Page 1
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
IXTA50N25T IXTQ50N25T
IXTP50N25T IXTH50N25T
V
I
D25
R
DSS
DS(on)
= 250V
= 50A
≤≤
≤ 60m
≤≤
ΩΩ
Ω
ΩΩ
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
G
D
S
D (Tab)
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
T
J
T
JM
T
stg
T
L
M
d
F
C
TJ= 25°C to 150°C 250 V
TJ= 25°C to 150°C, RGS = 1MΩ 250 V
Transient ± 30 V
TC= 25°C50A
TC= 25°C, Pulse Width Limited by T
JM
130 A
TC= 25°C 5 A
TC= 25°C 1.5 J
TC= 25°C 400 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6mm (0.062in.) from Case for 10s 300 °C
Plastic Body for 10 s 260 °C
Mounting Torque (TO-220, TO-3P &TO-247) 1.13 / 10 Nmlb.in.
Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.
Weight TO-263 2.5 g
TO-220 3.0 g
TO-3P 5.5 g
TO-247 6.0 g
TO-3P (IXTQ)
G
D
S
D (Tab)
TO-247 (IXTH)
G
D
S
G = Gate D = Drain
S = Source Tab = Drain
D (Tab)
Features
z
Avalanche Rated
z
High Current Handling Capability
z
Fast Intrinsic Rectifier
z
Low R
DS(on)
Advantages
z
High Power Density
z
Easy to Mount
z
Space Savings
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ . Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0V, ID = 1mA 250 V
VDS= VGS, ID = 1mA 3.0 5.0 V
VGS= ± 20V, VDS = 0V ± 100 nA
VDS= V
, VGS = 0V 1 μA
DSS
TJ = 125°C 150 μA
R
DS(on)
© 2010 IXYS CORPORATION, All Rights Reserved
VGS= 10V, ID = 0.5 • I
, Note 1 60 mΩ
D25
Applications
z
DC-DC Coverters
z
Battery Chargers
z
Switch-Mode and Resonant-Mode
Power Supplies
z
DC Choppers
z
AC and DC Motor Drives
z
Uninterrupted Power Supplies
z
High Speed Power Switching
Applications
DS99346B(01/10)
Page 2
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ . Max.
IXTA50N25T IXTQ50N25T
IXTP50N25T IXTH50N25T
g
C
C
C
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
R
R
fs
iss
oss
rss
g(on)
gs
gd
thJC
thCH
VDS= 10V, ID = 0.5 • I
, Note 1 35 58 S
D25
4000 pF
VGS = 0V, VDS = 25V, f = 1MHz 410 pF
60 pF
Resistive Switching Times
V
= 15V, VDS = 0.5 • V
GS
DSS
RG = 3.3Ω (External)
, ID = 0.5 • I
D25
14 ns
25 ns
47 ns
25 ns
78 nC
VGS= 10V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
19 nC
22 nC
0.31 °C/W
(TO-220) 0.50 °C/W
(TO-3P & TO-247) 0.25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ . Max.
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
VGS = 0V 50 A
Repetitive, Pulse Width Limited by T
JM
IF = IS, VGS = 0V, Note 1 1.5 V
I
= 25A, -di/dt = 250A/μs
F
VR = 100V, VGS = 0V
Note: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
200 A
166 ns
23 A
1.9 μC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Page 3
IXTA50N25T IXTQ50N25T
IXTP50N25T IXTH50N25T
TO-263 (IXTA) Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
TO-247 (IXTH) Outline
1 2 3
e
Terminals: 1 - Gate 2 - Drain
3 - Source
∅ P
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
1.65 2.13 .065 .084
b
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-220 (IXTP) Outline
Pins: 1 - Gate 2 - Drain
3 - Source
TO-3P (IXTQ) Outline
© 2010 IXYS CORPORATION, All Rights Reserved
Terminals: 1 - Gate 2 - Drain
3 - Source
Page 4
IXTA50N25T IXTQ50N25T
IXTP50N25T IXTH50N25T
Fig. 1. Ou tp u t C h ar acter i sti cs @ TJ = 25ºC
50
V
= 10V
45
40
35
30
25
- Amperes
D
20
I
15
10
5
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1. 6 1.8 2.0 2.2
GS
7V
6V
5V
VDS - Volts
Fig. 3. Ou tp u t C h ar acter i sti cs @ TJ = 125ºC
50
45
40
35
30
25
- Amperes
D
20
I
15
10
5
0
0.0 0.5 1.0 1.5 2.0 2. 5 3.0 3.5 4.0 4.5 5.0
VDS - Volts
V
GS
7V
= 10V
6V
5V
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
160
140
120
100
80
- Amperes
D
I
60
40
20
0
0 4 8 1216202428
V
Fig. 4. R
= 10V
GS
8V
7V
6V
5V
VDS - Volts
Normalized to ID = 25A Value vs.
DS(on)
Junction Temperature
3.2
V
= 10V
GS
I D = 50A
I D = 25A
-50 - 25 0 25 50 75 100 125 150
TJ - Degre es Centigra de
- Normalized
DS(on)
R
2.8
2.4
2
1.6
1.2
0.8
0.4
Fig. 5. R
Normalized to ID = 25A Value vs.
DS(on)
Drain Current
4.0
V
= 10V
3.5
3.0
2.5
- Normalized
2.0
DS(on)
R
1.5
1.0
0.5
GS
0 20 40 60 80 100 120 140
TJ = 125ºC
TJ = 25ºC
ID - Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 6. Maximum Drain C u r r en t vs.
Case Temper atu r e
55
50
45
40
35
30
25
- Amperes
D
I
20
15
10
5
0
-50 - 25 0 25 50 75 100 125 150
TC - Degre es Centigra de
Page 5
IXTA50N25T IXTQ50N25T
IXTP50N25T IXTH50N25T
Fig. 7. Input Admittance
100
90
80
70
60
50
- Amperes
D
40
I
30
20
10
0
3.6 4.0 4.4 4.8 5.2 5.6 6.0 6.4
T
= 125ºC
J
25ºC
- 40ºC
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
180
160
140
120
100
80
- Amperes
S
I
60
40
20
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
T
J
= 125ºC
TJ = 25ºC
VSD - Volts
Fig. 8. Transconductance
100
90
80
70
60
50
- Siemens
f s
40
g
30
20
10
0
0 102030405060708090100
T
= - 40ºC
J
25ºC
125ºC
ID - Amperes
Fig. 10. Gate C h ar ge
10
V
9
8
7
6
5
- Volts
GS
4
V
3
2
1
0
= 125V
DS
= 25A
I
D
= 10mA
I
G
0 1020304050607080
QG - NanoC oulombs
Fig. 11. Capacitance
10,000
1,000
Capacitance - PicoFarads
= 1 MHz
f
C
C
100
C
10
0 5 10 15 20 25 30 35 40
VDS - Volts
© 2010 IXYS CORPORATION, All Rights Reserved
iss
oss
rss
Fig. 12. Maximum T r an si en t Thermal I mped ance
1.00
0.10
- ºC / W
(th)JC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Wi dth - Seco nds
Page 6
IXTA50N25T IXTQ50N25T
(
)
(
)
(
)
(
)
IXTP50N25T IXTH50N25T
Fig. 13. R esi sti ve Turn -o n
Rise Time vs. Junc ti o n Tem p e rat u re
26
R
= 3.3
VGS = 15V
,
25
24
23
22
- Nanoseconds
r
t
21
20
19
25 35 45 55 65 75 85 95 105 115 125
I D = 25A
I D = 50A
V
G
= 125V
DS
TJ - De gree s Centigrade
Fig. 15. R esistive Turn-on
Switchin g Ti mes vs. Gate Resistance
38
t
r
34
TJ = 125ºC, VGS = 15V
V
= 125V
DS
30
26
- Nanoseconds
r
t
22
18
14
2468101214161820
t
d(on)
- - - -
I D = 25A, 50A
RG - Ohms
25
23
21
19
17
15
13
t
d
o n
- Nanoseconds
Fig. 14. Re sist i ve Turn -o n
Rise Time vs. Dr ain Current
26
25
24
R
= 3.3
VGS = 15V
,
G
V
= 125V
DS
23
- Nanoseconds
r
t
22
21
20
15 20 25 30 35 40 45 50
TJ = 25ºC
TJ = 125ºC
ID - Amperes
Fig. 16. Resistiv e Tur n -off
Switchin g Times vs. Jun cti o n Temperatu r e
28
27
26
25
24
23
22
- Nanoseconds
f
t
21
20
19
18
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
t
f
RG = 3.3, VGS = 15V
V
DS
I D = 25A
t
= 125V
I D = 50A
d(off)
- - - -
62
60
58
56
54
52
50
48
46
44
42
t
d
o f f
- Nanoseconds
Fig. 1 7. Resistive Turn-off
Switchin g Ti mes vs. D r ain Current
30
t
28
26
24
22
- Nanoseconds
f
t
20
18
16
15 20 25 30 35 40 45 50
f
RG = 3.3, VGS = 15V
V
= 125V
DS
t
- - - -
d(off)
TJ = 125ºC
ID - Amperes
TJ = 25ºC
TJ = 125ºC
TJ = 25ºC
66
62
d
58
o f f
54
50
46
42
38
t
- Nanoseconds
100
90
t
f
TJ = 125ºC, VGS = 15V
80
V
70
60
50
- Nanoseconds
f
t
40
30
20
10
DS
2 4 6 8 101214161820
Fig. 18. Re sis ti ve Turn -o ff
Switchin g Times vs. Gate Resi sta n ce
t
- - - -
d(off)
= 125V
RG - Ohms
I D = 25A, 50A
220
200
180
160
140
120
100
80
60
40
d
o f f
t
- Nanoseconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_50N25T(5G)01-26-10-A
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