IXYS IXUC120N10 Datasheet
ADVANCE TECHNICAL INFORMATION
Trench Power MOSFET IXUC 120N10 V
ISOPLUS220
Electrically Isolated Back Surface R
Symbol Test Conditions Maximum Ratings
T
V
DSS
V
GS
I
D25
I
D90
I
S25
I
S90
I
D(RMS)
E
AS
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
F
C
Weight 2 g
Symbol Test Conditions Characteristic Values
R
DS(on)
V
GS(th)
I
DSS
I
GSS
= 25°C to 150°C 100 V
J
Continuous ±20 V
T
= 25°C; Note 1 120 A
C
T
= 90°C, Note 1 90 A
C
T
= 25°C; Note 1, 2 120 A
C
T
= 90°C, Note 1, 2 90 A
C
Package lead current limit 45 A
T
= 25°C tlb mJ
C
T
= 25°C 300 W
C
1.6 mm (0.062 in.) from case for 10 s 300 °C
RMS leads-to-tab, 50/60 Hz, t = 1 minute 2500 V~
Mounting force 11 ... 65 / 2.4 ...11 N/lb
VGS= 10 V, I
= 10 V, ID = I
V
GS
VDS= VGS, ID = 2 mA 2 4 V
VDS= V
= 0 V T
V
GS
V
= ±20 V
GS
TM
-55 ... +175 °C
175 °C
-55 ... +150 °C
= 25°C, unless otherwise specified)
(T
J
= 90 A, Note 3 7.3 9.5 mΩ
D
DSS
,T
D90
, V
= 0 ±200 nA
DC
DS
= 125°C Note 3 18 mΩ
J
T
= 25°C20µA
J
= 125°C 0.2 mA
J
min. typ. max.
I
ISOPLUS 220
G
D
G = Gate, D = Drain,
S = Source
* Patent pending
Features
l Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l Trench MOSFET
- very low R
- fast switching
- usable intrinsic reverse diode
l Low drain to tab capacitance(<15pF)
l Unclamped Inductive Switching (UIS)
rated
Applications
l Automotive 42V systems
- electronic switches to replace relays
and fuses
- choppers to replace series dropping
resistors used for motors, heaters, etc.
- inverters for AC drives, e.g. starter
generator
- DC-DC converters, e.g. 12V to 42V, etc.
l Power supplies
- DC - DC converters
- Solar inverters
l Battery powered systems
- choppers or inverters for motor control
in hand tools
- battery chargers
Advantages
l Easy assembly: no screws or isolation
foils required
l Space savings
l High power density
DSS
D25
DS(on)
S
= 100 V
= 120 A
= 9.5 m
TM
Isolated back surface*
DS(on)
ΩΩ
Ω
ΩΩ
© 2002 IXYS All rights reserved
98901 (2/02)
IXUC 120N10
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
Q
Q
Q
t
t
t
t
R
R
g(on)
gs
gd
d(on)
r
d(off)
f
thJC
thCH
J
VGS= 10 V, VDS = 80 V, ID = 50 A 36 nC
VGS= 10 V, VDS = 40 A 85 ns
ID = 90 A, R
= 4.7 Ω 150 ns
G
min. typ. max.
220 nC
88 nC
35 ns
70 ns
0.5 K/W
0.30 K/W
Source-Drain Diode Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
SD
t
rr
IF = 60 A, VGS = 0 V 0.9 1.4 V
Note 3
I
= 75 A, di/dt = -200 A/µs, V
F
J
= 30 V 80 ns
DS
ISOPLUS220 OUTLINE
Note: 1. MOSFET chip capability
2. Intrinsic diode capability
3. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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