IXYS MKI75-06A7 Datasheet
MKI 75-06 A7
IGBT Modules
H-Bridge
Short Circuit SOA Capability
Square RBSOA
Preliminary Data
IGBTs
Symbol Conditions Maximum Ratings
V
CES
V
GES
I
C25
I
C80
RBSOA VGE = ±15 V; RG = 18 Ω; TVJ = 125°C I
t
SC
(SCSOA) non-repetitive
TVJ = 25°C to 150°C 600 V
±
20 V
TC = 25°C 90 A
TC = 80°C 60 A
= 120 A
Clamped inductive load; L = 100 µH V
V
= V
CE
; VGE = ±15 V; RG = 18 Ω; TVJ = 125°C 10 µs
CES
CM
CEK
≤ V
CES
I
C25
V
CES
V
CE(sat) typ.
= 90 A
= 600 V
= 2.1 V
Features
●
NPT IGBT technology
●
low saturation voltage
●
low switching losses
●
switching frequency up to 30 kHz
●
square RBSOA, no latch up
●
high short circuit capability
●
positive temperature coefficient for
easy parallelling
●
MOS input, voltage controlled
●
ultra fast free wheeling diodes
●
solderable pins for PCB mounting
●
package with copper base plate
B3
P
tot
TC = 25°C 280 W
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
V
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
E
C
Q
R
CE(sat)
GE(th)
on
off
ies
Gon
thJC
VJ
IC = 75 A; VGE = 15 V; TVJ = 25°C 2.1 2.6 V
TVJ = 125°C 2.5 V
IC = 1.5 mA; VGE = V
V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C 1.3 mA
TVJ = 125°C 0.9 mA
VCE = 0 V; VGE = ± 20 V 200 nA
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 75 A
VGE = ±15 V; RG = 18 Ω
VCE = 25 V; VGE = 0 V; f = 1 MHz 3200 pF
V
= 300V; VGE = 15 V; IC = 75 A 190 nC
CE
(per IGBT) 0.44 K/W
min. typ. max.
4.5 6.5 V
50 ns
50 ns
270 ns
40 ns
3.5 mJ
2.5 mJ
Advantages
●
space savings
●
reduced protection circuits
●
package designed for wave soldering
Typical Applications
●
motor control
- DC motor armature winding
- DC motor excitation winding
- synchronous motor excitation winding
●
supply of transformer primary winding
- power supplies
- welding
- X-ray
- UPS
- battery charger
IXYS reserves the right to change limits, test conditions and dimensions.IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
204
1 - 4
MKI 75-06 A7
Diodes
Symbol Conditions Maximum Ratings
I
F25
I
F80
TC = 25°C 140 A
TC = 80°C 85 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
RM
t
rr
R
thJC
IF = 75 A; VGE = 0 V; TVJ = 25°C 1.8 2.1 V
TVJ = 125°C 1.3 V
IF = 60 A; diF/dt = -500 A/µs; TVJ = 125°C 28 A
VR = 300 V; VGE = 0 V 100 ns
(per diode) 0.61 K/W
Module
Symbol Conditions Maximum Ratings
T
VJ
T
stg
V
ISOL
M
d
I
≤ 1 mA; 50/60 Hz 2500 V~
ISOL
Mounting torque (M5) 2.7 - 3.3 Nm
-40...+150 °C
-40...+125 °C
Symbol Conditions Characteristic Values
min. typ. max.
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
Free Wheeling Diode (typ. at TJ = 125°C)
Thermal Response
IGBT (typ.)
Free Wheeling Diode (typ.)
V0 = 0.95 V; R0 = 20 m
V0 = 1.014 V; R0 = 4 m
C
= 0.248 J/K; R
th1
C
= 1.849 J/K; R
th2
C
= 0.23 J/K; R
th1
C
= 1.3 J/K; R
th2
= 0.343 K/W
th1
= 0.097 K/W
th2
= 0.483 K/W
th1
= 0.127 K/W
th2
Ω
Ω
B3
R
pin-chip
d
S
d
A
R
thCH
Creepage distance on surface 6 mm
Strike distance in air 6 mm
with heatsink compound 0.02 K/W
5mΩ
Weight 180 g
Dimensions in mm (1 mm = 0.0394")
© 2002 IXYS All rights reserved
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