IXYS IXUC100N055 Datasheet
© 2001 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
TJ= 25°C to 150°C55V
V
GS
Continuous ±20 V
I
D25
TC= 25°C; Note 1 100 A
I
D90
TC= 90°C, Note 1 80 A
I
S25
TC= 25°C; Note 1, 2 100 A
I
S90
TC= 90°C, Note 1, 2 70 A
I
D(RMS)
Package lead current limit 50 A
E
AS
TC= 25°C 500 mJ
P
D
TC= 25°C 150 W
T
J
-55 ... +175 °C
T
JM
175 °C
T
stg
-55 ... +125 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 300 °C
V
ISOL
RMS leads-to-tab, 50/60 Hz, t = 1 minute 2500 V~
F
C
Mounting force with clips 11 ... 65 / 2.4 ...11 N/lb
Weight 2g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
R
DS(on)
VGS= 10 V, ID = I
D90
, Note 3 6.1 7.7 mΩ
V
GS(th)
VDS= VGS, ID = 1 mA 2 4 V
I
DSS
VDS= V
DSS
10 µA
V
GS
= 0 V TJ = 125°C 0.1 mA
I
GSS
VGS= ±20 VDC, VDS = 0 ±200 nA
G = Gate, D = Drain,
S = Source
* Patent pending
Trench Power MOSFET IXUC100N055 V
DSS
= 55 V
ISOPLUS220
TM
I
D25
= 100 A
Electrically Isolated Back Surface R
DS(on)
= 7.7 m
ΩΩ
ΩΩ
Ω
98760 (05/01)
G
D
S
ADVANCE TECHNICAL INFORMATION
ISOPLUS220
TM
Features
l Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l Trench MOSFET
- very low R
DS(on)
- fast switching
- usable intrinsic reverse diode
l Low drain to tab capacitance(<15pF)
l Unclamped Inductive Switching (UIS)
rated
Applications
l Automotive 42V and 12V systems
- electronic switches to replace relays
& fuses
- choppers to replace series dropping
resistors used for motors, heaters, etc.
- inverters for AC drives
- DC-DC converters, e.g. 12V to 42V, etc.
l Power supplies
- DC - DC converters
- Solar inverters
l Battery powered systems
- choppers or inverters for motor control in
hand tools
- battery chargers
Advantages
l Easy assembly: no screws or isolation
foils required
l Space savings
l High power density
Isolated back surface*
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
Q
g(on)
100 nC
Q
gs
VGS= 10 V, VDS = 14 V, ID = 50 A 22 nC
Q
gd
36 nC
t
d(on)
35 ns
t
r
VGS= 10 V, VDS = 0.5 • V
DSS
, 115 ns
t
d(off)
ID = 25 A, RG = 10 Ω 230 ns
t
f
155 ns
R
thJC
1 K/W
R
thCH
0.30 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
SD
IF = 50 A, VGS = 0 V 0.9 1.5 V
Note 3
t
rr
IF = 75A, di/dt = -100A/µs, VDS = 30 V 80 ns
Note: 1. MOSFET chip capability
2. Intrinsic diode capability
3. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXUC100N055
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
ISOPLUS220 OUTLINE
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