IXYS MDO500-18N1, MDO500-20N1, MDO500-22N1, MDO500-14N1, MDO500-16N1 Datasheet
MDO 500
High Power
Diode Modules
V
RSM
V
DSM
V
RRM
V
DRM
Type
VV
1300 1200 MDO 500-12N1
1500 1400 MDO 500-14N1
1700 1600 MDO 500-16N1
1900 1800 MDO 500-18N1
2100 2000 MDO 500-20N1
2300 2200 MDO 500-22N1
Symbol Test Conditions Maximum Ratings
T
I
FRMS
I
FAVM
I
FSM
2
t T
I
T
VJ
T
VJM
T
stg
V
ISOL
M
d
= T
VJ
VJM
TC = 85°C; 180° sine A
T
= 45°C t = 10 ms (50 Hz) A
VJ
VR = 0 t = 8.3 ms (60 Hz) A
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz) A
= 45°C t = 10 ms (50 Hz) A2s
VJ
VR = 0 t = 8.3 ms (60 Hz) A2s
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz) A2s
t = 10 ms (50 Hz) A
t = 10 ms (50 Hz) A2s
50/60 Hz, RMS t = 1 min V~
£ 1 mA t = 1 s V~
I
ISOL
Mounting torque (M6) Nm/lb.in.
Terminal connection torque (M8) Nm/lb.in.
Weight Typical including screws g
32
880
A
560
15000
16000
13000
14400
1125000
1062000
845000
813000
-40...140
140
-40...125
°C
°C
°C
3000
3600
4.5-7/40-62
11-13/97-115
650
I
FRMS
I
FAVM
V
= 880 A
= 560 A
= 1200-2200 V
RRM
3
2
Features
●
International standard package
●
Direct copper bonded Al2O3-ceramic
with copper base plate
●
Planar passivated chips
●
Isolation voltage 3600 V~
●
UL registered E 72873
Applications
●
Supplies for DC power equipment
●
DC supply for PWM inverter
●
Field supply for DC motors
●
Battery DC power supplies
Advantages
●
Simple mounting
●
Improved temperature and power
cycling
●
Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
Symbol Test Conditions Characteristic Values
I
RRM
V
F
V
T0
r
T
R
thJC
R
thJK
d
S
d
A
a Maximum allowable acceleration m/s
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
TVJ= T
IF= A; T
For power-loss calculations only (T
DC current K/W
DC current K/W
Creeping distance on surface mm
Creepage distance in air mm
; VR = V
VJM
1200 1.3
RRM
= 25°CV
VJ
= T
VJ
)V
VJM
30
0.8
0.38
0.072
0.096
21.7
9.6
mA
mW
50
© 2000 IXYS All rights reserved
2
1 - 3
MDO 500
14000
I
TSM
12000
A
10000
8000
6000
4000
2000
0
0.001 0.01 0.1 1
Fig. 1 Surge overload current
I
: Crest value, t: duration
FSM
1200
P
tot
W
1000
800
600
400
200
50 Hz
80 % V
RRM
TVJ = 45°C
= 140°C
T
VJ
s
DC
180° sin
120°
60°
30°
7
10
VR = 0V
I2t
A2s
TVJ = 45°C
6
10
TVJ = 140°C
5
10
t
110
ms
t
Fig. 2 I2t versus time (1-10 ms) Fig. 3 Maximum forward current
1000
A
900
I
FAVM
800
700
600
500
400
300
200
100
0
0 25 50 75 100 125 150
DC
180° sin
120°
60°
30°
T
C
°C
at case temperature
R
thKA
0.03
0.07
0.12
0.2
0.3
0.4
0.6
K/W
Fig. 4 Power dissipation versus
forward current and ambient
temperature
0
0 200 400 600 800
3200
W
2800
P
tot
2400
2000
1600
1200
800
400
0
0 300 600 900 1200
RL
Circuit
B2
4xMDO500
I
0 25 50 75 100 125 150
A
FAVM
0 25 50 75 100 125 150
A
I
dAVM
°C
R
thKA
0.015
0.03
0.04
0.05
0.07
0.01
0.14
°C
T
A
K/W
T
Fig. 5 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
A
© 2000 IXYS All rights reserved
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