IXYS IXTP3N120, IXTP3N110, IXTA3N110, IXTA3N120 Datasheet
High Voltage
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Preliminary Data Sheet
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight TO-220 4 g
TJ= 25°C to 150°C 3N120 1200 V
TJ= 25°C to 150°C; RGS = 1 MΩ 3N120 1200 V
Continuous ±20 V
Transient ±30 V
TC= 25°C3A
TC= 25°C, pulse width limited by T
TC= 25°C3A
TC= 25°C 20mJ
T
≤ 150°C, RG = 2 Ω
J
TC= 25°C 150 W
1.6 mm (0.063 in) from case for 10 s 300 °C
Mounting torque (TO-220) 1.13/10 Nm/lb.in.
TO-263 2 g
IXTA/IXTP 3N120
IXTA/IXTP 3N110
3N110 1100 V
3N110 1100 V
JM
, 5 V/ns
DSS
-55 to +150 °C
150 °C
-55 to +150 °C
12 A
700 mJ
V
DSS
1200 V 3 A 4.5
1100 V 3 A 4.0
I
D25
R
DS(on)
ΩΩ
Ω
ΩΩ
ΩΩ
Ω
ΩΩ
TO-220 (IXTP)
G
D
S
D (TAB)
TO-263 (IXTA)
G
S
D (TAB)
G = Gate D = Drain
S = Source TAB = Drain
Features
l
International standard packages
l
Low R
l
DS (on)
Rated for unclamped Inductive load
Switching (UIS)
l
Molding epoxies meet UL 94 V-0
flammability classification
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2001 IXYS All rights reserved
VGS= 0 V, ID = 1 m A 3N120 1200 V
3N110 1100 V
VDS= VGS, ID = 250 µA 2.5 4.5 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= 0.8 V
VGS= 0 V TJ = 125°C1mA
VGS= 10 V, ID = 0.5 I
Note 1 3N110 4.0 Ω
DSS
D25
TJ = 25°C25µA
3N120 4.5 Ω
Advantages
l
Easy to mount
l
Space savings
l
High power density
98844A (11/01)
IXTA/IXTP 3N120
IXTA/IXTP 3N110
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 • I
, Note 1 1.5 2.2 S
D25
1050 1300 pF
VGS= 0 V, VDS = 25 V, f = 1 MHz 100 125 pF
25 50 pF
17 n s
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
15 n s
RG = 4.7 Ω (External), 32 ns
18 n s
39 nC
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
9nC
22 nC
(TO-220) 0.25 K/W
0.8 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
TO-220 (IXTP) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
Bottom Side
I
S
I
SM
V
SD
t
rr
VGS= 0 V 3 A
Repetitive; pulse width limited by T
JM
12 A
IF = IS, VGS = 0 V, Note 1 1.5 V
IF = IS, -di/dt = 100 A/µs, VR = 100 V 700 ns
TO-263 (IXTA) Outline
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 B SC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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