IXYS MII400-12E4, MDI400-12E4 Datasheet
IGBT Module
phaseleg and chopper topolgies
Preliminary
T1
8
3
D1
MII 400-12E4
MID 400-12E4
MDI 400-12E4
3
D1
T1
8
D11
I
C25
V
CES
V
CE(sat) typ.
3
= 420 A
= 1200 V
= 2.2 V
11
10
D2
1
2
T2
11
10
9
T2
D12
1
9
D2
2
MII MID MDI
IGBTs T1-T2
Symbol Conditions Maximum Ratings
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA) non repetitive
P
tot
Symbol Conditions Characteristic Values
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
R
thJH
TVJ = 25°C to 150°C 1200 V
±
20 V
TC = 25°C 420 A
TC = 80°C 300 A
VGE = ±15 V; RG = 4.7 Ω; TVJ = 125°C 450 A
RBSOA, Clamped inductive load; L = 100 µH V
CES
VCE = 900 V; VGE = ±15 V; RG = 4.7 Ω; TVJ = 125°C 10 µs
TC = 25°C 1700 W
(T
= 25°C, unless otherwise specified)
VJ
min. typ. max.
IC = 300 A; VGE = 15 V; TVJ = 25°C 2.2 2.8 V
TVJ = 125°C 2.6 V
IC = 10 mA; VGE = V
VCE = V
= 0 V; TVJ = 25°C 0.8 3.3 mA
CES; VGE
CE
TVJ = 125°C 3.5 mA
4.5 6.5 V
VCE = 0 V; VGE = ± 20 V 600 nA
150 ns
Inductive load, T
= 125°C
VJ
VCE = 600 V; IC = 300 A
VGE = ±15 V; RG = 4.7 Ω
60 ns
680 ns
50 ns
36 mJ
30 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz 17 nF
V
= 600 V; VGE = 15 V; IC = 300 A 2.25 µC
CE
(per IGBT) 0.08 K/W
with heatsink compound 0.15 K/W
1
2
Features
• IGBT
-low saturation voltage
-positive temperature coefficient
-fast switching
-short tail current for optimized
performance in resonant circuits
• HiPerFRED
TM
diodes
-fast and soft reverse recovery
-low operating forward voltage
-low leakage current
• Package
-low inductive current path
-screw connection to high current
main terminals
-use of non interchangeable
connectors for auxiliary terminals
possible
-kelvin emitter terminal for easy drive
-isolated ceramic base plate
Applications
• drives
-AC
-DC
• power supplies
-rectifiers with power factor
correction
and recuperation capability
-UPS
© 2002 IXYS All rights reserved
225
1 - 2
MII 400-12E4 MID 400-12E4
MDI 400-12E4
Free wheeling diodes D1-D2
Symbol Conditions Maximum Ratings
I
F25
I
F80
TC = 25°C 450 A
TC = 80°C 290 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
RM
t
rr
R
thJC
R
thJH
IF = 300 A; VGE = 0 V; TVJ = 25°C 2.3 2.7 V
TVJ = 125°C 1.7 V
IF = 225 A; diF/dt = -2000 A/µs; TVJ = 125°C 2 40 A
VR = 600 V; VGE = 0 V 220 ns
(per diode) 0.15 K/W
with heatsink compound 0.3 K/W
Chopper anti parallel diodes D11-D12
Symbol Conditions Maximum Ratings
I
F25
I
F80
TC = 25°C 150 A
TC = 80°C 95 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
RM
t
rr
R
thJC
R
thJH
IF = 100 A; VGE = 0 V; TVJ = 25°C 2.3 2.7 V
TVJ = 125°C 1.7 V
IF = 75 A; diF/dt = -750 A/µs; TVJ = 125°C 80 A
VR = 600 V; VGE = 0 V 220 ns
(per diode) 0.45 K/W
with heatsink compound 0.9 K/W
Dimensions in mm (1 mm = 0.0394")
Optional accessories for modules
keyed twin plugs
(UL758, style 1385, CSA class 5851,
guide 460-1-1)
• Type ZY180L with wire length 350mm
– for pins 4 (yellow wire) and 5 (red wire)
– for pins 11 (yellow wire) and 10 (red wire)
• Type ZY180R with wire length 350mm
– for pins 7 (yellow wire) and 6 (red wire)
– for pins 8 (yellow wire) and 9 (red wire)
Module
Symbol Conditions Maximum Ratings
T
VJ
T
stg
V
ISOL
M
d
I
≤ 1 mA; 50/60 Hz 4000 V~
ISOL
Mounting torque (module, M6) 2.25 - 2.75 Nm
(terminals, M6) 4.5 - 5.5 Nm
-40...+150 °C
-40...+125 °C
Symbol Conditions Characteristic Values
min. typ. max.
d
S
d
A
Creepage distance on surface 2 mm
Strike distance in air 2 mm
Weight 250 g
© 2002 IXYS All rights reserved
2 - 2
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