IXYS IXTQ 110N10P, IXTT 110N10P Service Manual
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Advance Technical Information
PolarHT
TM
IXTQ 110N10P V
IXTT 110N10P I
Power MOSFET
R
N-Channel Enhancement Mode
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
TJ= 25°C to 175°C 100 V
TJ= 25°C to 175°C; RGS = 1 MΩ 100 V
±20 V
TC= 25°C 110 A
External lead current limit 75 A
TC= 25°C, pulse width limited by T
JM
250 A
TC= 25°C60A
TC= 25°C40mJ
TC= 25°C 1.0 J
DSS
D25
DS(on)
= 100 V
= 110 A
=15m
TO-3P (IXTQ)
G
D
S
TO-268 (IXTT)
ΩΩ
Ω
ΩΩ
(TAB)
dv/dt I
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
, 10 V/ns
DSS
TJ≤ 150°C, RG = 4 Ω
P
D
T
J
T
JM
T
stg
T
L
M
d
TC= 25°C 480 W
-55 ... +175 °C
175 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
Mounting torque (TO-3P) 1.13/10 Nm/lb.in.
Weight TO-3P 5.5 g
TO-268 5.0 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
V
V
I
I
DSS
GS(th)
GSS
DSS
VGS= 0 V, ID = 250 µA 100 V
VDS= VGS, ID = 250µA 2.5 5.0 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
DSS
25 µA
VGS= 0 V TJ = 150°C 250 µA
R
DS(on)
VGS= 10 V, ID = 0.5 I
D25
15 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
G
S
G = Gate D = Drain
S = Source TAB = Drain
D (TAB)
Features
z
International standard packages
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
© 2004 IXYS All rights reserved
DS99132(05/04)
IXTQ 110N10P
IXTT 110N10P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 I
, pulse test 30 40 S
D25
3550 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 1370 pF
440 pF
21 ns
VGS = 10 V, VDS = 0.5 V
, ID = 60 A 25 ns
DSS
RG = 4 Ω (External) 65 ns
25 ns
110 nC
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
25 nC
62 nC
0.31 K/W
(TO-3P) 0.21 K/W
Source-Drain Diode Characteristic Values
(T
Symbol Test Conditions Min. typ. Max.
= 25°C, unless otherwise specified)
J
TO-3P (IXTQ) Outline
I
S
I
SM
V
SD
VGS = 0 V 110 A
Repetitive 250 A
IF = IS, VGS = 0 V, 1.5 V
TO-268 Outline
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
IF = 25 A 130 ns
-di/dt = 100 A/µs
Q
RM
VR = 50 V 2.0 µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,381,025 6,162,665 6,306,728 B1 6,534,343 6,683,344
one or moreof the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,486,715 6,259,123 B1 6,404,065 B1 6,583,505 6,710,405B2
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