Fast Recovery
Epitaxial Diode
(FRED) Module
MEO 450-12 DA V
I
t
RRM
FAVM
rr
= 1200 V
= 453 A
= 450 ns
Preliminary data
V
RSM
V
RRM
Type
3 1
V V
1200 1200 MEO 450-12DA
Symbol Test Conditions Maximum Ratings
I
FRMS
I
ÿÿ
① TC = °C; rectangular, d = 0.5 A
FAVM
I
FRM
I
FSM
I2t TVJ = 45°C; t = 10 ms (50 Hz), sine A2s
T
VJ
T
stg
T
Smax
P
tot
V
ISOL
M
d
d
S
d
A
a Maximum allowable acceleration m/s
Weight g
75 640
TC = °CA
75 453
tP < 10 ms; rep. rating, pulse width limited by T
VJM
TVJ = 45°C; t = 10 ms (50 Hz), sine A
t = 8.3 ms(60 Hz), sine A
TVJ = 150°C; t = 10 ms (50 Hz), sine A
t = 8.3 ms(60 Hz), sine A
2460
4800
5280
4320
4750
A
115200
t = 8.3 ms(60 Hz), sine A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine A2s
t = 8.3 ms(60 Hz), sine A2s
TC = 25°CW
50/60 Hz, RMS t = 1 min V~
I
£ 1 mA t = 1 s V~
ISOL
Mounting torque (M6) Nm/lb.in.
Terminal connection torque (M6) Nm/lb.in.
Creeping distance on surface mm
Strike distance through air mm
117100
93300
94800
-40...+150
-40...+125
110
1750
3000
3600
2.25-2.75/20-25
4.50-5.50/40-48
12.7
9.6
°C
°C
°C
50
150
2
3
1
Features
●
International standard package
with DCB ceramic base plate
●
Planar passivated chips
●
Short recovery time
●
Low switching losses
●
Soft recovery behaviour
●
Isolation voltage 3600 V~
●
UL registered E 72873
Applications
●
Antiparallel diode for high frequency
switching devices
●
Free wheeling diode in converters
and motor control circuits
●
Inductive heating and melting
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
High reliability circuit operation
●
Low voltage peaks for reduced
protection circuits
●
Low noise switching
●
Low losses
Symbol Test Conditions Characteristic Values (per diode)
typ. max.
I
R
V
F
V
T0
r
T
R
thJH
R
thJC
t
rr
I
RM
① I
rating includes reverse blocking losses at T
FAVM
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
TVJ = 25°CVR= V
TVJ = 25°CVR= 0.8 • V
TVJ = 125°CVR= 0.8 • V
300 1.51
IF = A; TVJ=125°CV
520 1.76
IF = A; TVJ=125°CV
For power-loss calculations only V
RRM
RRM
RRM
TVJ=25°CV
TVJ=25°CV
1.78
1.96
1.16
1.15
DC current K/W
DC current K/W
600 450 500
IF = A TVJ = 100°Cns
600 110
VR=VT
800 165
-di/dt = A/msTVJ = 100°CA
= 25°CA
VJ
, VR = 0.6 V
VJM
, duty cycle d = 0.5
RRM
0.114
0.071
24
120
mA
mA
6
mA
mW
© 2000 IXYS All rights reserved
Dimensions in mm (1 mm = 0.0394")
749
1 - 2
MEO 450-12 DA
800
A
700
600
I
F
500
400
300
TVJ=125°C
200
TVJ=25°C
100
0
0.0 0.5 1.0 1.5 2.0 2.5
V
F
Fig. 1 Forward current IF versus V
1.4
1.2
K
f
1.0
I
0.8
0.6
RM
Q
r
0.4
0.2
0.0
0 40 80 120 160
°C
T
VJ
Fig. 4 Dynamic parameters Qr, I
versus T
VJ
Q
120
µC
100
r
80
60
TVJ= 100°C
VR = 600V
max.
IF=600A
IF=600A
IF=450A
IF=225A
200
A
TVJ= 100°C
180
VR = 600V
160
I
RM
140
IF=600A
120
IF=600A
IF=450A
100
IF=225A
max.
typ.
80
40
20
typ.
60
40
20
V
100 1000
A/ms
-diF/dt
0
F
Fig. 2 Reverse recovery charge Q
versus -diF / dt
t
rr
2000
ns
µC
1600
max.
TVJ= 100°C
VR = 600V
r
IF=600A
1200
IF=600A
IF=450A
IF=225A
800
0
200 600 10000 400 800
-di
Fig. 3 Peak reverse current I
versus -diF / dt
100
A
V
90
80
V
FR
70
60
t
fr
50
40
TVJ= 125°C
IF = 520A
V
FR
/dt
F
A/ms
RM
2.5
µs
2.0
t
fr
1.5
1.0
30
400
typ.
20
0.5
10
0
200 600 10000 400 800
RM
Fig. 5 Recovery time trr versus -diF / dt Fig. 6 Peak forward voltage VFR and t
-di
A/ms
/dt
F
0
0 400 800 1200
-diF/dt
versus diF / dt
0.0
A/ms
fr
0.14
K/W
0.12
0.10
Z
thJH
thJS
0.08
0.06
0.04
0.02
0.00
0.001 0.01 0.1 1 10
s
t
Fig. 7 Transient thermal impedance junction to case
© 2000 IXYS All rights reserved
Constants for Z
iR
calculation:
thJS
(K/W) ti (s)
thi
1 0.001 0.08
2 0.004 0.024
3 0.027 0.112
4 0.082 0.464
2 - 2