IXYS IXTQ 36N50P Service Manual
查询IXTQ36N50P供应商
Advanced Technical Information
PolarHV
TM
Power MOSFET
IXTQ 36N50P V
IXTT 36N50P I
N-Channel Enhancement Mode
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
TJ= 25°C to 150°C 500 V
TJ= 25°C to 150°C; RGS = 1 MΩ 500 V
±20 V
±30 V
TC= 25°C36A
TC= 25°C, pulse width limited by T
JM
100 A
TC= 25°C36A
TC= 25°C50mJ
TC= 25°C 1.5 J
DSS
D25
R
DS(on)
TO-3P (IXTQ)
G
D
TO-268 (IXTT)
= 500 V
= 36 A
≤≤
≤ 170 m
≤≤
S
ΩΩ
Ω
ΩΩ
D (TAB)
dv/dt I
≤ IDM, di/dt ≤ 100 A/μs, VDD≤ V
S
, 10 V/ns
DSS
TJ≤ 150°C, RG = 4 Ω
P
D
T
J
T
JM
T
stg
T
L
M
d
TC= 25°C 500 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
Plastic body 250 ° C
Mounting torque (TO-3P) 1.13/10 Nm/lb.in.
Weight TO-3P 5.5 g
TO-268 5.0 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
V
V
I
I
DSS
GS(th)
GSS
DSS
VGS= 0 V, ID = 250 μA 500 V
VDS= VGS, ID = 250μA 2.5 5.0 V
VGS= ±30 VDC, VDS = 0 ±100 nA
VDS= V
DSS
25 μA
VGS= 0 V TJ = 125°C 250 μA
G
S
G = Gate D = Drain
S = Source TAB = Drain
D (TAB)
Features
z
International standard packages
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
R
DS(on)
VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
D25
170 mΩ
DS99228(11/04)
IXTQ 36N50P
IXTT 36N50P
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS= 20 V; ID = 0.5 I
, pulse test 25 35 S
D25
VGS = 0 V, VDS = 25 V, f = 1 MHz 510 pF
VGS= 10 V, VDS = 0.5 I
D25
RG= 4 Ω (External) 82 ns
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
Min. Typ. Max.
4800 pF
60 pF
29 ns
23 ns
23 ns
135 nC
30 nC
65 nC
0.25 K/W
0.21 K/W
Source-Drain Diode Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
J
TO-3P (IXTQ) Outline
I
S
I
SM
V
SD
VGS = 0 V 36 A
Repetitive 100 A
IF = IS, VGS = 0 V, 1.5 V
TO-268 Outline
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
t
rr
Q
RM
IF = 25A, -di/dt = 100 A/μs 300 ns
VR = 100V 3.3 μC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
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