns
E
off
0.6 mJ
E
on
0.75 mJ
C
iss
1100 pF
C
oss
120 pF
C
rss
72 pF
g
fs
VCE = 20 V; IC = 20 A 5.5 S
Q
g
VCC = 300 V; IC = 20 A pulse; VGE = 15 V 63 nC
V
F
IF = 20 A; VGE = 0 V; TVJ = 25°C 2 V
TVJ = 125°C 1.8 V
t
rr
IF = 20 A; VR = -300 V; VGE = 0 V 0.3 µs
diF/dt = -600 A/µs; TVJ = 125°C
Q
r
IF = 20 A; VR = -300 V; TVJ = 25°C 0. 6 µC
diF/dt = -600 A/µs; VGE= 0 V; TVJ = 125°C 1.7 µC
I
r
250 µA
R
thJC
IGBT (per die) 1.35 °C/W
Diode (per die) 1.7 °C/W
Inductive load, T
VJ
= 125°C
VCC = 300 V; IC = 20 A
RG = 47 W; VGE = ±15 V
VGE = 0 V
VCE = 25 V
f = 1 MHz
MUBW 25-06 A6
© 2000 IXYS All rights reserved
3 - 8
MUBW 25-06 A6
Brake Chopper T7, D7
Symbol Conditions Maximum Ratings
V
CES
TVJ = 25°C 600 V
V
CGR
TVJ = 25°C; RGE = 20kW 600 V
V
GE
TVJ = 25°C
±
20 V
I
C
TC = 25°C 18 A
TC = 90°C 10 A
I
CM
tp = 1 ms = 1% duty cycle; TC = 25°C 36 A
TC = 50°C 20 A
t
SC
IGBT VCE = 600 V; TVJ = 125°C
non-repetitive 10 µs
P
tot
TC = 25°C 61 W
T
VJ
Free-Wheeling Diode +150 °C
T
VJ
IGBT +150 °C
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
I
CES
VGE = 0 V; VCE = 600 V 1 mA
I
GES
VCE = 0 V; VGE = 25 V 100 nA
V
GE(th)
VGE = VCE; IC = 0.35 mA 4.5 5.5 6.5 V
V
(BR)CES
VGE = 0 V; IC = 10 mA; TVJ = -40°C 600 V
V
CE(sat)
VGE = 15 V; IC = 10 A;TVJ = 25°C 2.1 2.5 V
TVJ = 125°C 2.4 2.8 V
t
f
25 ns
t
r
25 ns
t
d(on)
35 ns
t
d(off)
250 ns
E
off
0.38 mJ
E
on
0.58 mJ
C
iss
570 pF
C
oss
80 pF
C
rss
55 pF
g
fs
VCE = 20 V; IC = 10 A 3 S
Q
g
VCC = 300 V; IC = 10 A pulse; VGE = 15 V 39 nC
V
F
IF = 10 A; VGE = 0 V; TVJ = 25°C 2 V
TVJ = 125°C 1.8 V
t
rr
IF = 10 A; VR = -300 V; VGE = 0 V 0.2 µs
diF/dt = -350 A/µs; TVJ = 100°C
Q
r
IF = 10 A; VR = -300 V; TVJ = 25°C 0.3 µC
diF/dt = -350 A/µs; VGE= 0 V; TVJ = 125°C 0.9 µC
I
r
250 µA
R
thJC
IGBT (per die) 1.7 °C/W
Diode (per die) 2.3 °C/W
Inductive load, T
VJ
= 125°C
VCC = 300 V; IC = 10 A
RG = 100 W; VGE = ±15 V
VGE = 0 V
VCE = 25 V
f = 1 MHz
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