© 2001 IXYS All rights reserved
2 - 8
MUBW 15-06 A7
Output Inverter T1 - T6
Symbol Conditions Maximum Ratings
V
CES
TVJ = 25°C to 150°C 600 V
V
GES
Continuous
±
20 V
V
GEM
Transient
±
30 V
I
C25
TC = 25°C25A
I
C80
TC = 80°C18A
RBSOA VGE = ±15 V; RG = 68 Ω; TVJ = 125°CI
CM
= 30 A
Clamped inductive load; L = 100 µH V
CEK
≤ V
CES
t
SC
V
CE
= V
CES
; VGE = ±15 V; RG = 68 Ω; TVJ = 125°C10µs
(SCSOA) non-repetitive
P
tot
TC = 25°C 100 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
IC = 15 A; VGE = 15 V; TVJ = 25°C 1.9 2.3 V
TVJ = 125°C 2.2 V
V
GE(th)
IC = 0.4 mA; VGE = V
CE
4.5 6.5 V
I
CES
V
CE
= V
CES; VGE
= 0 V; TVJ = 25°C 0.6 mA
TVJ = 125°C 0.4 mA
I
GES
VCE = 0 V; VGE = ± 20 V 200 nA
t
d(on)
30 ns
t
r
45 ns
t
d(off)
270 ns
t
f
40 ns
E
on
0.7 mJ
E
off
0.5 mJ
C
ies
VCE = 25 V; VGE = 0 V; f = 1 MHz 800 pF
Q
Gon
VCE= 300V; VGE = 15 V; IC = 15 A 57 nC
R
thJC
(per IGBT) 1.3 K/W
Inductive load, T
VJ
= 125°C
VCE = 300 V; IC = 15 A
VGE = ±15 V; RG = 68 Ω
Output Inverter D1 - D6
Symbol Conditions Maximum Ratings
I
F25
TC = 25°C35A
I
F80
TC = 80°C24A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
IF = 15 A; VGE = 0 V; TVJ = 25°C 2.0 V
TVJ = 125°C 1.3 V
I
RM
IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C13A
t
rr
VR = 300 V; VGE = 0 V 90 ns
R
thJC
(per diode) 2.1 K/W
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at TJ = 125°C)
V0 = 1.18 V; R0 = 15 m
Ω
T1 - T6 / D1 - D6
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 0.99 V; R0 = 81 m
Ω
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.09V; R0 = 12 m
Ω
T7 / D7
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 0.89 V; R0 = 122 m
Ω
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.07 V; R0 = 23 m
Ω
Thermal Response
D11 - D16
Rectifier Diode (typ.)
C
th1
= 0.093 J/K; R
th1
= 1.212 K/W
C
th2
= 0.778 J/K; R
th2
= 0.258 K/W
T1 - T6 / D1 - D6
IGBT (typ.)
C
th1
= 0.077 J/K; R
th1
= 1.111 K/W
C
th2
= 0.732 J/K; R
th2
= 0.279 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.065 J/K; R
th1
= 1.766 K/W
C
th2
= 0.636 J/K; R
th2
= 0.344 K/W
T7 / D7
IGBT (typ.)
C
th1
= 0.071 J/K; R
th1
= 1.211 K/W
C
th2
= 0.726 J/K; R
th2
= 0.293 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.043 J/K; R
th1
= 2.738 K/W
C
th2
= 0.54 J/K; R
th2
= 0.462 K/W