IXYS IXTQ 82N25P Service Manual
查询IXTK82N25P供应商
PolarHT
TM
IXTQ 82N25P V
IXTT 82N25P I
Power MOSFET
IXTK 82N25P
N-Channel Enhancement Mode
Preliminary Data Sheet
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight TO-3P 5.5 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
TJ= 25°C to 150°C 250 V
TJ= 25°C to 150°C; RGS = 1 MΩ 250 V
±20 V
TC= 25°C82A
External lead current limit 75 A
TC= 25°C, pulse width limited by T
JM
250 A
TC= 25°C60A
TC= 25°C40mJ
TC= 25°C 1.0 J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
, 10 V/ns
DSS
TJ≤ 150°C, RG = 4 Ω
TC= 25°C 500 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.
TO-264 10 g
TO-268 5.0 g
= 250 V
=82 A
=35m
R
DSS
D25
DS(on)
TO-264 (IXTK)
G
D
S
(TAB)
TO-3P (IXTQ)
G
D
S
(TAB)
TO-268 (IXTT)
G
S
G = Gate D = Drain
S = Source TAB = Drain
D (TAB)
Features
z
International standard packages
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
ΩΩ
Ω
ΩΩ
V
V
I
I
DSS
GS(th)
GSS
DSS
VGS= 0 V, ID = 250 µA 250 V
VDS= VGS, ID = 250µA 2.5 5.0 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
DSS
VGS= 0 V TJ = 125°C 250 µA
R
DS(on)
VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
D25
25 µA
35 mΩ
Advantages
z
Easy to mount
z
Space savings
z
High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
DS99121B(04/04)
IXTK 82N25P IXTQ 82N25P
IXTT 82N25P
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
J
Min. Typ. Max.
4800 pF
210 pF
29 ns
22 ns
142 nC
D25
32 nC
74 nC
0.25 K/W
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCH
(T
VDS= 10 V; ID = 0.5 I
, pulse test 30 52 S
D25
VGS = 0 V, VDS = 25 V, f = 1 MHz 900 pF
VGS = 10 V, VDS = 0.5 V
, ID = 60 A 20 ns
DSS
RG = 4 Ω (External) 78 ns
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
TO-3P 0.21 K/W
TO-264 0.15 K/W
Source-Drain Diode Characteristic Values
(T
Symbol Test Conditions Min. typ. Max.
= 25°C, unless otherwise specified)
J
TO-3P Outline
I
S
I
SM
V
SD
VGS = 0 V 82 A
Repetitive 250 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
IF = 25 A 200 ns
-di/dt = 100 A/µs
Q
RM
VR = 100 V 2.0 µC
TO-264 AA Outline
TO-268 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
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