IXYS IXTY01N100, IXTU01N100 Datasheet
High Voltage MOSFET
N-Channel, Enhancement Mode
IXTU 01N100
IXTY 01N100
V
I
D25
R
DSS
DS(on)
= 1000 V
= 100mA
= 80
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
01N100
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
T
L
TJ= 25°C to 150°C 1000 V
TJ= 25°C to 150°C; R
= 1 MΩ 1000 V
GS
Continuous ±20 V
Transient ±30 V
TC= 25°C; TJ = 25°C to 150°C 100 mA
TC= 25°C, pulse width limited by max. T
J
400 mA
TC= 25°C 25 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.063 in) from case for 5 s 300 °C
Weight 0.8 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
V
I
I
R
GSS
DSS
DSS
GS(th)
DS(on)
VGS= 0 V, I
VDS= VGS, I
= 25 µA 1000 V
D
= 25 µA24.5V
D
VGS= ±20 VDC, VDS = 0 ±50 nA
VDS= 0.8 V
VGS= 0 V T
VGS= 10 V, ID = I
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 %
DSS
D25
T
= 25°C 10 µA
J
= 125°C 200 µA
J
60 80 Ω
TO-251 AA
G
D
S
TO-252 AA
G
S
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
l
International standard packages
JEDEC TO-251 AA, TO-252 AA
l
Low R
l
V
l
DS (on)
Rugged polysilicon gate cell structure
Fast switching times
Applications
l
Level shifting
l
Triggers
l
Solid state relays
l
Current regulators
D (TAB)
D (TAB)
HDMOSTM process
© 2001 IXYS All rights reserved
98812B (11/01)
IXTU 01N100
IXTY 01N100
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
J
VDS= 10 V; ID = 0.5 I
, pulse test 140 mS
D25
VGS= 0 V, VDS = 25 V, f = 1 MHz 7.5 pF
VGS= 10 V, VDS = 500 V, ID = I
R
= 50 Ω (External) 28 ns
G
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
min. typ. max.
60 pF
1.8 pF
12 ns
12 ns
28 ns
8nC
D25
1.8 nC
3nC
3 K/W
Source-Drain Diode Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
J
TO-251 AA Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 .086 .094
A1 0.89 1.14 0.35 .045
b 0.64 0.89 .025 .035
b1 0.76 1.14 .030 .045
b2 5.21 5.46 .205 .215
c 0.46 0.58 .018 .023
c1 0.46 0.58 .018 .023
D 5.97 6.22 .235 .245
E 6.35 6.73 .250 .265
e 2.28 BSC .090 B SC
e1 4.57 BSC .180 BSC
H 17.02 17.78 .670 .700
L 8.89 9.65 .350 .380
L1 1.91 2.28 .075 .090
L2 0.89 1.27 .035 .050
L3 1.15 1.52 .045 .060
TO-252 AA
1. Gate
2. Drain
3. Source
4. Drain
Back heatsink
V
SD
t
rr
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
IF = 100 mA, VGS = 0 V, 1.8 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
= 0.75 A, -di/dt = 10 A/µs, 1.5 µs
F
VDS = 25 V
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
1 Anode
2 NC
3 Anode
4 Cathode
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2 0 0.13 0 0.005
b 0.64 0.89 0.025 0.035
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
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