Fast Recovery
Epitaxial Diode
(FRED) Module
MEA 95-06 DA
MEK 95-06 DA
MEE 95-06 DA
V
I
t
RRM
FAV
rr
= 600 V
= 95 A
= 250 ns
V
RSM
V
RRM
Type
V V MEA95-06 DA MEK 95-06 DA MEE 95-06 DA
600 600
123 123 123
Symbol Test Conditions Maximum Ratings
I
FRMS
I
ÿÿ
① T
FAV
I
FRM
I
FSM
I2t TVJ = 45°C; t = 10 ms (50 Hz), sine A2s
T
VJ
T
stg
T
Hmax
P
tot
V
ISOL
M
d
d
S
d
A
a Maximum allowable acceleration m/s
Weight g
T
= °CA
75 142
case
= °C; rectangular, d = 0.5 A
75 95
case
tP < 10 ms; rep. rating, pulse width limited by T
VJM
TVJ = 45°C; t = 10 ms (50 Hz), sine A
t = 8.3 ms(60 Hz), sine A
TVJ = 150°C; t = 10 ms (50 Hz), sine A
t = 8.3 ms(60 Hz), sine A
TBD
1200
1300
1080
1170
A
7200
t = 8.3 ms(60 Hz), sine A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine A2s
t = 8.3 ms(60 Hz), sine A2s
T
= 25°CW
case
50/60 Hz, RMS t = 1 min V~
I
£ 1 mA t = 1 s V~
ISOL
Mounting torque (M5) Nm/lb.in.
Terminal connection torque (M5) Nm/lb.in.
Creep distance on surface mm
Strike distance through air mm
7100
5800
5700
-40...+150
-40...+125
110
280
3000
3600
2.5-4/22-35
2.5-4/22-35
12.7
9.6
°C
°C
°C
50
90
Symbol Test Conditions Characteristic Values (per diode)
typ. max.
I
R
V
F
TVJ = 25°CVR= V
TVJ = 25°CVR= 0.8 • V
TVJ = 125°CVR= 0.8 • V
IF = A; TVJ=125°CV
100 1.36
RRM
RRM
RRM
TVJ=25°CV
IF = A; TVJ=125°CV
300 2.05
TVJ=25°CV
V
T0
r
T
R
thJH
R
thJC
t
rr
I
RM
For power-loss calculations only V
T
= 125°C mW
VJ
DC current K/W
DC current K/W
I
=A TVJ = 100°Cns
100 250 300
F
VR=V TVJ = 25°CA
300 14
-di/dt = A/msTVJ = 100°CA
200 21
0.5
34
1.55
2.09
1.01
2.85
0.550
0.450
2
mA
mA
mA
TO-240 AA
3
2
1
Features
●
International standard package
with DCB ceramic base plate
●
Planar passivated chips
●
Short recovery time
●
Low switching losses
●
Soft recovery behaviour
●
Isolation voltage 3600 V~
●
UL registered E 72873
Applications
●
Antiparallel diode for high frequency
switching devices
●
Free wheeling diode in converters
and motor control circuits
●
Inductive heating and melting
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
2
High reliability circuit operation
●
Low voltage peaks for reduced
protection circuits
●
Low noise switching
●
Low losses
Dimensions in mm (1 mm = 0.0394")
① I
rating includes reverse blocking losses at T
FAV
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
, VR = 0.6 V
VJM
, duty cycle d = 0.5
RRM
© 2000 IXYS All rights reserved
749
1 - 2
MEA 95-06 DA MEE 95-06 DA
MEK 95-06 DA
200
A
175
150
I
F
125
TVJ=150°C
100
TVJ=100°C
TVJ=25°C
75
50
25
0
0.00.51.01.52.0
V
F
Fig. 1 Forward current IF versus
voltage drop VF per leg
2.0
1.5
K
f
1.0
Q
r
Q
r
4
µC
3
2
TVJ= 100°C
VR = 300V
IF=190A
IF= 95A
I
RM
60
TVJ= 100°C
A
VR = 300V
50
40
30
IF=190A
IF= 95A
IF=47.5A
IF=47.5A
20
1
10
V
10 100 1000
A/ms
-diF/dt
0
Fig. 2 Reverse recovery charge Q
versus -diF/dt
250
ns
t
200
rr
TVJ= 100°C
VR = 300V
r
IF=190A
IF= 95A
I
RM
150
IF=47.5A
0
200 600 10000 400 800
-di
Fig. 3 Peak reverse current I
versus -diF/dt
50
TVJ= 100°C
A
IF = 150A
40
V
FR
30
20
t
fr
F
/dt
A/ms
RM
1.0
µs
V
FR
0.8
t
fr
0.6
0.4
0.5
0.0
0 50 100 150
T
VJ
Fig. 4 Dynamic parameters Qr, I
versus junction temperature T
°C
RM
VJ
100
50
200 600 10000 400 800
/dt
-di
F
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t
0.6
K/W
0.5
0.4
Z
thJH
0.3
0.2
0.1
0.0
0.001 0.01 0.1 1 10
s
Fig. 7 Transient thermal impedance junction to heatsink
t
A/ms
10
0
0 200 400 600 800 1000
diF/dt
versus diF/dt
Constants for Z
iR
calculation:
thJH
(K/W) ti (s)
thi
1 0.037 0.002
2 0.138 0.134
3 0.093 0.25
4 0.282 0.274
0.2
0.0
A/ms
fr
© 2000 IXYS All rights reserved
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