查询IXTA110N055P供应商
PolarHT
TM
Power MOSFET
IXTQ 110N055P
IXTA 110N055P
IXTP 110N055P
N-Channel Enhancement Mode
Symbol Test Conditions Maximum Ratings
V
V
V
V
I
D25
I
DRMS
I
DM
I
AR
E
E
DSS
DGR
GS
GSM
AR
AS
TJ= 25°C to 175°C55V
TJ= 25°C to 175°C; RGS = 1 MΩ 55 V
Continuous ±20 V
Tranisent ±30 V
TC= 25°C 110 A
External lead current limit 75 A
TC= 25°C, pulse width limited by T
JM
250 A
TC= 25°C 110 A
TC= 25°C30mJ
TC= 25°C 1.0 J
V
DSS
I
D25
R
DS(on)
TO-3P (IXTQ)
G
D
S
TO-220 (IXTP)
G
D
TO-263 (IXTA)
= 55 V
= 110 A
(TAB)
ΩΩ
Ω
ΩΩ
(TAB)
= 13.5 m
S
dv/dt I
≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V
S
, 10 V/ns
DSS
TJ≤ 150°C, RG = 10 Ω
P
D
T
J
T
JM
T
stg
T
L
TC= 25°C 330 W
-55 ... +175 °C
175 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
Maximum tab temperature for soldering 260 °C
TO-263 package for 10s
M
d
Mounting torque (TO-3P / TO-220) 1.13/10 Nm/lb.in.
Weight TO-3P 5.5 g
TO-220 4 g
TO-263 3 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
V
V
I
I
DSS
GS(th)
GSS
DSS
VGS= 0 V, ID = 250 μA55V
VDS= VGS, ID = 250μA 2.5 5.0 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
DSS
25 μA
VGS= 0 V TJ = 125°C 250 μA
G
S
(TAB)
G = Gate D = Drain
S = Source TAB = Drain
Features
z
International standard packages
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
R
DS(on)
VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
© 2005 IXYS All rights reserved
D25
11 13.5 mΩ
DS99182A(05/05)
IXTA 110N055P IXTP 110N055P
IXTQ 110N055P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 I
, pulse test 23 36 S
D25
2210 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 1400 pF
550 pF
27 ns
VGS = 10 V, VDS = 0.5 V
DSS
, ID = I
D25
53 ns
RG = 10 Ω (External) 66 ns
45 ns
76 nC
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
17 nC
33 nC
0.38 K/W
(TO-3P) 0.21 K/W
(TO-220) 0.25 K/W
Source-Drain Diode Characteristic Values
(T
Symbol Test Conditions Min. typ. Max.
= 25°C, unless otherwise specified)
J
TO-3P (IXTQ) Outline
I
S
I
SM
V
SD
VGS = 0 V 110 A
Repetitive 250 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
t
rr
IF = 25 A 120 ns
-di/dt = 100 A/μs
Q
RM
VR = 25 V 1.4 μC
TO-263 (IXTA) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
TO-220 (IXTP) Outline
Pins: 1 - Gate 2 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
IXTA 110N055P IXTP 110N055P
d
IXTQ 110N055P
Fig. 1. Output Characteristics
@ 25
C
º
110
100
90
80
70
60
50
- Amperes
D
40
I
30
20
10
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V
D S
V
= 10V
GS
9V
- Volts
Fig. 3. Output Characteristics
@ 150
110
100
90
80
70
60
50
- A mp e res
D
I
40
30
20
10
0
0 0.4 0.8 1.2 1.6 2 2.4 2.8
V
V
GS
9V
- Volts
D S
C
º
= 10V
8V
7V
6V
5V
6V
5V
8V
7V
Fig. 2. Extended Output Characteristics
@ 25
C
220
200
180
160
140
120
100
- Amperes
80
D
I
60
40
20
0
012345678910
Fig. 4. R
DS(on
º
V
= 10V
GS
9V
8V
7V
6V
5V
V
- Volts
D S
Normalized to 0.5 I
)
Value vs. Junction Temperature
2.2
VGS = 10V
2
1.8
1.6
- Normali ze
1.4
D S ( o n )
1.2
R
1
0.8
-50 -25 0 25 50 75 100 125 150 175
T
I
= 110A
D
- Degrees Centigrade
J
ID = 55A
D25
Fig. 5. R
Value vs. Drain Current
2.8
2.6
2.4
2.2
2
1.8
- Normalized
1.6
1.4
D S ( o n )
VGS = 15V
1.2
R
1
0.8
0.6
0 25 50 75 100 125 150 175 200 225 250
Normalized to 0.5 I
DS(on)
VGS = 10V
I D - Amperes
TJ = 175ºC
D25
TJ = 25ºC
Fig. 6. Drain Current vs. Case
Temperature
120
100
80
60
- A mp e res
D
I
40
20
0
-50 -25 0 25 50 75 100 125 150 175
T
- Degrees Centigrade
C
© 2005 IXYS All rights reserved
IXTA 110N055P IXTP 110N055P
IXTQ 110N055P
Fig. 7 . Input Admitta nce
250
225
200
175
150
125
- Amperes
100
D
I
75
50
25
0
234567891011
V
G S
- Volts
TJ = -40ºC
25
150
º
º
C
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
300
250
200
150
- Amperes
S
I
100
T
= 150ºC
J
50
0
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
T
V
= 25ºC
J
S D
- Volts
Fig. 8. Transconductance
50
45
40
35
30
25
- Siemens
20
f s
g
15
10
5
0
0 50 100 150 200 250 300
I
- Am peres
D
TJ = -40ºC
25
150
Fig. 10. Gate Charge
10
V
DS
= 55A
I
D
= 10mA
I
G
= 22. 5 V
9
8
7
6
5
- Volts
G S
4
V
3
2
1
0
01020304050607080
Q G - nanoCoulombs
º
C
º
C
Fig. 11. Capacitance
10000
C
iss
1000
Capacitance - picoFarads
f = 1MHz
100
0 5 10 15 20 25 30 35 40
IXYS reserves the right to change limits, test conditions, and dimensions.
VDS - Volts
C
oss
C
rss
Fig. 12. Forw ard-Bias
Safe Operating Area
1000
R
Limit
DS(on)
100
- Amperes
D
I
10
DC
TJ = 175ºC
= 25ºC
T
C
1
110100
V
D S
- Volts
25µs
100µs
1ms
10ms
IXTA 110N055P IXTP 110N055P
IXTQ 110N055P
Fig. 13. Maximum Transient Thermal Resistance
1.00
ºC / W
-
0.10
( t h ) J C
R
0.01
0.1 1 10 100 1000
Pulse Width - m illiseconds
© 2005 IXYS All rights reserved
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