IXYS MII100-12A3, MID100-12A3, MDI100-12A3 Datasheet
MII 100-12 A3 MID 100-12 A3
MDI 100-12 A3
IGBT Modules
Short Circuit SOA Capability
Square RBSOA
MII
1
7
6
4
5
3
2
Symbol Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C80
I
CM
t
SC
TJ= 25°C to 150°C 1200 V
TJ= 25°C to 150°C; RGE = 20 kW 1200 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 135 A
TC= 80°C90A
TC= 80°C, tp = 1 ms 180 A
VGE = ±15 V, VCE = V
, TJ = 125°C10ms
CES
(SCSOA) RG= 15 W, non repetitive
RBSOA V
= ±15 V, TJ = 125°C, RG = 15 W ICM = 150 A
GE
Clamped inductive load, L = 100 mHV
P
tot
T
J
T
stg
V
ISOL
M
d
TC= 25°C 560 W
50/60 Hz, RMS t = 1 min 4000 V~
£ 1 mA t = 1 s 4800 V~
I
ISOL
Insulating material: Al2O
3
Mounting torque (module) 2.25-2.75 Nm
(teminals) 2.5-3.7 Nm
d
S
d
A
Creepage distance on surface 12.7 mm
Strike distance through air 9.6 mm
a Max. allowable acceleration 50 m/s
Weight Typical 130 g
MID
1
3
4
5
2
< V
CEK
MDI
7
6
CES
150 °C
-40 ... +150 °C
20-25 lb.in.
22-33 lb.in.
4.6 oz.
I
C25
V
CES
V
CE(sat) typ.
1
3
2
= 135 A
= 1200 V
= 2.2 V
3
1
2
Features
●
NPT IGBT technology
●
low saturation voltage
●
low switching losses
●
switching frequency up to 30 kHz
●
square RBSOA, no latch up
●
high short circuit capability
●
positive temperature coefficient for
easy parallelling
●
MOS input, voltage controlled
●
ultra fast free wheeling diodes
●
package with DCB ceramic base plate
●
isolation voltage 4800 V
●
UL registered E72873
Advantages
●
space and weight savings
●
reduced protection circuits
Typical Applications
●
AC and DC motor control
●
AC servo and robot drives
●
power supplies
●
welding inverters
2
4
5
E 72873
6
7
Data according to a single IGBT/FRED unless otherwise stated.
© 2000 IXYS All rights reserved
030
1 - 4
MII 100-12 A3 MID 100-12 A3
MDI 100-12 A3
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
(BR)CES
V
GE(th)
I
CES
VGE = 0 V 1200 V
IC = 3 mA, VCE = V
VCE= V
CES
GE
TJ = 25°C5mA
4.5 6.5 V
TJ = 125°C 7.5 mA
I
GES
V
C
C
C
t
d(on)
t
r
t
d(off)
t
f
E
E
R
R
CE(sat)
ies
oes
res
on
off
thJC
thJS
VCE= 0 V, VGE = ±20 V ±300 nA
IC = 75 A, VGE = 15 V 2.2 2.7 V
5.5 nF
VCE = 25 V, VGE = 0 V, f = 1 MHz 0.75 nF
0.33 nF
100 ns
Inductive load, T
= 75 A, VGE = ±15 V
I
C
= 125°C
J
VCE = 600 V, RG = 15 W
50 ns
650 ns
50 ns
12.1 mJ
10.5 mJ
0.22 K/W
with heatsink compound 0.44 K/W
Dimensions in mm (1 mm = 0.0394")
Reverse Diode (FRED) Characteristic Values
= 25°C, unless otherwise specified)
(T
J
min. typ. max.
V
F
IF = 75 A, VGE = 0 V, 2.2 2.5 V
IF = 75 A, VGE = 0 V, TJ = 125°C 1.7 1.8 V
I
F
TC = 25°C 150 A
TC = 80°C95A
I
RM
t
rr
R
thJC
R
thJS
IF = 75 A, VGE = 0 V, -diF/dt = 600 A/ms62A
TJ = 125°C, VR = 600 V 200 ns
0.45 K/W
with heatsink compound 0.9 K/W
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.5 V; R0 = 13.6 mW
Free Wheeling Diode (typ. at TJ = 125°C)
Thermal Response
IGBT (typ.)
V0 = 1.3 V; R0 = 6.5 mW
C
= 0.20 J/K; R
th1
C
= 0.47 J/K; R
th2
= 0.218 K/W
th1
= 0.005 K/W
th2
© 2000 IXYS All rights reserved
Free Wheeling Diode (typ.)
C
= 0.14 J/K; R
th1
C
= 0.26 J/K; R
th2
= 0.443 K/W
th1
= 0.009 K/W
th2
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