IXYS MEA75-12DA, MEK75-12DA, MEE75-12DA Datasheet
Fast Recovery
Epitaxial Diode
(FRED) Module
MEA 75-12 DA
MEK 75-12 DA
MEE 75-12 DA
V
I
t
RRM
FAV
rr
= 1200 V
= 75 A
= 250 ns
Preliminary data
V
RSM
V V MEA75-12 DA MEK 75-12 DA MEE 75-12 DA
1200 1200
Symbol Test Conditions Maximum Ratings
I
FRMS
I
FAV
I
FRM
I
FSM
I2t T
T
VJ
T
stg
T
Hmax
P
tot
V
ISOL
M
d
d
S
d
A
a Maximum allowable acceleration m/s
Weight g
V
RRM
T
= °CA
75 107
case
T
= °C; rectangular, d = 0.5 A
75 75
case
t
< 10 µs; rep. rating, pulse width limited by T
P
T
= 45°C; t = 10 ms (50 Hz), sine A
VJ
T
= 150°C; t = 10 ms (50 Hz), sine A
VJ
= 45°C; t = 10 ms (50 Hz), sine A
VJ
T
= 150°C; t = 10 ms (50 Hz), sine A
VJ
T
= 25°CW
case
50/60 Hz, RMS t = 1 min V~
I
≤ 1 mA t = 1 s V~
ISOL
Mounting torque (M5) Nm/lb.in.
Terminal connection torque (M5) Nm/lb.in.
Creep distance on surface mm
Strike distance through air mm
Type
123 123 123
VJM
TBD
A
1200
t = 8.3 ms (60 Hz), sine A
1300
1080
t = 8.3 ms (60 Hz), sine A
1170
7200
t = 8.3 ms (60 Hz), sine A2s
7100
5800
t = 8.3 ms (60 Hz), sine A2s
5700
-40...+150
-40...+125
110
°C
°C
°C
280
3000
3600
2.50-4/22-35
2.50-4/22-35
12.7
9.6
2
2
50
90
s
s
2
TO-240 AA
3
2
1
Features
●
International standard package
with DCB ceramic base plate
●
Planar passivated chips
●
Short recovery time
●
Low switching losses
●
Soft recovery behaviour
●
Isolation voltage 3600 V~
●
UL registered E 72873
Applications
●
Antiparallel diode for high frequency
switching devices
●
Free wheeling diode in converters
and motor control circuits
●
Inductive heating and melting
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
High reliability circuit operation
●
Low voltage peaks for reduced
protection circuits
●
Low noise switching
●
Low losses
Symbol Test Conditions Characteristic Values (per diode)
typ. max.
I
R
V
F
V
T0
r
T
R
thJH
R
thJC
t
rr
I
RM
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
T
= 25°CV
VJ
T
= 25°CV
VJ
T
= 125°CV
VJ
100 1.85
IF = A; T
300 2.58
IF = A; T
For power-loss calculations only V
DC current K/W
DC current K/W
IF = A T
150 250 300
VR = V T
600 22
-di/dt = A/µsT
200 33
= V
R
RRM
= 0.8 • V
R
= 0.8 • V
R
= 125°CV
VJ
T
=25°CV
VJ
= 125°CV
VJ
T
=25°CV
VJ
RRM
RRM
2.17
2.64
0.5
34
mA
2
mA
mA
1.48
3.65
mΩ
0.550
0.450
= 100°Cns
VJ
= 25°CA
VJ
= 100°CA
VJ
© 2000 IXYS All rights reserved
Dimensions in mm (1 mm = 0.0394")
015
D6 - 5
MEA 75-12 DA MEE 75-12 DA
MEK 75-12 DA
200
A
175
150
I
F
125
TVJ=125°C
TVJ= 25°C
100
75
50
25
0
0123
V
V
F
Fig. 1 Forward current IF versus
voltage drop VF per leg
1.4
1.2
K
f
1.0
I
0.8
RM
Q
r
0.6
0.4
0 50 100 150
°C
T
VJ
Fig. 4 Dynamic parameters Qr, I
versus junction temperature T
Q
10
µC
8
r
6
TVJ= 100°C
VR = 600V
IF= 150A
IF= 100A
IF= 70A
I
RM
100
A
80
60
TVJ= 100°C
VR = 600V
IF= 150A
IF= 100A
IF= 70A
4
2
0
10 100 1000
A/µs
-diF/dt
Fig. 2 Reverse recovery charge Q
versus -diF/dt
350
ns
300
t
rr
250
200
TVJ= 100°C
VR = 600V
IF= 150A
IF= 100A
IF= 70A
r
40
20
0
200 600 10000 400 800
-di
Fig. 3 Peak reverse current I
versus -diF/dt
100
A
80
V
FR
60
40
20
t
fr
F
A/µs
/dt
RM
2.0
µs
V
FR
1.6
t
fr
1.2
0.8
0.4
TVJ= 100°C
IF = 150A
150
200 600 10000 400 800
RM
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t
VJ
-di
A/µs
/dt
F
0
0 200 400 600 800 1000
diF/dt
versus diF/dt
0.0
A/µs
fr
0.6
K/W
0.5
0.4
Z
thJH
0.3
0.2
0.1
0.0
0.001 0.01 0.1 1 10
s
Fig. 7 Transient thermal impedance junction to heatsink
D6 - 6
Constants for Z
iR
calculation:
thJH
(K/W) ti (s)
thi
1 0.037 0.002
2 0.138 0.134
3 0.093 0.25
75-12 DA
t
4 0.282 0.274
016
© 2000 IXYS All rights reserved
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