IXYS MMO175-16IO7, MLO175-16IO7, MLO175-08IO7, MLO175-14IO7, MMO175-08IO7 Datasheet
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© 2000 IXYS All rights reserved
1 - 2
I
RMS
= 175 A
V
RRM
= 800-1600 V
V
RSM
V
RRM
Type
V
DSM
V
DRM
VV
800 800 MMO 175-08io7 MLO 175-08io7
1200 1200 MMO 175-12io7 MLO 175-12io7
1600 1600 MMO 175-16io7 MLO 175-16io7
Features
• Thyristor controller for AC (circuit
W1C acc. to IEC) for mains frequency
• Isolation voltage 3000 V~
• Planar glass passivated chips
• Low forward voltage drop
• Lead suitable for PC board solering
Applications
• Switching and control of single and
three phase AC circuits
• Light and temperature control
• Softstart AC motor controller
• Solid state switches
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling
• High power density
• Small and light weight
MMO 175
MLO 175
Symbol Conditions Maximum Ratings
I
RMS
TC = 85°C, 50 - 400 Hz, (per single controller) 175 A
I
TRMS
125 A
I
TAVM
TC = 85°C; 180° sine 80 A
I
TSM
TVJ = 45°C t = 10 ms (50 Hz), sine 1500 A
VR = 0 t = 8.3 ms (60 Hz), sine 1600 A
TVJ = 125°C t = 10 ms (50 Hz), sine 1350 A
VR = 0 t = 8.3 ms (60 Hz), sine 1450 A
I
2
t TVJ = 45°C t = 10 ms (50 Hz), sine 11200 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 10750 A2s
TVJ = 125°C t = 10 ms (50 Hz), sine 9100 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 8830 A2s
(di/dt)
cr
TVJ = 125°C repetitive, IT = 80 A 150 A/µs
f = 50 Hz, tP = 200 µs
V
D
= 2/3 V
DRM
IG = 0.45 A non repetitive, IT = I
TAVM
500 A/µs
diG/dt = 0.45 A/µs
(dv/dt)
cr
TVJ = 125°C; VDR = 2/3 V
DRM
1000 V/µs
RGK = ¥; method 1 (linear voltage rise)
P
GM
TVJ = 125°C tp = 30 µs 10 W
IT = I
TAVM
tp = 300 µs 5 W
P
GAVM
0.5 W
V
RGM
10 V
T
VJ
-40...+150 °C
T
VJM
150 °C
T
stg
-40...+125 °C
V
ISOL
50/60 Hz, RMS t = 1 min 2500 V~
I
ISOL
£ 1 mA t = 1 s 3000 V~
M
d
Mounting torque (M4) 1.5...2.0/14...18 Nm/lb.in.
Weight typ. 18 g
Data according to IEC 60747 and to a single thyristor/diode unless otherwise stated.
I / H G / F
G / F
I / H
A
N
N
W1C
W1H
AC Controller Modules
Preliminary Data
008
© 2000 IXYS All rights reserved
2 - 2
Symbol Conditions Characteristic Values
ID , I
R
TVJ= 125°C; VR = V
RRM
; VD = V
DRM
£ 5mA
V
T
IT= 200 A; TVJ = 25°C £ 1.57 V
V
T0
For power-loss calculations only 0.85 V
r
T
3.7 mW
V
GT
VD = 6 V TVJ = 25°C £ 1.5 V
TVJ = -40°C £ 1.6 V
I
GT
VD = 6 V TVJ = 25°C £ 100 mA
TVJ = -40°C £ 200 mA
V
GD
TVJ = 125°C; VD = 2/3 V
DRM
£ 0.2 V
I
GD
£ 10 mA
I
L
TVJ = 25°C; tP = 10 µs £ 450 mA
IG = 0.45 A; diG/dt = 0.45 A/µs
I
H
TVJ = 25°C; VD = 6 V; RGK = ¥ £ 200 mA
t
gd
TVJ = 25°C; VD = ½ V
DRM
£ 2µs
IG = 0.45 A; diG/dt = 0.45 A/µs
R
thJC
per thyristor; DC 0.5 K/W
per module 0.25 K/W
R
thCH
per thyristor; sine 180° el typ. 0.12 K/W
per module typ. 0.06 K/W
d
S
Creeping distance on surface 11.2 mm
d
A
Creepage distance in air 17.0 mm
a Max. allowable acceleration 50 m/s
2
MMO 175
MLO 175
10 100 1000
1
10
100
1000
10
0
10
1
10
2
10
3
10
4
0.1
1
10
I
G
V
G
mA
mA
I
G
1: IGT, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
µs
t
gd
V
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
IGD, T
VJ
= 125°C
3
4
2
1
5
6
Limit
typ.
T
VJ
= 25°C
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
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