IXYS MCD161-22IO1, MCD161-20IO1, MCC161-22IO1, MCC161-20IO1 Datasheet

MCC 161 MCD 161
High V oltage Thyristor Module High V oltage High Voltage
V
RSM
V
DSM
VV
2100 2000 MCC 161-20io1 MCD 161-20io1 2300 2200 MCC 161-22io1 MCD 161-22io1
Symbol Test Conditions Maximum Ratings I
TRMS
I
TAVM
I
TSM
2
dt TVJ = 45°C t = 10 ms (50 Hz) A2s
òi
(di/dt)
(dv/dt)
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight Typical including screws g
V
RRM
V
DRM
Type
TVJ = T
TC = 85°C; 180° sine A TVJ = 45°C; t = 10 ms (50 Hz) A
VR = 0 t = 8.3 ms (60 Hz) A
= T
T
VJ
VR = 0 t = 8.3 ms (60 Hz) A
t = 10 ms (50 Hz) A
300 165
6000 6400
5250 5600
A
180000
VR = 0 t = 8.3 ms (60 Hz) A2s
= T
T
VJ
VR = 0 t = 8.3 ms (60 Hz) A2s
cr
TVJ = T
f = 50 Hz, tP = 200 ms VD = 2/3 V IG= A, non repetitive, IT = I diG/dt = A/ms
TVJ = T
cr
RGK = ¥; method 1 (linear voltage rise) TVJ = T
IT = I
0.5 500
0.5 ; VDR = 2/3 V
TAVM
t = 10 ms (50 Hz) A2s
repetitive, IT =A A/ms
DRM
DRM
500 150
TAVM
tP = 30 msW tP = 500 msW
50/60 Hz, RMS t = 1 min V~
£ 1 mA t = 1 s V~
I
ISOL
Mounting torque (M6) Nm/lb.in.
2.25-2.75/20-25
Terminal connection torque (M6) Nm/lb.in.
170000 137000
128000
1000
120
60 10
-40 ...125 125
-40 ...125
3000 3600
4.5-5.5/40-48
A/ms
V/ms
8
W
V
°C °C °C
125
I
TRMS
I
TAVM
V
= 2x 300 A = 2x 165 A = 2000-2200 V
RRM
2
1
3671542
7
6
3
MCC
31542
MCD
Features
International standard package
Direct Copper Bonded Al2O3 -ceramic base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
Keyed gate/cathode twin pins
Applications
Motor control
Power converter
Heat and temperature control for industrial furnaces and chemical processes
Lighting control
Contactless switches
Advantages
Space and weight savings
Simple mounting
Improved temperature and power cycling
Reduced protection circuits
4
5
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1 - 2
Symbol Test Conditions Characteristic Values
, I
I
RRM
DRM
V
T
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a Maximum allowable acceleration m/s
TVJ= T IT=A; T For power-loss calculations only (TVJ = T
VD= 6 V; TVJ = 25°CV VD= 6 V; TVJ = 25°CmA
TVJ= T TVJ= T
; VR = V
300 1.36
RRM
= 25°CV
VJ
)V
40
0.8
1.6
mA
mW
2
TVJ = -40°CV
2.6
150
TVJ = -40°CmA
;VD = 2/3 V
;VD = 2/3 V
DRM DRM
200
0.25
10
V
mA
TVJ = 25°C; VD = 6 V; tP = 30 ms 200 mA diG/dt = 0.45A/ms; IG = 0.45 A
TVJ= 25°C; VD = 6 V; RGK = ¥ mA TVJ= 25°C; VD = 1/2 V
diG/dt = A/ms; IG = A TVJ = T
dv/dt = 20 V/ms; IT = 160 A; -di/dt = 10A/ms TVJ= T
-di/dt = A/ms; IT =A A
0.5 0.5 ; VR = 100 V; VD = 2/3 V
VJM
50 300 235
DRM
; tP = 200 ms typ. 150 ms
DRM
per thyristor; DC current K/W per module K/W per thyristor; DC current K/W per module K/W
Creeping distance on surface mm Creepage distance in air mm
150
550
0.155
0.078
0.225
0.113
12.7
9.6
2
ms
mC
50
MCC 161 MCD 161
Fig. 1 Gate trigger characteristics
2
Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1
R
Dimensions in mm (1 mm = 0.0394")
for various conduction angles d:
thJC
d R
thJC
(K/W)
DC 0.155
180° 0.167 120° 0.175
60° 0.197 30° 0.226
Constants for Z
iR
calculation:
thJC
(K/W) ti (s)
thi
1 0.0072 0.001 2 0.0188 0.08 3 0.129 0.2
Fig. 2 Gate trigger delay time
R
for various conduction angles d:
thJK
d R
thJK
(K/W)
DC 0.225
180° 0.237 120° 0.245
60° 0.262 30° 0.296
Constants for Z
iR
calculation:
thJK
(K/W) ti (s)
thi
1 0.0072 0.001 2 0.0188 0.08 3 0.129 0.2 4 0.07 1.0
© 2000 IXYS All rights reserved
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