IXYS IXTQ 75N10P Service Manual

查询IXTA75N10P供应商

Advanced Technical Information

PolarHT

TM

Power MOSFET

IXTQ 75N10P
IXTA 75N10P
IXTP 75N10P

N-Channel Enhancement Mode

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GSM

I

D25

I

DM

I

AR

E

AR

E

AS

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

M

d

Weight TO-3P 5.5 g

Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

V

DSS

V

GS(th)

I

GSS

I

DSS

R

DS(on)

TJ= 25°C to 175°C 100 V
TJ= 25°C to 175°C; RGS = 1 MΩ 100 V

±20 V

TC= 25°C75A
TC= 25°C, pulse width limited by T

JM

200 A

TC= 25°C50A

TC= 25°C30mJ

TC= 25°C 1.0 J

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

S

, 10 V/ns

DSS

TJ≤ 150°C, RG = 10 Ω

TC= 25°C 300 W

-55 ... +150 °C
150 °C

-55 ... +150 °C

1.6 mm (0.062 in.) from case for 10 s 300 °C
Maximum tab temperature for soldering 260 °C
TO-263 package for 10s

Mounting torque (TO-3P / TO-220) 1.13/10 Nm/lb.in.

TO-220 4 g
TO-263 3 g

VGS= 0 V, ID = 250 µA 100 V

VDS= VGS, ID = 250µA 2.5 5.0 V

VGS= ±20 VDC, VDS = 0 ±100 nA

VDS= V

DSS

25 µA

VGS= 0 V TJ = 125°C 250 µA

VGS= 10 V, ID = 0.5 I

D25

21 25 mΩ

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

V
I

D25

R

DSS

DS(on)

= 100 V
= 75 A
= 25 m

ΩΩ

Ω

ΩΩ

TO-3P (IXTQ)

G

D

S

(TAB)

TO-220 (IXTP)

G

D

S

(TAB)

TO-263 (IXTA)

G

S

(TAB)

G = Gate D = Drain
S = Source TAB = Drain

Features

z

International standard packages

z

Unclamped Inductive Switching (UIS)
rated

z

Low package inductance

- easy to drive and to protect

Advantages

z

Easy to mount

z

Space savings

z

High power density

PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.

© 2004 IXYS All rights reserved

DS99158(03/04)

IXTA 75N10P IXTP 75N10P

IXTQ 75N10P

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

Min. Typ. Max.

g

C

C

C

t

t

t

t

Q

Q

Q

R

R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCK

VDS= 10 V; ID = 0.5 I

, pulse test 20 28 S

D25

2250 pF

VGS = 0 V, VDS = 25 V, f = 1 MHz 890 pF

275 pF

27 ns

VGS = 10 V, VDS = 0.5 V

DSS

, ID = I

D25

53 ns

RG = 10 Ω (External) 66 ns

45 ns

74 nC

VGS= 10 V, VDS = 0.5 V

, ID = 0.5 I

DSS

D25

18 nC

40 nC

0.42 K/W

(TO-3P) 0.21 K/W
(TO-220) 0.25 K/W

Source-Drain Diode Characteristic Values

(T

Symbol Test Conditions Min. typ. Max.

= 25°C, unless otherwise specified)

J

TO-3P (IXTQ) Outline

I

S

I

SM

V

SD

VGS = 0 V 75 A

Repetitive 200 A

IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

IF = 25 A 120 ns

-di/dt = 100 A/µs

Q

RM

VR = 75 V 1.4 µC

TO-263 (IXTP) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110

b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055

c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055

D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320

E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC

L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015

R 0.46 0.74 .018 .029

TO-220 (IXTA) Outline

Pins: 1 - Gate 2 - Drain

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344