IXYS MEO450-12DA Datasheet

Fast Recovery Epitaxial Diode (FRED) Module
MEO 450-12 DA V
I t
RRM
FAVM
rr
= 1200 V = 453 A = 450 ns
Preliminary data
V
RSM
V
RRM
Type
3 1
V V
1200 1200 MEO 450-12DA
Symbol Test Conditions Maximum Ratings I
FRMS
I
ÿÿ
TC = °C; rectangular, d = 0.5 A
FAVM
I
FRM
I
FSM
I2t TVJ = 45°C; t = 10 ms (50 Hz), sine A2s
T
VJ
T
stg
T
Smax
P
tot
V
ISOL
M
d
d
S
d
A
a Maximum allowable acceleration m/s Weight g
75 640
TC = °CA
75 453
tP < 10 ms; rep. rating, pulse width limited by T
VJM
TVJ = 45°C; t = 10 ms (50 Hz), sine A
t = 8.3 ms(60 Hz), sine A
TVJ = 150°C; t = 10 ms (50 Hz), sine A
t = 8.3 ms(60 Hz), sine A
2460 4800
5280 4320
4750
A
115200
t = 8.3 ms(60 Hz), sine A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine A2s
t = 8.3 ms(60 Hz), sine A2s
TC = 25°CW 50/60 Hz, RMS t = 1 min V~
I
£ 1 mA t = 1 s V~
ISOL
Mounting torque (M6) Nm/lb.in. Terminal connection torque (M6) Nm/lb.in.
Creeping distance on surface mm Strike distance through air mm
117100
93300 94800
-40...+150
-40...+125 110
1750 3000
3600
2.25-2.75/20-25
4.50-5.50/40-48
12.7
9.6
°C °C °C
50
150
2
3
1
Features
International standard package with DCB ceramic base plate
Planar passivated chips
Low switching losses
Soft recovery behaviour
Isolation voltage 3600 V~
UL registered E 72873
Applications
Antiparallel diode for high frequency switching devices
Free wheeling diode in converters and motor control circuits
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
High reliability circuit operation
Low voltage peaks for reduced protection circuits
Low noise switching
Low losses
Symbol Test Conditions Characteristic Values (per diode)
typ. max.
I
R
V
F
V
T0
r
T
R
thJH
R
thJC
t
rr
I
RM
I
rating includes reverse blocking losses at T
FAVM
Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
TVJ = 25°CVR= V TVJ = 25°CVR= 0.8 • V TVJ = 125°CVR= 0.8 • V
300 1.51
IF = A; TVJ=125°CV
520 1.76
IF = A; TVJ=125°CV
For power-loss calculations only V
RRM
RRM RRM
TVJ=25°CV TVJ=25°CV
1.78
1.96
1.16
1.15
DC current K/W DC current K/W
600 450 500
IF = A TVJ = 100°Cns
600 110
VR=VT
800 165
-di/dt = A/msTVJ = 100°CA
= 25°CA
VJ
, VR = 0.6 V
VJM
, duty cycle d = 0.5
RRM
0.114
0.071
24
120
mA mA
6
mA
mW
© 2000 IXYS All rights reserved
Dimensions in mm (1 mm = 0.0394")
749
1 - 2
Z
MEO 450-12 DA
800
A
700 600
I
F
500 400 300
TVJ=125°C
200
TVJ=25°C
100
0
0.0 0.5 1.0 1.5 2.0 2.5 V
F
Fig. 1 Forward current IF versus V
1.4
1.2
K
f
1.0
I
0.8
0.6
RM
Q
r
0.4
0.2
0.0 0 40 80 120 160
°C
T
VJ
Fig. 4 Dynamic parameters Qr, I
versus T
VJ
Q
120
µC
100
r
80
60
TVJ= 100°C VR = 600V
max.
IF=600A IF=600A IF=450A IF=225A
200
A
TVJ= 100°C
180
VR = 600V
160
I
RM
140
IF=600A
120
IF=600A IF=450A
100
IF=225A
max.
typ.
80
40
20
typ.
60 40 20
V
100 1000
A/ms
-diF/dt
0
F
Fig. 2 Reverse recovery charge Q
versus -diF / dt
t
rr
2000
ns
µC
1600
max.
TVJ= 100°C VR = 600V
r
IF=600A
1200
IF=600A IF=450A IF=225A
800
0
200 600 10000 400 800
-di
Fig. 3 Peak reverse current I
versus -diF / dt
100
A
V
90 80
V
FR
70 60
t
fr
50 40
TVJ= 125°C IF = 520A
V
FR
/dt
F
A/ms
RM
2.5 µs
2.0
t
fr
1.5
1.0
30
400
typ.
20
0.5
10
0
200 600 10000 400 800
RM
Fig. 5 Recovery time trr versus -diF / dt Fig. 6 Peak forward voltage VFR and t
-di
A/ms
/dt
F
0
0 400 800 1200
-diF/dt
versus diF / dt
0.0
A/ms
fr
0.14
K/W
0.12
0.10
Z
thJH
thJS
0.08
0.06
0.04
0.02
0.00
0.001 0.01 0.1 1 10
s
t
Fig. 7 Transient thermal impedance junction to case
© 2000 IXYS All rights reserved
Constants for Z
iR
calculation:
thJS
(K/W) ti (s)
thi
1 0.001 0.08 2 0.004 0.024 3 0.027 0.112 4 0.082 0.464
2 - 2
Loading...