IXYS MEK300-06DA, MEE300-06DA, MEA300-06DA Datasheet
Fast Recovery
Epitaxial Diode
(FRED) Module
Preliminary data
MEA 300-06 DA
MEK 300-06 DA
MEE 300-06 DA
V
RRM
I
FAVM
t
rr
= 600 V
= 304 A
= 250 ns
V
RSM
V V
600 600
V
RRM
Type
MEA 300-06DA MEK 300-06DA MEE 300-06DA
123 123 123
Symbol Test Conditions Maximum Ratings
I
FRMS
I
ÿÿ
① TC = °C; rectangular, d = 0.5 A
FAVM
I
FRM
I
FSM
I2t TVJ = 45°C; t = 10 ms (50 Hz), sine A2s
T
VJ
T
stg
T
Smax
P
tot
V
ISOL
M
d
d
S
d
A
a Maximum allowable acceleration m/s
Weight g
75 430 A
TC = °C
75 304
tP < 10 ms; rep. rating, pulse width limited by T
VJM
TVJ = 45°C; t = 10 ms (50 Hz), sine A
t = 8.3 ms(60 Hz), sine A
TVJ = 150°C; t = 10 ms (50 Hz), sine A
t = 8.3 ms(60 Hz), sine A
1640
2400
2640
2160
2380
A
28800
t = 8.3 ms(60 Hz), sine A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine A2s
t = 8.3 ms(60 Hz), sine A2s
TC = 25°CW
50/60 Hz, RMS t = 1 min V~
I
£ 1 mA t = 1 s V~
ISOL
Mounting torque (M6) Nm/lb.in.
Terminal connection torque (M6) Nm/lb.in.
2.25-2.75/20-25
4.50-5.50/40-48
Creeping distance on surface mm
Strike distance through air mm
29300
23300
23800
-40...+150
-40...+125
110
875
3000
3600
12.7
9.6
°C
°C
°C
50
150
Symbol Test Conditions Characteristic Values (per diode)
typ. max.
I
R
V
F
V
T0
r
T
R
thJH
R
thJC
t
rr
I
RM
-di/dt = A/msT
① I
rating includes reverse blocking losses at T
FAVM
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
TVJ = 25°CVR= V
TVJ = 25°CVR= 0.8 • V
TVJ = 125°CVR= 0.8 • V
150 1.05
IF = A; TVJ=125°CV
260 1.19
IF = A; TVJ=125°CV
For power-loss calculations only V
RRM
RRM
RRM
TVJ=25°CV
TVJ=25°CV
1.27
1.36
0.85
12
80
mA
mA
3
mA
1.34 mW
DC current K/W
DC current K/W
300 250 300
IF = A TVJ = 100°Cns
300 44
VR= V TVJ = 25°CA
400 66
= 100°CA
VJ
, VR = 0.6 V
VJM
, duty cycle d = 0.5
RRM
0.228
0.143
© 2000 IXYS All rights reserved
3
2
1
Features
●
International standard package
with DCB ceramic base plate
●
Planar passivated chips
●
Short recovery time
●
Low switching losses
●
Soft recovery behaviour
●
Isolation voltage 3600 V~
●
UL registered E 72873
Applications
●
Antiparallel diode for high frequency
switching devices
●
Free wheeling diode in converters
and motor control circuits
●
Inductive heating and melting
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
High reliability circuit operation
●
2
Low voltage peaks for reduced
protection circuits
●
Low noise switching
●
Low losses
Dimensions in mm (1 mm = 0.0394")
749
1 - 2
MEA 300-06 DA MEE 300-06 DA
MEK 300-06 DA
500
A
400
I
F
300
200
TVJ=125°C
TVJ=25°C
100
0
0.0 0.4 0.8 1.2 1.6
V
F
Fig. 1 Forward current IF versus
max. voltage drop VF per leg
1.4
1.2
K
f
1.0
0.8
0.6
I
RM
Q
r
20
TVJ= 100°C
VR = 300V
µC
Q
15
r
IF= 600A
IF= 300A
10
IF= 150A
5
0
V
100 1000
A/ms
-diF/dt
Fig. 2 Typ. reverse recovery
charge Qr versus -diF/dt
400
ns
350
t
rr
300
TVJ= 100°C
VR = 300V
IF= 600A
IF= 300A
IF= 150A
200
TVJ= 100°C
VR = 300V
A
I
RM
150
IF= 600A
IF= 300A
100
IF= 150A
50
0
-di
F
A/ms
/dt
200 600 10000 400 800
Fig. 3 Typ. peak reverse current I
versus -diF/dt
60
V
t
fr
50
V
FR
40
30
20
TVJ= 100°C
IF = 300A
V
FR
RM
3.0
µs
2.5
t
fr
2.0
1.5
1.0
250
10
0.5
0.4
0 40 80 120 160
T
VJ
Fig. 4 Dynamic parameters Q
versus junction temperature T
°C
, I
r
RM
VJ
200
200 600 10000 400 800
/dt
-di
F
Fig. 5 Typ. recovery time t
versus -diF/dt
0.25
K/W
0.20
0.15
Z
Z
thJH
thJS
0.10
0.05
0.00
0.001 0.01 0.1 1 10
Fig. 7 Transient thermal impedance junction to heatsink
s
t
© 2000 IXYS All rights reserved
A/ms
rr
0
0 200 400 600 800 1000
A/ms
diF/dt
Fig. 6 Typ. peak forward voltage V
and t
versus diF/dt
fr
Constants for Z
iR
calculation:
thJS
(K/W) ti (s)
thi
1 0.002 0.08
2 0.008 0.024
3 0.054 0.112
4 0.164 0.464
0.0
FR
814
2 - 2
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