IXYS MUBW100-06A8 Datasheet
© 2001 IXYS All rights reserved
B4
Advanced Technical Information
Converter - Brake - Inverter Module (CBI3)
Input Rectifier D11 - D16
Symbol Conditions Maximum Ratings
V
RRM
1600 V
I
FAV
TC = 80°C; sine 180° 65 A
I
DAVM
TC = 80°C; rectangular; d = 1/3; bridge 180 A
I
FSM
TVJ = 25°C; t = 10 ms; sine 50 Hz 850 A
P
tot
TC = 25°C 170 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
F
IF = 100 A; TVJ = 25°C 1.3 1.5 V
TVJ = 125°C 1.3 V
I
R
VR = V
RRM;
TVJ = 25°C 0.05 mA
TVJ = 125°C 1 mA
R
thJC
(per diode) 0.73 K/W
Three Phase Brake Chopper Three Phase
Rectifier Inverter
V
RRM
= 1600 V V
CES
= 600 V V
CES
= 600 V
I
FAVM
= 90 A I
C25
= 50 A I
C25
= 125 A
I
FSM
= 850 A V
CE(sat)
= 1.9 V V
CE(sat)
= 1.9 V
110
MUBW 100-06 A8
IXYS reserves the right to change limits, test conditions and dimensions.
Application: A C motor drives with
●
Input from single or three phase grid
●
Three phase synchronous or
asynchronous motor
●
electric braking operation
Features
●
High level of integration - only one power
semiconductor module required for the
whole drive
●
NPT IGBT technology with low
saturation voltage, low switching
losses, high RBSOA and short circuit
ruggedness
●
Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
●
Industry standard package with insulated
copper base plate and soldering pins for
PCB mounting
●
Temperature sense included
NTC
D11 D13 D15
D12
D14
D16
1
23
D7
T7
T1
D1
T3
D3
T2
T4
T6
T5
D4
D2
D6
D5
21
22
7
6
4
5
16
15
18
17
20
19
11
10
23
24
14
8
9
12 13
Revision A 07.03.2001
1 - 4
© 2001 IXYS All rights reserved
B4
MUBW 100-06 A8
Output Inverter T1 - T6
Symbol Conditions Maximum Ratings
V
CES
TVJ = 25°C to 150°C 600 V
V
GES
Continuous
±
20 V
I
C25
TC = 25°C 125 A
I
C80
TC = 80°C 85 A
RBSOA VGE = ±15 V; RG = 2.2 Ω; TVJ = 125°C I
CM
= 200 A
Clamped inductive load; L = 100 µH V
CEK
≤ V
CES
t
SC
V
CE
= V
CES
; VGE = ±15 V; RG = 2.2 Ω; TVJ = 125°C 10 µs
(SCSOA) non-repetitive
P
tot
TC = 25°C 410 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
IC = 100 A; VGE = 15 V; TVJ = 25°C 1.9 2.5 V
TVJ = 125°C 2.2 V
V
GE(th)
IC = 1.5 mA; VGE = V
CE
4.5 6.5 V
I
CES
V
CE
= V
CES; VGE
= 0 V; TVJ = 25°C 1.4 mA
TVJ = 125°C 1.5 mA
I
GES
VCE = 0 V; VGE = ± 20 V 400 nA
t
d(on)
25 ns
t
r
11 ns
t
d(off)
150 ns
t
f
30 ns
E
on
1.0 mJ
E
off
2.9 mJ
C
ies
VCE = 25 V; VGE = 0 V; f = 1 MHz 4.3 nF
Q
Gon
VCE= 300V; VGE = 15 V; IC = 100 A tbd nC
R
thJC
(per IGBT) 0.3 K/W
Inductive load, T
VJ
= 125°C
VCE = 300 V; IC = 100 A
VGE = ±15 V; RG = 2.2 Ω
Output Inverter D1 - D6
Symbol Conditions Maximum Ratings
I
F25
TC = 25°C 140 A
I
F80
TC = 80°C 85 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
IF = 60 A; VGE = 0 V; TVJ = 25°C 1.8 2.1 V
TVJ = 125°C 1.3 V
I
RM
IF = 60 A; diF/dt = -500 A/µs; TVJ = 125°C 28 A
t
rr
VR = 300 V; VGE = 0 V 100 ns
R
thJC
(per diode) 0.61 K/W
2 - 4
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