IXYS IXTQ 110N055P, IXTA 110N055P, IXTP 110N055P Service Manual
查询IXTA110N055P供应商
PolarHT
TM
Power MOSFET
IXTQ 110N055P
IXTA 110N055P
IXTP 110N055P
N-Channel Enhancement Mode
Symbol Test Conditions Maximum Ratings
V
V
V
V
I
D25
I
DRMS
I
DM
I
AR
E
E
DSS
DGR
GS
GSM
AR
AS
TJ= 25°C to 175°C55V
TJ= 25°C to 175°C; RGS = 1 MΩ 55 V
Continuous ±20 V
Tranisent ±30 V
TC= 25°C 110 A
External lead current limit 75 A
TC= 25°C, pulse width limited by T
JM
250 A
TC= 25°C 110 A
TC= 25°C30mJ
TC= 25°C 1.0 J
V
DSS
I
D25
R
DS(on)
TO-3P (IXTQ)
G
D
S
TO-220 (IXTP)
G
D
TO-263 (IXTA)
= 55 V
= 110 A
(TAB)
ΩΩ
Ω
ΩΩ
(TAB)
= 13.5 m
S
dv/dt I
≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V
S
, 10 V/ns
DSS
TJ≤ 150°C, RG = 10 Ω
P
D
T
J
T
JM
T
stg
T
L
TC= 25°C 330 W
-55 ... +175 °C
175 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
Maximum tab temperature for soldering 260 °C
TO-263 package for 10s
M
d
Mounting torque (TO-3P / TO-220) 1.13/10 Nm/lb.in.
Weight TO-3P 5.5 g
TO-220 4 g
TO-263 3 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
V
V
I
I
DSS
GS(th)
GSS
DSS
VGS= 0 V, ID = 250 μA55V
VDS= VGS, ID = 250μA 2.5 5.0 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
DSS
25 μA
VGS= 0 V TJ = 125°C 250 μA
G
S
(TAB)
G = Gate D = Drain
S = Source TAB = Drain
Features
z
International standard packages
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
R
DS(on)
VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
© 2005 IXYS All rights reserved
D25
11 13.5 mΩ
DS99182A(05/05)
IXTA 110N055P IXTP 110N055P
IXTQ 110N055P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 I
, pulse test 23 36 S
D25
2210 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 1400 pF
550 pF
27 ns
VGS = 10 V, VDS = 0.5 V
DSS
, ID = I
D25
53 ns
RG = 10 Ω (External) 66 ns
45 ns
76 nC
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
17 nC
33 nC
0.38 K/W
(TO-3P) 0.21 K/W
(TO-220) 0.25 K/W
Source-Drain Diode Characteristic Values
(T
Symbol Test Conditions Min. typ. Max.
= 25°C, unless otherwise specified)
J
TO-3P (IXTQ) Outline
I
S
I
SM
V
SD
VGS = 0 V 110 A
Repetitive 250 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
t
rr
IF = 25 A 120 ns
-di/dt = 100 A/μs
Q
RM
VR = 25 V 1.4 μC
TO-263 (IXTA) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
TO-220 (IXTP) Outline
Pins: 1 - Gate 2 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
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