IXYS MLO36, MMO 36 Data Sheet
MLO 36
MMO 36
AC Controller Modules
V
RSMVRRM
V
DSMVDRM
Type
MLO
G1 K1
VV
1200 1200 MLO 36-12io1 MMO 36-12io1
1600 1600 MLO 36-16io1 MMO 36-16io1
K2
Symbol Test Conditions Maximum Ratings
I
RMS
I
TRMS
I
TAVM
I
TSM
TK = 85°C, 50 - 400 Hz (for single controller) 39 A
TVJ = T
VJM
TK = 85°C; (180° sine) 18 A
TVJ = 45°C; t = 10 ms (50 Hz), sine 360 A
VR = 0 t = 8.3 ms (60 Hz), sine 390 A
TVJ = T
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 350 A
t = 10 ms (50 Hz), sine 320 A
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 645 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 630 A2s
(di/dt)
(dv/dt)
P
GM
P
GAVM
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
TVJ = T
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 510 A2s
cr
TVJ = T
VJM
f =50 Hz, tP =200 ms
VD = 2/3 V
IG = 0.3 A non repetitive, IT = I
DRM
diG/dt = 0.3 A/ms
TVJ = T
cr
RGK = ¥; method 1 (linear voltage rise)
TVJ = T
= I
I
T
;V
VJM
VJM
TAVM
50/60 Hz, RMS t = 1 min 3000 V~
£ 1 mA t = 1 s 3600 V~
I
ISOL
Mounting torque (M3) 0.7 ± 0.1 Nm
t = 10 ms (50 Hz), sine 510 A2s
repetitive, IT = 150 A 100 A/ms
TAVM
= 2/3 V
DR
DRM
tp = 30 ms10W
tp = 300 ms5W
-40...+125 °C
-40...+125 °C
(UNF 4-32) 6 ± 0.9 lb.in.
Weight typ. 15 g
MMO
G1 K1
K2 G2
28 A
500 A/ms
1000 V/ms
0.5 W
10 V
125 °C
I
RMS
V
MMO 36
= 39 A
= 1200-1600 V
RRM
K1
G2
K2
G1
K1 = Cathode 1, G1 = Gate 1
K2 = Cathode 2, G2 = Gate 2
(MLO 36 has no G2 lead)
Features
●
Thyristor controller for AC (circuit
W1C acc. to IEC) for mains frequency
●
Direct copper bonded Al2O3 -ceramic
base plate
●
Isolation voltage 3600 V~
●
Planar passivated chips
●
UL registered, E 72873
●
Long wire leads suitable for PC board
soldering
Applications
●
Switching and control of single and
three phase AC
●
Softstart AC motor controller
●
Solid state switches
●
Light and temperature control
Advantages
●
Easy to mount with two screws
●
Space and weight savings
●
Improved temperature and power
cycling
●
High power density
Data according to IEC 60747 and to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1 - 3
MLO 36
MMO 36
Symbol Test Conditions Characteristic Values
, I
I
R
D
V
T
V
T0
r
T
V
GT
I
GT
I
GM
V
GD
I
GD
I
L
I
H
t
gd
t
q
R
thJC
R
thJK
d
S
d
A
a Max. allowable acceleration 50 m/s
TVJ= T
; VR = V
VJM
RRM
; VD = V
DRM
£ 5mA
IT= 45 A; TVJ = 25°C £ 1.49 V
For power-loss calculations only 0.85 V
15 mW
VD = 6 V; TVJ = 25°C £ 1.0 V
TVJ = -40°C £ 1.15 V
VD = 6 V; TVJ = 25°C £ 65 mA
TVJ = -40°C £ 120 mA
tp = 50 ms, f = 60 Hz, IT = I
TVJ = T
;V
VJM
D
= 2/3 V
TAVM
DRM
£ 0.2 V
£ 1mA
6A
TVJ = 25°C; tP = 10 ms, VD = 6 V £ 150 mA
IG = 0.3 A; diG/dt = 0.3 A/ms
TVJ = 25°C; VD = 6 V; RGK = ¥ £ 100 mA
TVJ = 25°C; VD = 1/2 V
IG = 0.3 A; diG/dt = 0.3 A/ms
TVJ = T
VR = 100 V; dv/dt = 10 V/ms; VD = 2/3 V
; IT = 11 A, tP = 200 ms; -di/dt = 10 A/ms typ. 150 ms
VJM
DRM
DRM
£ 2 ms
per thyristor/diode; DC current 1.3 K/W
per module 0.65 K/W
per thyristor/diode; DC current 1.5 K/W
per module 0.75 K/W
Creeping distance on surface 6 mm
Creepage distance in air 6 mm
10
1: I
, T
= 125°C
GT
VJ
, T
= 25°C
2: I
GT
V
V
G
1
0.1
VJ
, T
= -40°C
3: I
GT
VJ
2
1
I
, T
= 125°C
GD
VJ
1 10 100 1000
Fig. 1 Gate trigger characteristics
1000
µs
t
gd
100
2
10
typ.
3
Limit
4: P
5: P
6: P
6
5
4
= 0.5 W
GAV
= 1 W
GM
= 10 W
GM
mA
I
G
T
= 25°C
VJ
Dimensions in mm (1 mm = 0.0394")
MLO 36 MMO 36
1
10 100 1000
mA
I
G
Fig. 2 Gate trigger delay time
160
A
140
I
RMS
120
100
80
60
40
20
0
0.01 0.1 1 10
T
VJ
T
K
t
= 125°C
= 85°C
s
MMO 36
MLO 36
Fig. 3 Rated RMS current versus time
(360° conduction)
© 2000 IXYS All rights reserved
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