IXYS MEE250-12DA, MEA250-12DA Datasheet
Fast Recovery
Epitaxial Diode
(FRED) Module
MEA 250-12 DA
MEK 250-12 DA
MEE 250-12 DA
Preliminary data
V
RSM
V V
1200 1200
V
RRM
Type
MEA 250-12DA MEK 250-12DA MEE 250-012DA
123 123 123
Symbol Test Conditions Maximum Ratings
I
FRMS
I
ÿÿ
① TC = °C; rectangular, d = 0.5 A
FAVM
I
FRM
I
FSM
I2t TVJ = 45°C; t = 10 ms (50 Hz), sine A2s
T
VJ
T
stg
T
Smax
P
tot
V
ISOL
M
d
d
S
d
A
a Maximum allowable acceleration m/s
Weight g
75 367
TC = °CA
75 260
tP < 10 ms; rep. rating, pulse width limited by T
VJM
TVJ = 45°C; t = 10 ms (50 Hz), sine A
t = 8.3 ms(60 Hz), sine A
TVJ = 150°C; t = 10 ms (50 Hz), sine A
t = 8.3 ms(60 Hz), sine A
1480
2400
2640
2160
2380
A
28800
t = 8.3 ms(60 Hz), sine A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine A2s
t = 8.3 ms(60 Hz), sine A2s
Tc = 25°CW
50/60 Hz, RMS t = 1 min V~
I
£ 1 mA t = 1 s V~
ISOL
Mounting torque (M6) Nm/lb.in.
Terminal connection torque (M6) Nm/lb.in.
2.25-2.75/20-25
4.50-5.50/40-48
Creeping distance on surface mm
Strike distance through air mm
29300
23300
23800
-40...+150
-40...+125
110
875
3000
3600
12.7
9.6
°C
°C
°C
50
150
2
V
I
FAVM
t
rr
RRM
= 1200 V
= 260 A
= 450 ns
2
1
3
Features
●
International standard package
with DCB ceramic base plate
●
Planar passivated chips
●
Short recovery time
●
Low switching losses
●
Soft recovery behaviour
●
Isolation voltage 3600 V~
●
UL registered E 72873
Applications
●
Antiparallel diode for high frequency
switching devices
●
Free wheeling diode in converters
and motor control circuits
●
Inductive heating and melting
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
High reliability circuit operation
●
Low voltage peaks for reduced
protection circuits
●
Low noise switching
●
Low losses
Symbol Test Conditions Characteristic Values (per diode)
typ. max.
I
R
V
F
V
T0
r
T
R
thJH
R
thJC
t
rr
I
RM
-di/dt = A/msT
① I
rating includes reverse blocking losses at T
FAVM
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
TVJ = 25°CVR= V
TVJ = 25°CVR= 0.8 • V
TVJ = 125°CVR= 0.8 • V
150 1.38
IF = A; TVJ=125°CV
260 1.54
IF = A; TVJ=125°CV
For power-loss calculations only V
RRM
RRM
RRM
TVJ=25°CV
TVJ=25°CV
1.69
1.80
1.16
1.46
DC current K/W
DC current K/W
300 450 500
IF = A TVJ = 100°Cns
600 55
VR= V TVJ = 25°CA
400 83
= 100°CA
VJ
, VR = 0.6 V
VJM
, duty cycle d = 0.5
RRM
0.228
0.143
12
60
mA
mA
3
mA
mW
© 2000 IXYS All rights reserved
Dimensions in mm (1 mm = 0.0394")
749
1 - 2
MEA 250-12 DA MEE 250-12 DA
MEK 250-12 DA
500
A
450
400
I
350
F
300
250
TVJ=125°C
TVJ= 25°C
200
150
100
50
0
0.00.51.01.52.02.5
V
F
Fig. 1 Forward current IF versus
voltage drop VF per leg
1.4
1.2
K
f
1.0
0.8
0.6
I
RM
Q
r
0.4
0.2
0 40 80 120 160
T
VJ
Fig. 4 Dynamic parameters Qr, I
versus junction temperature T
°C
80
TVJ= 100°C
µC
VR = 600V
70
Q
60
r
IF= 300A; max.
IF= 300A; typ.
50
IF= 250A; typ.
IF= 125A; typ.
40
30
20
10
0
V
100 1000
A/ms
-diF/dt
Fig. 2 Reverse recovery charge Q
versus -diF/dt
1200
ns
TVJ= 100°C
VR = 600V
r
1000
t
rr
800
IF= 300A; max.
IF= 300A; typ.
IF= 250A; typ.
600
IF= 125A; typ.
400
200
200
TVJ= 100°C
A
180
VR = 600V
160
I
IF= 300A; max.
RM
IF= 300A; typ.
140
IF= 250A; typ.
120
IF= 125A; typ.
100
80
60
40
20
0
200 600 10000 400 800
-di
Fig. 3 Peak reverse current I
versus -diF/dt
100
A
V
90
80
V
FR
70
t
fr
60
50
40
30
20
TVJ= 125°C
IF = 260A
V
A/ms
/dt
F
RM
2.5
µs
2.0
FR
t
fr
1.5
1.0
0.5
10
0
200 600 10000 400 800
RM
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t
VJ
-di
A/ms
/dt
F
0
0 400 800 1200
diF/dt
versus diF/dt
0.0
A/ms
fr
0.25
K/W
0.20
Z
Z
thJH
thJS
0.15
0.10
0.05
0.00
0.001 0.01 0.1 1 10
Fig. 7 Transient thermal impedance junction to heatsink
s
t
© 2000 IXYS All rights reserved
Constants for Z
iR
calculation:
thJS
(K/W) ti (s)
thi
1 0.002 0.08
2 0.008 0.024
3 0.054 0.112
4 0.164 0.464
2 - 2
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