IXYS MEK300-06DA, MEE300-06DA, MEA300-06DA Datasheet

Fast Recovery
Epitaxial Diode
(FRED) Module

Preliminary data

MEA 300-06 DA
MEK 300-06 DA

MEE 300-06 DA

V

RRM

I

FAVM

t

rr

= 600 V
= 304 A
= 250 ns

V

RSM

V V
600 600

V

RRM

Type

MEA 300-06DA MEK 300-06DA MEE 300-06DA

123 123 123

Symbol Test Conditions Maximum Ratings
I

FRMS

I

ÿÿ

① TC = °C; rectangular, d = 0.5 A

FAVM

I

FRM

I

FSM

I2t TVJ = 45°C; t = 10 ms (50 Hz), sine A2s

T

VJ

T

stg

T

Smax

P

tot

V

ISOL

M

d

d

S

d

A

a Maximum allowable acceleration m/s
Weight g

75 430 A

TC = °C

75 304

tP < 10 ms; rep. rating, pulse width limited by T

VJM

TVJ = 45°C; t = 10 ms (50 Hz), sine A

t = 8.3 ms(60 Hz), sine A

TVJ = 150°C; t = 10 ms (50 Hz), sine A

t = 8.3 ms(60 Hz), sine A

1640
2400

2640
2160

2380

A

28800

t = 8.3 ms(60 Hz), sine A2s

TVJ = 150°C; t = 10 ms (50 Hz), sine A2s

t = 8.3 ms(60 Hz), sine A2s

TC = 25°CW
50/60 Hz, RMS t = 1 min V~

I

£ 1 mA t = 1 s V~

ISOL

Mounting torque (M6) Nm/lb.in.
Terminal connection torque (M6) Nm/lb.in.

2.25-2.75/20-25

4.50-5.50/40-48

Creeping distance on surface mm
Strike distance through air mm

29300
23300

23800

-40...+150

-40...+125
110

875

3000
3600

12.7

9.6

°C
°C
°C

50

150

Symbol Test Conditions Characteristic Values (per diode)

typ. max.

I

R

V

F

V

T0

r

T

R

thJH

R

thJC

t

rr

I

RM

-di/dt = A/msT

① I

rating includes reverse blocking losses at T

FAVM

Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions

TVJ = 25°CVR= V
TVJ = 25°CVR= 0.8 • V
TVJ = 125°CVR= 0.8 • V

150 1.05

IF = A; TVJ=125°CV

260 1.19

IF = A; TVJ=125°CV

For power-loss calculations only V

RRM

RRM
RRM

TVJ=25°CV
TVJ=25°CV

1.27

1.36

0.85

12
80

mA
mA

3

mA

1.34 mW

DC current K/W
DC current K/W

300 250 300

IF = A TVJ = 100°Cns

300 44

VR= V TVJ = 25°CA

400 66

= 100°CA

VJ

, VR = 0.6 V

VJM

, duty cycle d = 0.5

RRM

0.228

0.143

© 2000 IXYS All rights reserved

3

2

1

Features

●

International standard package
with DCB ceramic base plate

●

Planar passivated chips

●

Short recovery time

●

Low switching losses

●

Soft recovery behaviour

●

Isolation voltage 3600 V~

●

UL registered E 72873

Applications

●

Antiparallel diode for high frequency
switching devices

●

Free wheeling diode in converters
and motor control circuits

●

Inductive heating and melting

●

Uninterruptible power supplies (UPS)

●

Ultrasonic cleaners and welders

Advantages

●

High reliability circuit operation

●

2

Low voltage peaks for reduced
protection circuits

●

Low noise switching

●

Low losses

Dimensions in mm (1 mm = 0.0394")

749

1 - 2

MEA 300-06 DA MEE 300-06 DA
MEK 300-06 DA

500

A

400

I

F

300

200

TVJ=125°C
TVJ=25°C

100

0

0.0 0.4 0.8 1.2 1.6
V

F

Fig. 1 Forward current IF versus

max. voltage drop VF per leg

1.4

1.2

K

f

1.0

0.8

0.6

I

RM

Q

r

20

TVJ= 100°C
VR = 300V

µC

Q

15

r

IF= 600A
IF= 300A

10

IF= 150A

5

0

V

100 1000

A/ms

-diF/dt

Fig. 2 Typ. reverse recovery

charge Qr versus -diF/dt

400

ns

350

t

rr

300

TVJ= 100°C
VR = 300V

IF= 600A
IF= 300A
IF= 150A

200

TVJ= 100°C
VR = 300V

A

I

RM

150

IF= 600A
IF= 300A

100

IF= 150A

50

0

-di

F

A/ms

/dt

200 600 10000 400 800

Fig. 3 Typ. peak reverse current I

versus -diF/dt

60

V

t

fr

50

V

FR

40

30

20

TVJ= 100°C
IF = 300A

V

FR

RM

3.0
µs

2.5

t

fr

2.0

1.5

1.0

250

10

0.5

0.4
0 40 80 120 160

T

VJ

Fig. 4 Dynamic parameters Q

versus junction temperature T

°C

, I

r

RM

VJ

200

200 600 10000 400 800

/dt

-di

F

Fig. 5 Typ. recovery time t

versus -diF/dt

0.25

K/W

0.20

0.15

Z

Z

thJH

thJS

0.10

0.05

0.00

0.001 0.01 0.1 1 10

Fig. 7 Transient thermal impedance junction to heatsink

s

t

© 2000 IXYS All rights reserved

A/ms

rr

0

0 200 400 600 800 1000

A/ms

diF/dt

Fig. 6 Typ. peak forward voltage V

and t

versus diF/dt

fr

Constants for Z

iR

calculation:

thJS

(K/W) ti (s)

thi

1 0.002 0.08
2 0.008 0.024
3 0.054 0.112
4 0.164 0.464

0.0

FR

814

2 - 2