IXYS MDD312-12N1, MDD312-14N1, MDD310-12N1, MDD310-14N1, MDD310-16N1 Datasheet
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© 2000 IXYS All rights reserved
1 - 3
V
RSM
V
RRM
Type
V
DSM
V
DRM
VV
1300 1200 MDD 312-12N1
1500 1400 MDD 312-14N1
1700 1600 MDD 312-16N1
1900 1800 MDD 312-18N1
2100 2000 MDD 312-20N1
2300 2200 MDD 312-22N1
I
FRMS
= 2x 520 A
I
FAVM
= 2x 310 A
V
RRM
= 1200-2200 V
Features
●
International standard package
●
Direct copper bonded Al2O3-ceramic
with copper base plate
●
Planar passivated chips
●
Isolation voltage 3600 V~
●
UL registered E 72873
Applications
●
Supplies for DC power equipment
●
DC supply for PWM inverter
●
Field supply for DC motors
●
Battery DC power supplies
Advantages
●
Simple mounting
●
Improved temperature and power
cycling
●
Reduced protection circuits
Symbol Test Conditions Maximum Ratings
I
FRMS
TVJ = T
VJM
520 A
I
FAVM
TC = 100°C; 180° sine 310 A
I
FSM
TVJ = 45°C; t = 10 ms (50 Hz) 10500 A
VR = 0 t = 8.3 ms (60 Hz) 11200 A
T
VJ
= T
VJM
t = 10 ms (50 Hz) 9200 A
VR = 0 t = 8.3 ms (60 Hz) 9800 A
òi
2
dt TVJ = 45°C t = 10 ms (50 Hz) 551000 A2s
VR = 0 t = 8.3 ms (60 Hz) 527000 A2s
T
VJ
= T
VJM
t = 10 ms (50 Hz) 423 000 A2s
VR = 0 t = 8.3 ms (60 Hz) 403 000 A2s
T
VJ
-40...+150 °C
T
VJM
150 °C
T
stg
-40...+125 °C
V
ISOL
50/60 Hz, RMS t = 1 min 3000 V~
I
ISOL
£ 1 mA t = 1 s 3600 V~
M
d
Mounting torque (M6) 4.5-7/40-62 Nm/lb.in.
Terminal connection torque (M8) 11-13/97-115 Nm/lb.in.
Weight Typical including screws 750 g
Symbol Test Conditions Characteristic Values
I
RRM
TVJ= T
VJM
; VR = V
RRM
30 mA
V
F
IF = 600 A; TVJ = 25°C 1.32 V
V
T0
For power-loss calculations only 0.8 V
r
T
TVJ= T
VJM
0.6 mW
R
thJC
per diode; DC current 0.12 K/W
per module 0.06 K/W
R
thJK
per diode; DC current 0.16 K/W
per module 0.08 K/W
Q
S
TVJ = 125°C; IF = 400 A; -di/dt = 50 A/ms 700 mC
I
RM
260 A
d
S
Creeping distance on surface 12.7 mm
d
A
Creepage distance in air 9.6 mm
a Maximum allowable acceleration 50 m/s
2
MDD 312
749
High Power
Diode Modules
312
1
2
3
Dimensions in mm (1 mm = 0.0394")
M8x20
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
2 - 3
0 25 50 75 100 125 1500 100 200 300 400 500
0
100
200
300
400
500
600
0 25 50 75 100 125 150
110
10
5
10
6
0.001 0.01 0.1 1
0
2000
4000
6000
8000
10000
0 100 200 300 400 500 600
0
250
500
750
1000
1250
1500
1750
I2t
I
FAVM
I
dAVM
A
P
tot
W
T
A
T
C
s
t
ms
t
A2s
0 255075100125150
0
50
100
150
200
250
300
350
400
450
500
550
I
FSM
A
A
°C
I
FAVM
W
P
tot
A °C
0.6
0.8
0.1
0.2
0.3
0.4
R
thKA
K/W
0.06
0.12
0.06
0.04
°C
2 x MDD312
Circuit
B2U
T
A
R
thKA
K/W
180° sin
120°
60°
30°
DC
180° sin
120°
60°
30°
DC
VR = 0V
80 % V
RRM
TVJ = 45°C
T
VJ
= 150°C
50 Hz
TVJ = 150°C
T
VJ
= 45°C
R
L
0.5
0.08
0.2
0.3
MDD 312
Fig. 1 Surge overload current
I
FSM
: Crest value, t: duration
Fig. 2 I2t versus time (1-10 ms) Fig. 3 Maximum forward current
at case temperature
Fig. 4 Power dissipation versus
forward current and ambient
temperature (per diode)
Fig. 5 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
808
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