IXYS IXTP96P085T Datasheet

TrenchP

TM

Power MOSFETs

IXTA96P085T
IXTP96P085T
IXTH96P085T

V
I

R

D25

DSS

DS(on)

= - 85V
= - 96A

≤≤

≤ 13m

≤≤

ΩΩ

Ω

ΩΩ

P-Channel Enhancement Mode
Avalanche Rated

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GSS

V

GSM

I

D25

I

DM

I

A

E

AS

P

D

T

J

T

JM

T

stg

T

L

T

SOLD

M

d

Weight TO-263 2.5 g

TO-247 6.0 g

TJ= 25°C to 150°C - 85 V

TJ= 25°C to 150°C, RGS = 1MΩ - 85 V

Continuous ±15 V

Transient ±25 V

TC= 25°C - 96 A

TC= 25°C, Pulse Width Limited by T

JM

- 300 A

TC= 25°C - 48 A
TC= 25°C1J

TC= 25°C 298 W

-55 ... +150 °C
150 °C

-55 ... +150 °C

1.6mm (0.062 in.) from Case for 10s 300 °C
Plastic Body for 10s 260 °C

Mounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in.

TO-220 3.0 g

TO-263 AA (IXTA)

G

S

D (Tab)

TO-220AB (IXTP)

G

D

D (Tab)

S

TO-247 (IXTH)

G

D

S

D (Tab)

G = Gate D = Drain
S = Source Tab = Drain

Features

z

International Standard Packages

z

Avalanche Rated

z

Extended FBSOA

z

Fast Intrinsic Diode

z

Low R

DS(ON)

and Q

G

Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

V

I

GSS

I

DSS

DSS

GS(th)

VGS= 0V, ID = - 250μA - 85 V

VDS= VGS, ID = - 250μA - 2.0 - 4.0 V

VGS= ± 15V, VDS = 0V ±100 nA

VDS= V

, VGS = 0V - 10 μA

DSS

TJ = 125°C - 750 μA

R

DS(on)

© 2013 IXYS CORPORATION, All Rights Reserved

VGS= -10V, ID = 0.5 • I

, Note 1 13 mΩ

D25

Advantages

z

Easy to Mount

z

Space Savings

z

High Power Density

Applications

z

High-Side Switching

z

Push Pull Amplifiers

z

DC Choppers

z

Automatic Test Equipment

z

Current Regulators

z

Battery Charger Applications

DS100025B(01/13)

Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

IXTA96P085T IXTP96P085T
IXTH96P085T

TO-247 Outline

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g(on)

Q

gs

Q

gd

R

thJC

R

thCS

TO-247 0.21 °C/W

VDS = -10V, ID = 0.5 • I

, Note 1 40 66 S

D25

13.1 nF

VGS = 0V, VDS = - 25V, f = 1MHz 1175 pF

460 pF

Resistive Switching Times

= -10V, VDS = 0.5 • V

V

GS

DSS

RG = 1Ω (External)

, ID = 0.5 • I

D25

23 ns

34 ns

45 ns

22 ns

180 nC

VGS = -10V, VDS = 0.5 • V

, ID = 0.5 • I

DSS

D25

52 nC

62 nC

0.42 °C/W

TO-220 0.50 °C/W

Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

I

S

I

SM

V

SD

t

rr

Q

RM

I

RM

VGS = 0V - 96 A

Repetitive, Pulse Width Limited by T

JM

- 394 A

IF = - 48A, VGS = 0V, Note 1 -1.3 V

I

= - 48A, -di/dt = -100A/μs

F

V

= - 43V, VGS = 0V

R

55 ns
100 nC

- 3.6 A

Pins: 1 - Gate
2 - Drain

3 - Source

TO-220 Outline

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

TO-263 Outline

1. Gate

2. Drain

3. Source

4. Drain

IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.06 4.83 .160 .190
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055

c 0.40 0.74 .016 .029
c2 1.14 1.40 .045 .055

D 8.64 9.65 .340 .380
D1 8.00 8.89 .280 .320

E 9.65 10.41 .380 .405

E1 6.22 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.13 0 .005

Pins: 1 - Gate 2 - Drain

3 - Source

IXTA96P085T IXTP96P085T

V

V

V

V

V

V

IXTH96P085T

- Amperes

D

I

- Amperes

D

I

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

Fig. 1. Ou tp u t Characteristics @ TJ = 25ºC

V

= -10V

GS

- 9V

- 8V

- 7V

- 6

- Amperes

D

I

- 5

0

-1.4-1.2-1-0.8-0.6-0.4-0.20

VDS - Volts

Fig. 3. Ou tp u t Characteristics @ TJ = 125ºC

V

= -10V

GS

- 9V

- 8V

- 7V

- 6V

- Normalized

- 5V

0

-2-1.8-1.6-1.4-1.2-1-0.8-0.6-0.4-0.20

VDS - Volts

DS(on)

R

Fig. 2. Exten d ed Ou tp u t C h ar acter i sti cs @ TJ = 25ºC

-350

V

= -10V

GS

- 9V

-300

-250

-200

-150

-100

-50

0

- 8

- 7

- 6

VDS - Volts

Fig. 4. R

Normalized to ID = - 48A Value vs.

DS(on)

Junction Temperature

1.8

V

= -10V

GS

1.6

1.4

1.2

1.0

0.8

0.6

-50 -25 0 25 50 75 100 125 150

TJ - De gree s Ce ntigra de

I D = - 96A

I D = - 48A

- 5

-18-16-14-12-10-8-6-4-20

Fig. 5. R

Normalized to ID = - 48A Value vs.

DS(on)

Drain Current

1.8
VGS = -10V

1.6

1.4

- Normalized

1.2

DS(on)

R

1.0

0.8

© 2013 IXYS CORPORATION, All Rights Reserved

ID - Amperes

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum D rain Curr en t vs.

Case Temperatur e

-110

-90

-70

-50

- Amperes

D

I

-30

-10

-350-300-250-200-150-100-500

-50 -25 0 25 50 75 100 125 150

TC - De gree s Ce ntigra de

IXTA96P085T IXTP96P085T
IXTH96P085T

- Amperes

D

I

- Amperes

S

I

-140

-120

-100

-80

-60

-40

-20

-300

-250

-200

-150

-100

-50

Fig. 7. Input Admittance

T

= 125ºC

J

25ºC

- 40ºC

0

VGS - Volts

Fig. 9. Forward Voltage Drop of Intrinsic Diode

T

= 125ºC

J

TJ = 25ºC

0

VSD - Volts

Fig. 8. Transconductance

100

80

60

- Siemens

40

f s

g

20

-6.0-5.5-5.0-4.5-4.0-3.5-3.0-2.5

0

ID - Amperes

T

= - 40ºC

J

25ºC

125ºC

-140-120-100-80-60-40-200

Fig. 10. Gate C h ar g e

-10

-9

V

= - 43V

DS

I

= - 48A

D

-8
I

= -1mA

G

-7

-6

-5

- Volts

GS

-4

V

-3

-2

-1

-1.8-1.6-1.4-1.2-1.0-0.8-0.6-0.4-0.2

0

0 20 40 60 80 100 120 140 160 180

QG - N anoC oulombs

Fig. 11. Capacitance

100,000

= 1 MHz

f

C

iss

10,000

C

oss

1,000

Capacitance - PicoFarads

C

rss

100

-40-35-30-25-20-15-10-50

VDS - Volts

IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.

Fig. 12. Forward-B i as Safe Op er ati n g Area

-

1,000

R

Limit

DS(on)

100ms

-

100

- Amperes

D

I

10

-

TJ = 150ºC

T

= 25ºC

C

Single Pulse

-

1

---

110100

1ms

10ms

DC

100µs

VDS - Volts

25µs

IXTA96P085T IXTP96P085T
IXTH96P085T

Fig. 13. Re sis ti ve Turn-o n R i se Tim e vs.

Junction Temperature

44

R

40

36

32

28

- Nanoseconds

r

t

24

20

16

25 35 45 55 65 75 85 95 105 115 125

I D = - 48A

I D = - 24A

= 1Ω, VGS = -10V

G

= - 43V

V

DS

TJ - Degrees C entigr ade

Fig. 15. R esi sti ve Turn-o n Swi tch i n g Tim es vs.

Gate Resistance

200

180

160

140

120

100

- Nanoseconds

r

t

t

r

TJ = 125ºC, VGS = -10V

= - 43V

V

DS

80

60

40

20

0

0 2 4 6 8 101214161820

t

d(on)

- - - -

I D = - 48A, - 24A

RG - Ohms

Fig. 14. Re sis ti ve Turn-o n R i se Tim e vs.

Drain Current

44

R

= 1Ω, VGS = -10V

G

= - 43V

V

40

DS

36

32

- Nanoseconds

r

t

28

24

20

TJ = 25ºC

TJ = 125ºC

-48-46-44-42-40-38-36-34-32-30-28-26-24

ID - Amperes

Fig. 16. Resistive Turn-of f Switching Times vs.

Junctio n Temperatur e

70

65

60

t

d(on)

55

- Nanoseconds

50

45

40

35

30

25

20

26

t

25

24

23

22

- Nanoseconds

f

t

21

20

19

f

RG = 1Ω, VGS = -10V

= - 43V

V

DS

25 35 45 55 65 75 85 95 105 115 125

t

d(off)

- - - -

I D = - 24A

I D = - 48A

TJ - Degrees C entigr ade

70

65

t

60

d(off)

- Nanoseconds

55

50

45

40

35

Fig. 17 . Resistive T urn-off Swi tch ing T i mes vs.

Drain Current

25

tf t

24

23

22

- Nanoseconds

f

21

t

20

19

TJ = 25ºC, 125ºC

ID - Amperes

T

= 125ºC, V

J

= - 43V

V

DS

© 2013 IXYS CORPORATION, All Rights Reserved

d(off)

GS

- - - -

= - 10V

Fig. 18. R esi sti ve Turn-o ff Swi tch i n g Tim es vs.

Gate Resistance

66

62

t

d(off)

58

- Nanoseconds

54

50

46

42

-48-46-44-42-40-38-36-34-32-30-28-26-24

280

t

f

240

TJ = 125ºC, VGS = -10V

= - 43V

V

DS

200

160

120

- Nanoseconds

f

t

80

40

0

02468101214161820

t

d(off)

- - - -

I D = - 24A, - 48A

RG - Ohms

350

300

250

200

150

100

50

0

t

d(off)

- Nanoseconds

IXTA96P085T IXTP96P085T
IXTH96P085T

Fig. 19. Maximum Transien t Thermal Impedance

1

0.1

- ºC / W

(th)JC

Z

0.01

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Sec onds

IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: T_96P085T(A6)11-08-10-A