IXYS MII200-12A4, MID200-12A4, MDI200-12A4 Datasheet
© 2000 IXYS All rights reserved
1 - 4
IGBT Modules
Short Circuit SOA Capability
Square RBSOA
MII 200-12 A4 MID 200-12 A4
MDI 200-12 A4
Symbol Conditions Maximum Ratings
V
CES
TJ= 25°C to 150°C 1200 V
V
CGR
TJ= 25°C to 150°C; RGE = 20 kW 1200 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
TC= 25°C 270 A
I
C80
TC= 80°C 180 A
I
CM
TC= 80°C, tp = 1 ms 360 A
t
SC
VGE = ±15 V, VCE = V
CES
, TJ = 125°C10ms
(SCSOA) RG= 6.8 W, non repetitive
RBSOA VGE= ±15 V, TJ = 125°C, RG = 6.8 W ICM = 360 A
Clamped inductive load, L = 100 mHV
CEK
< V
CES
P
tot
TC= 25°C 1130 W
T
J
150 °C
T
stg
-40 ... +150 °C
V
ISOL
50/60 Hz, RMS t = 1 min 4000 V~
I
ISOL
£ 1 mA t = 1 s 4800 V~
Insulating material: Al2O
3
M
d
Mounting torque (module) 2.25-2.75 Nm
20-25 lb.in.
(teminals) 2.5-3.7 Nm
22-33 lb.in.
d
S
Creepage distance on surface 1 0 mm
d
A
Strike distance through air 9.6 mm
a Max. allowable acceleration 50 m/s
2
Weight Typical 250 g
8.8 oz.
Data according to a single IGBT/FRED unless otherwise stated.
8
9
1
2
3
11
10
10
11
9
8
2
1
3
MII
2
1
3
10
11
MID
2
1
3
9
8
MDI
E 72873
I
C25
= 270 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.2 V
Features
●
NPT IGBT technology
●
low saturation voltage
●
low switching losses
●
switching frequency up to 30 kHz
●
square RBSOA, no latch up
●
high short circuit capability
●
positive temperature coefficient for
easy parallelling
●
MOS input, voltage controlled
●
ultra fast free wheeling diodes
●
package with DCB ceramic base plate
●
isolation voltage 4800 V
●
UL registered E72873
Advantages
●
space and weight savings
●
reduced protection circuits
Typical Applications
●
AC and DC motor control
●
AC servo and robot drives
●
power supplies
●
welding inverters
030
© 2000 IXYS All rights reserved
2 - 4
MII 200-12 A4 MID 200-12 A4
MDI 200-12 A4
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
(BR)CES
VGE = 0 V 1200 V
V
GE(th)
IC = 6 mA, VCE = V
GE
4.5 6.5 V
I
CES
VCE= V
CES
TJ = 25°C10mA
TJ = 125°C15mA
I
GES
VCE= 0 V, VGE = ±20 V ±700 nA
V
CE(sat)
IC = 150 A, VGE = 15 V 2.2 2.7 V
C
ies
11 nF
C
oes
VCE = 25 V, VGE = 0 V, f = 1 MHz 1.5 nF
C
res
0.65 nF
t
d(on)
100 ns
t
r
50 ns
t
d(off)
650 ns
t
f
50 ns
E
on
24.2 mJ
E
off
21 mJ
R
thJC
0.11 K/W
R
thJS
with heatsink compound 0.22 K/W
Reverse Diode (FRED) Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
F
IF = 150 A, VGE = 0 V, 2.2 2.5 V
IF = 150 A, VGE = 0 V, TJ = 125°C 1.8 1.9 V
I
F
TC = 25°C 300 A
TC = 80°C 200 A
I
RM
IF = 150 A, VGE = 0 V, -diF/dt = 1200 A/ms 125 A
t
rr
TJ = 125°C, VR = 600 V 200 ns
R
thJC
0.23 K/W
R
thJS
with heatsink compound 0.45 K/W
Inductive load, TJ = 125°C
I
C
= 150 A, VGE = ±15 V
VCE = 600 V, RG = 6.8 W
Dimensions in mm (1 mm = 0.0394")
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.5 V; R0 = 7.0 mW
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.3 V; R0 = 3.4 mW
Thermal Response
IGBT (typ.)
C
th1
= 0.40 J/K; R
th1
= 0.110 K/W
C
th2
= 0.93 J/K; R
th2
= 0.003 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.28 J/K; R
th1
= 0.226 K/W
C
th2
= 0.51 J/K; R
th2
= 0.005 K/W
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