IXYS MID550-12A4, MDI550-12A4 Datasheet
© 2000 IXYS All rights reserved
1 - 4
Symbol Conditions Maximum Ratings
V
CES
TJ= 25°C to 150°C 1200 V
V
CGR
TJ= 25°C to 150°C; RGE = 20 kW 1200 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
TC= 25°C 670 A
I
C80
TC= 80°C 460 A
I
CM
TC= 80°C, tp = 1 ms
920 A
t
SC
VGE = ±15 V, VCE = V
CES
, TJ = 125°C10ms
(SCSOA) RG= 1.8 W, non repetitive
RBSOA VGE= ±15 V, TJ = 125°C, RG = 1.8 W ICM = 800 A
Clamped inductive load, L = 100 mHV
CEK
< V
CES
P
tot IGBT
TC= 25°C 2750 W
T
J
150 °C
T
stg
-40 ... +150 °C
V
ISOL
50/60 Hz, RMS t = 1 min 4000 V~
I
ISOL
£ 1 mA t = 1 s 4800 V~
Insulating material: Al2O
3
M
d
Mounting torque (module) 2.25-2.75 Nm
20-25 lb.in.
(teminals) 2.5-3.7 Nm
22-33 lb.in.
d
S
Creepage distance on surface 1 4 mm
d
A
Strike distance through air 9.6 mm
a Max. allowable acceleration 50 m/s
2
Weight Typical 250 g
8.8 oz.
Data according to a single IGBT/FRED unless otherwise stated.
I
C25
= 670 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.3 V
Features
●
NPT IGBT technology
●
low saturation voltage
●
low switching losses
●
switching frequency up to 30 kHz
●
square RBSOA, no latch up
●
high short circuit capability
●
positive temperature coefficient for
easy parallelling
●
MOS input, voltage controlled
●
ultra fast free wheeling diodes
●
package with DCB ceramic base plate
●
isolation voltage 4800 V
●
UL registered E72873
Advantages
●
space and weight savings
●
reduced protection circuits
Typical Applications
●
AC and DC motor control
●
power supplies
●
welding inverters
Short Circuit SOA Capability
Square RBSOA
MID 550-12 A4
MDI 550-12 A4
8
9
1
2
3
11
10
E 72873
2
1
3
10
11
MID
2
1
3
9
8
MDI
IGBT Modules
Additional current limitation by external leads
030
© 2000 IXYS All rights reserved
2 - 4
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
(BR)CES
VGE = 0 V 1200 V
V
GE(th)
IC = 16 mA, VCE = V
GE
4.5 6.5 V
I
CES
VCE= V
CES
TJ = 25°C21mA
TJ = 125°C30mA
I
GES
VCE= 0 V, VGE = ±20 V 1.6 µA
V
CE(sat)
IC = 400 A, VGE = 15 V 2.3 2.8 V
C
ies
26 nF
C
oes
VCE = 25 V, VGE = 0 V, f = 1 MHz 4 nF
C
res
2nF
t
d(on)
100 ns
t
r
60 ns
t
d(off)
600 ns
t
f
90 ns
E
on
64 mJ
E
off
59 mJ
R
thJC
0.05 K/W
R
thJS
with heatsink compound 0.09 K/W
Free Wheeling Diode (FRED) Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
F
IF = 400 A, VGE = 0 V 2.4 2.6 V
IF = 400 A, VGE = 0 V, TJ = 125°C 1.9 2.0 V
I
F
TC = 25°C
750 A
TC = 80°C 460 A
I
RM
IF = 400 A, VGE = 0 V, -diF/dt = 3000 A/ms 300 A
t
rr
TJ = 125°C, VR = 600 V 200 ns
R
thJC
0.09 K/W
R
thJS
0.18 K/W
Anti Parallel Diode (FRED) Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
F
IF = 100 A, VGE = 0 V 2.4 2.6 V
IF = 100 A, VGE = 0 V, TJ = 125°C 1.9 2.0 V
I
F
TC = 25°C 150 A
TC = 80°C95A
I
RM
IF = 100 A, VGE = 0 V, -diF/dt = 600 A/ms62A
t
rr
TJ = 125°C, VR = 600 V 200 ns
R
thJC
0.45 K/W
R
thJS
0.9 K/W
Inductive load, TJ = 125°C
I
C
= 400 A, VGE = ±15 V
VCE = 600 V, RG = 1.8 W
MID 550-12 A4
MDI 550-12 A4
Dimensions in mm (1 mm = 0.0394")
Additional current limitation by external leads
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.3 V; R0 = 3.2 mW
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.3 V; R0 = 1.5 mW
Thermal Response
IGBT (typ.)
C
th1
= 0.90 J/K; R
th1
= 0.049 K/W
C
th2
= 2.07 J/K; R
th2
= 0.001 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.71 J/K; R
th1
= 0.090 K/W
C
th2
= 1.30 J/K; R
th2
= 0.002 K/W
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