IXYS MEK350-02DA Datasheet

Fast Recovery
Epitaxial Diode
(FRED) Module

MEK 350-02 DA V

I
t

RRM

FAVM

rr

= 200 V
= 356 A
= 150 ns

V

RSM

V

RRM

Type

123

V V

200 200 MEK 350-02DA

Symbol Test Conditions Maximum Ratings
I

FRMS

I

ÿÿ

① TC = °C; rectangular, d = 0.5 A

FAVM

I

FRM

I

FSM

I2t TVJ = 45°C; t = 10 ms (50 Hz), sine A2s

T

VJ

T

stg

T

Smax

P

tot

V

ISOL

M

d

d

S

d

A

a Maximum allowable acceleration m/s
Weight g

TC = °CA

75 503
75 356

tP < 10 ms; rep. rating, pulse width limited by T

VJM

TVJ = 45°C; t = 10 ms (50 Hz), sine A

t = 8.3 ms(60 Hz), sine A

TVJ = 150°C; t = 10 ms (50 Hz), sine A

t = 8.3 ms(60 Hz), sine A

1800
2400

2640
2160

2380

A

28800

t = 8.3 ms(60 Hz), sine A2s

TVJ = 150°C; t = 10 ms (50 Hz), sine A2s

t = 8.3 ms(60 Hz), sine A2s

TC = 25°CW
50/60 Hz, RMS t = 1 min V~

I

£ 1 mA t = 1 s V~

ISOL

Mounting torque (M6) Nm/lb.in.
Terminal connection torque (M6) Nm/lb.in.

2.25-2.75/20-25

4.50-5.50/40-48

Creeping distance on surface mm
Strike distance through air mm

29300
23300

23800

-40...+150

-40...+125
110

875

3000
3600

12.7

9.6

°C
°C
°C

50

150

2

3

2

1

Features

●

International standard package
with DCB ceramic base plate

●

Planar passivated chips

●

Short recovery time

●

Low switching losses

●

Soft recovery behaviour

●

Isolation voltage 3600 V~

●

UL registered E 72873

Applications

●

Antiparallel diode for high frequency
switching devices

●

Free wheeling diode in converters
and motor control circuits

●

Inductive heating and melting

●

Uninterruptible power supplies (UPS)

●

Ultrasonic cleaners and welders

Advantages

●

High reliability circuit operation

●

Low voltage peaks for reduced
protection circuits

●

Low noise switching

●

Low losses

Symbol Test Conditions Characteristic Values (per diode)

typ. max.

I

R

V

F

V

T0

r

T

R

thJH

R

thJC

t

rr

I

RM

-di/dt = A/msT

① I

rating includes reverse blocking losses at T

FAVM

Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions

TVJ = 25°CVR= V
TVJ = 25°CVR= 0.8 • V
TVJ = 125°CVR= 0.8 • V

IF = A; TVJ=125°CV

150 0.80

IF = A; TVJ=125°CV

260 0.92

For power-loss calculations only V

RRM

RRM
RRM

TVJ=25°CV
TVJ=25°CV

0.98

1.07

0.53

1.29

DC current K/W
DC current K/W

IF = A TVJ = 100°Cns

300 150 200

VR= V TVJ = 25°CA

100 9
200 15

= 100°CA

VJ

, VR = 0.6 V

VJM

, duty cycle d = 0.5

RRM

0.228

0.143

80

mA

3

mA

2

mA

mW

© 2000 IXYS All rights reserved

Dimensions in mm (1 mm = 0.0394")

911

1 - 2

MEK 350-02 DA

400

A

350
300

I

F

250

TVJ=125°C

200

TVJ=25°C

150
100

50

0

0.0 0.4 0.8 1.2
V

F

Fig. 1 Forward current IF versus

voltage drop VF per leg

2.0

1.5

K

f

Q

r

1.0

0.5

0.0
0 50 100 150

T

VJ

Fig. 4 Dynamic parameters Qr, I

versus junction temperature T

°C

Q

3.0
µC

2.5

r

2.0

1.5

TVJ= 100°C
VR = 100V

IF= 700A
IF= 350A

I

RM

60

TVJ= 100°C

A

VR = 100V

50

40

30

IF= 700A
IF= 350A
IF= 175A

IF= 175A

1.0

0.5

0.0

V

10 100 1000

A/ms

-diF/dt

Fig. 2 Reverse recovery charge Q

versus -diF/dt

280

ns

240

t

rr

TVJ= 100°C
VR = 100V

r

IF= 700A

I

RM

200

IF= 350A
IF= 175A

160

120

80

200 600 10000 400 800

RM

Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t

VJ

-di

A/ms

/dt

F

20

10

0

200 600 10000 400 800

-di

Fig. 3 Peak reverse current I

versus -diF/dt

100

V

90
80

V

FR

t

fr

70
60
50
40
30
20
10

0

0 400 800 1200

TVJ= 125°C
IF = 350A

V

FR

diF/dt

versus diF/dt

F

/dt

A/ms

RM

4.5
µs

4.0

3.5

t

fr

3.0

2.5

2.0

1.5

1.0

0.5

0.0

A/ms

fr

0.25

K/W

0.20

0.15

Z

Z

thJH

thJS

0.10

0.05

0.00

0.001 0.01 0.1 1 10

Fig. 7 Transient thermal impedance junction to heatsink

s

t

© 2000 IXYS All rights reserved

Constants for Z

iR

calculation:

thJS

(K/W) ti (s)

thi

1 0.002 0.08
2 0.008 0.024
3 0.054 0.112
4 0.164 0.464

2 - 2