IXYS MMO110-12IO7, MMO110-08IO7, MLO110-14IO7, MLO110-08IO7, MLO110-12IO7 Datasheet
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MMO 110
MLO 110
AC Controller Modules
Preliminary Data
V
V
RSM
DSM
V
RRM
V
DRM
VV
Type
W1C
I / H G / F
800 800 MMO 110-08io7 MLO 110-08io7
1200 1200 MMO 110-12io7 MLO 110-12io7
1400 1400 MMO 110-14io7 MLO 110-14io7
W1H
I / H
Symbol Conditions Maximum Ratings
I
RMS
I
TRMS
I
TAVM
I
TSM
TC = 85°C, 50 - 400 Hz, module 112 A
TC = 85°C; (180° sine) 51 A
TVJ = 45°C t = 10 ms (50 Hz), sine 1000 A
VR = 0 t = 8.3 ms (60 Hz), sine 1070 A
TVJ = 125°C t = 10 ms (50 Hz), sine 870 A
VR = 0 t = 8.3 ms (60 Hz), sine 930 A
2
t TVJ = 45°C t = 10 ms (50 Hz), sine 5000 A2s
I
VR = 0 t = 8.3 ms (60 Hz), sine 4810 A2s
= 125°C t = 10 ms (50 Hz), sine 3780 A2s
T
VJ
VR = 0 t = 8.3 ms (60 Hz), sine 3630 A2s
(di/dt)
cr
TVJ = 125°C repetitive, IT = 50 A 100 A/µs
f = 50 Hz, tP = 200 µs
= 2/3 V
V
D
IG = 0.45 A non repetitive, IT = I
DRM
TAVM
diG/dt = 0.45 A/µs
(dv/dt)
TVJ = 125°C; VDR = 2/3 V
cr
DRM
RGK = ¥; method 1 (linear voltage rise)
P
P
V
T
T
T
V
M
GM
GAVM
RGM
VJ
VJM
stg
ISOL
d
TVJ = 125°C tp = 30 µs 10 W
IT = I
TAVM
tp = 300 µs 5 W
-40...+150 °C
-40...+125 °C
50/60 Hz, RMS t = 1 min 2500 V~
I
£ 1 mA t = 1 s 3000 V~
ISOL
Mounting torque (M4) 1.5...2.0/14...18 Nm/lb.in.
Weight typ. 18 g
A
N
G / F
N
81 A
500 A/µs
1000 V/µs
0.5 W
10 V
150 °C
I
RMS
V
= 112 A
= 800-1400 V
RRM
Features
• Thyristor controller for AC (circuit
W1C acc. to IEC) for mains frequency
• Isolation voltage 3000 V~
• Planar glass passivated chips
• Low forward voltage drop
• Lead suitable for PC board solering
Applications
• Switching and control of single and
three phase AC circuits
• Light and temperature control
• Softstart AC motor controller
• Solid state switches
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling
• High power density
• Small and light weight
Data according to IEC 60747 and to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
008
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MMO 110
MLO 110
Symbol Conditions Characteristic Values
ID , I
V
T
V
T0
r
T
V
GT
R
TVJ= 125°C; VR = V
; VD = V
RRM
DRM
£ 5mA
IT= 150 A; TVJ = 25°C £ 1.57 V
For power-loss calculations only 0.85 V
5.6 mW
VD = 6 V TVJ = 25°C £ 1.5 V
TVJ = -40°C £ 1.9 V
I
GT
VD = 6 V TVJ = 25°C £ 100 mA
TVJ = -40°C £ 200 mA
V
GD
I
GD
I
L
TVJ = 125°C; VD = 2/3 V
DRM
£ 0.2 V
£ 1mA
TVJ = 25°C; tP = 10 µs £ 200 mA
IG = 0.45 A; diG/dt = 0.45 A/µs
I
H
t
gd
TVJ = 25°C; VD = 6 V; RGK = ¥ £ 100 mA
TVJ = 25°C; VD = ½ V
DRM
£ 2µs
IG = 0.45 A; diG/dt = 0.45 A/µs
R
thJC
per thyristor; DC 0.8 K/W
per module 0.4 K/W
R
thCH
per thyristor; sine 180° el typ. 0.12 K/W
per module typ. 0.06 K/W
d
S
d
A
Creeping distance on surface 11.2 mm
Creepage distance in air 17.0 mm
a Max. allowable acceleration 50 m/s
10
1: IGT, T
2: I
V
3: I
V
G
1
0.1
0
10
GT
GT
IGD, T
, T
, T
VJ
= 125°C
VJ
= 25°C
VJ
= -40°C
VJ
1
= 125°C
1
10
2
10
Fig. 1 Gate trigger characteristics
1000
µs
t
gd
100
2
typ.
Limit
3
4
4: P
GAV
5: P
GM
6: P
GM
2
10
I
G
T
= 0.5 W
= 5 W
= 10 W
3
= 25°C
VJ
5
mA
6
4
10
Dimensions in mm (1 mm = 0.0394")
10
1
10 100 1000
mA
I
G
Fig. 2 Gate trigger delay time
© 2000 IXYS All rights reserved
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