IXYS IXTP60N10T Datasheet

TrenchMV

TM

Power MOSFET

IXTA60N10T IXTP60N10T

N-Channel Enhancement Mode Avalanche Rated

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GSM

I

D25

I

DM

I

A

E

AS

P

D

T

J

T

JM

T

stg

T

L

T

SOLD

M

d

Weight TO-263 2.5 g

TJ= 25°C to 175°C 100 V TJ= 25°C to 175°C, RGS = 1MΩ 100 V

Transient ± 30 V

TC= 25°C60 A TC= 25°C, pulse width limited by T

JM

180 A

TC= 25°C10 A TC= 25°C 500 mJ

TC= 25°C 176 W

-55 ... +175 °C 175 °C

-55 ... +175 °C

1.6mm (0.062in.) from case for 10s 300 °C Plastic body for 10 seconds 260 °C

Mounting torque (TO-220) 1.13/10 Nm/lb.in

TO-220 3.0 g

V I

R

D25

DSS

DS(on)

= 100V = 60A

≤ ≤

18m

≤

≤ ≤

ΩΩ

Ω

ΩΩ

TO-263 (IXTA)

G

S

(TAB)

TO-220 (IXTP)

G

D

S

G = Gate D = Drain S = Source TAB = Drain

(TAB)

Features

z

International standard packages

z

175°C Operating Temperature

z

Avalanche Rated

z

Low R

DS(on)

Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max.

BV

V

I

GSS

I

DSS

GS(th)

VGS= 0V, ID = 250μA 100 V

VDS= VGS, ID = 50μA 2.5 4.5 V

VGS= ± 20V, VDS = 0V ± 100 nA

VDS= V

DSS

1 μA

VGS= 0V TJ = 150°C 100 μA

R

DS(on)

VGS= 10V, ID = 25A, Notes 1, 2 14.8 18 mΩ

Advantages

z

Easy to mount

z

Space savings

z

High power density

Applications

z

DC/DC Converters and Off-line UPS

z

Primary Switch for 24V and 48V

Systems

z

High Current Switching Applications

z

Distributed Power Architechtures and VRMs

z

Electronic Valve Train Systems

z

High Voltage Synchronous Recifier

DS99647B(08/08)

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

g

C

t

d(on)

t

r

t

d(off)

t

f

Q

R

fs

iss

oss

rss

g(on)

gs

gd

thJC

thCH

VDS= 10V, ID = 0.5 • I

, Note 1 25 42 S

D25

2650 pF

VGS = 0V, VDS = 25V, f = 1MHz 335 pF

60 pF

27 ns

Resistive Switching Times

V

= 10V, VDS = 0.5 • V

GS

R

= 15Ω (External)

G

DSS

, ID = 10A

40 ns

43 ns

37 ns

49 nC

VGS= 10V, VDS = 0.5 • V

, ID = 10A 15 nC

DSS

11 nC

0.85 °C/W

TO-220 0.50 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max.

I

S

I

SM

V

SD

t

rr

I

RM

Q

RM

VGS = 0V 60 A

Repetitive, pulse width limited by T

JM

240 A

IF = 25A, VGS = 0V, Note 1 1.2 V

= 0.5 • IS, VGS = 0V

I

F

-di/dt = 100A/μs

VR = 0.5 • V

DSS

59 ns

3.8

112 nC

IXTA60N10T

IXTP60N10T

TO-263 (IXTA) Outline

Pins: 1 - Gate 2 - Drain

3 - Source 4, TAB - Drain

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.06 4.83 .160 .190 A1 2.03 2.79 .080 .110

b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055

c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055

D 8.64 9.65 .340 .380 D1 7.11 8.13 .280 .320

E 9.65 10.29 .380 .405 E1 6.86 8.13 .270 .320 e 2.54 BSC .100 BSC

L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.38 0 .015

R 0.46 0.74 .018 .029

TO-220 (IXTP) Outline

A

Notes: 1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.

2. On through-hole packages, R

Kelvin test contact location must be

DS(on)

5mm or less from the package body.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Pins: 1 - Gate 2 - Drain

3 - Source 4, TAB - Drain

IXTA60N10T

IXTP60N10T

Fig. 1. Ou tp u t C h ar acteri sti cs

@ 25ºC

60

55

50

45

40

35

30

- Amperes

25

D

I

20

15

10

5

0

0.00.10.20.30.40.50.60.70.80.91.01.11.2

V

= 10V

GS

9V 8V

VDS - Volts

7V

6V

Fig. 3. Output Characteristics

@ 150ºC

60

55

50

45

40

35

30

- Amperes

25

D

I

20

15

10

5

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

V

GS

9V 8V

VDS - Volts

= 10V

7V

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

200

180

160

140

120

100

- Amperes

D

80

I

60

40

20

0

0 2 4 6 8 101214161820222426

VDS - Volts

Fig. 4. R

Normalized to ID = 30A Value

DS(on)

V

= 10V

GS

9V

8V

7V

6V

vs. Junction Temperature

2.8

V

2.6

2.4

2.2

2.0

1.8

1.6

- Normalized

1.4

DS(on)

1.2

R

1.0

0.8

0.6

0.4

-50 -25 0 25 50 75 100 125 150 175

GS

= 10V

I D = 60A

I D = 30A

TJ - Degrees Centigrade

Fig. 5. R

Normalized to ID = 30A Value

DS(on)

vs. Drai n Current

3.2

V

= 10V

3.0

2.8

2.6

2.4

2.2

2.0

- Normalized

1.8

DS(on)

1.6

R

1.4

1.2

1.0

0.8

GS

15V

0 15 30 45 60 75 90 105 120 135 150

- - - -

ID - Amperes

TJ = 175ºC

TJ = 25ºC

Fig. 6. Drain Current vs. Case Temperature

65

60

55

50

45

40

35

30

- Amperes

D

25

I

20

15

10

5

0

-50 -25 0 25 50 75 100 125 150 175

TC - Degrees Centigrade

IXTA60N10T

IXTP60N10T

Fig. 7. I n p u t Admittance

90

80

70

60

50

40

- Amperes

D

I

30

20

10

0

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5

T

= 150ºC

J

25ºC

- 40ºC

VGS - Volts

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

180

160

140

120

100

80

- Amperes

S

I

60

40

20

0

0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4

T

J

= 150ºC

TJ = 25ºC

VSD - Volts

Fig. 8. Transconductance

70

T

= - 40ºC

60

50

40

- Siemens

30

f s

g

20

10

0

0 102030405060708090

J

25ºC

150ºC

ID - Amperes

Fig. 10. Gate Charge

10

V

= 50V

9

8

7

6

- Volts

5

GS

V

4

3

2

1

0

DS

I

= 10A

D

I

= 10mA

G

0 5 10 15 20 25 30 35 40 45 50

QG - NanoCoulombs

Fig. 11. Capacitan ce

10,000

= 1 MHz

f

C

1,000

100

Capacitance - PicoFarads

10

0 5 10 15 20 25 30 35 40

iss

C

oss

C

rss

VDS - Volts

IXYS reserves the right to change limits, test conditions, and dimensions.

Fig. 12. Maximum T r an si en t Ther mal

Impedance

1.00

0.10

- ºC / W

(th)JC

Z

0.01

0.00001 0.0001 0.001 0. 01 0.1 1 10

Pulse Width - Seconds

IXYS REF: T_60N10T(2V)8-07-08-A

IXTA60N10T

IXTP60N10T

Fig. 13. Resistive Turn-on Rise Time

vs. Junction Tem perature

60

R

= 15Ω

55

50

45

40

- Nanoseconds

r

t

35

30

25

I D = 10A

25 35 45 55 65 75 85 95 105 115 125

I D = 30A

V

G

GS

DS

= 10V

= 50V

TJ - Degrees Centigrade

Fig. 15. R esi stive Turn -o n Swi tchi n g Times

vs. Gate Resi stan ce

170

t

r

TJ = 125ºC, VGS = 10V

V

DS

10A < I D < 30A

90

70

- Nanoseconds

t

150

130

110

r

= 50V

t

d(on)

- - - -

I D = 30A

I D = 10A

Fig. 14. Resistive Turn-on Rise Time

vs. Drai n C urren t

60

R

= 15Ω

G

= 10V

V

55

GS

= 50V

V

DS

50

45

40

- Nanoseconds

r

t

35

30

25

10 12 14 16 18 20 22 24 26 28 30

TJ = 25ºC

TJ = 125ºC

ID - Amperes

Fig. 16. R esi st i ve Tur n -o ff Sw it ch i n g Times

vs. Junction Tem perature

80

70

t

d(on)

60

- Nanoseconds

50

40

30

39

38

t

37

36

- Nanoseconds

f

35

t

f

RG = 15Ω, VGS = 10V

V

DS

t

d(off)

= 50V

- - - -

I D = 10A

I D = 30A

64

60

t

d(off )

56

- Nanoseconds

52

48

50

30

15 20 25 30 35 40 45 50 55

RG - Ohms

Fig. 17. R esi st i ve Tur n -o f f Swi tch i n g Times

vs. Drain Current

40

t

39

38

37

36

35

- Nanoseconds

f

t

34

33

32

10 12 14 16 18 20 22 24 26 28 30

TJ = 125ºC

f

RG = 15Ω, VGS = 10V

V

DS

TJ = 25ºC

ID - Amperes

= 50V

t

d(off)

- - - -

20

10

34

33

25 35 45 55 65 75 85 95 105 115 125

44

40

TJ - Degrees Centigrade

Fig. 18. R esi st i ve Tur n -o ff Sw it ch i n g Times

vs. Gate Resistance

67

63

t

d ( o f f )

59

55

- Nanoseconds

51

47

43

39

35

120

t

110

100

- Nanoseconds

f

t

90

80

70

60

50

40

30

f

TJ = 125ºC, VGS = 10V

V

DS

15 20 25 30 35 40 45 50 55

= 50V

t

d(off)

- - - -

I D = 10A, 30A

RG - Ohms

185

170

155

140

125

110

95

80

65

50

t

d(off )

- Nanoseconds

IXYS REF: T_60N10T(2V)8-07-08-A

IXYS IXTP60N10T Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual