IXYS IXTA2N80, IXTP2N80 Datasheet

Advanced Technical Information

High Voltage MOSFET

IXTA 2N80
IXTP 2N80

N-Channel Enhancement Mode
Avalanche Energy Rated

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

I

AR

E

AR

E

AS

dv/dt I

P

D

T

J

T

JM

T

stg

M

d

Weight 4 g

Maximum lead temperature for soldering 300 °C

Symbol Test Conditions Characteristic Values

V

DSS

V

GS(th)

I

GSS

I

DSS

R

DS(on)

TJ= 25°C to 150°C 800 V
TJ= 25°C to 150°C; RGS = 1 MΩ 800 V

Continuous ±20 V
Transient ±30 V

TC= 25°C2A
TC= 25°C, pulse width limited by T

TC= 25°C6mJ
TC= 25°C 200 mJ

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

S

TJ≤ 150°C, RG = 18 Ω
TC= 25°C54W

Mounting torque 1.13/10 Nm/lb.in.

VGS= 0 V, ID = 250 µA 800 V
VDS= VGS, ID = 250 µA 2.5 5.5 V

VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V

VGS= 0 V TJ = 125°C 500 µA
VGS= 10 V, ID = 0.5 I

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

DSS

D25

JM

, 5 V/ns

DSS

-55 ... +150 °C

-55 ... +150 °C

(TJ = 25°C, unless otherwise specified)

min. typ. max.

8A
2 A

150 °C

25 µA

6.2 Ω

V

DSS

I

D25

R

DS(on)

TO-220AB (IXTP)

G

TO-263 AA (IXTA)

G = Gate, D = Drain,
S = Source, TAB = Drain

Features

= 800 V
= 2 A

= 6.2

D

S

G

S

D (TAB)

D (TAB)

Ω Ω

Ω

Ω Ω

 International standard packages
 Low R

HDMOSTM process

DS (on)

 Rugged polysilicon gate cell structure
 Low package inductance (< 5 nH)

- easy to drive and to protect

 Fast switching times

Applications

 Switch-mode and resonant-mode

power supplies

 Flyback inverters
 DC choppers

Advantages

 Space savings
 High power density

IXYS reserves the right to change limits, test conditions, and dimensions.

© 2000 IXYS All rights reserved

98541A 03/24/00

1 - 2

IXTA 2N80
IXTP 2N80

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g
C

C
C

t
t
t
t

Q
Q
Q

R
R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCK

VDS= 20 V; ID = 0.5 • I

VGS= 0 V, VDS = 25 V, f = 1 MHz 56 pF

VGS= 10 V, VDS = 0.5 • V
RG= 18Ω, (External) 30 ns

VGS= 10 V, VDS = 0.5 • V

(IXTP) 0.5 K /W

, pulse test 1.0 2.0 S

D25

440 pF

15 pF
15 ns

, ID = 0.5 I

DSS

D25

18 ns

15 ns
22 nC

, ID = 0.5 I

DSS

D25

5.5 nC
12 nC

2.3 K/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

I

S

I

SM

V

SD

VGS= 0 V 2 A
Repetitive; pulse width limited by T

JM

8A

IF= IS, VGS = 0 V, 1.8 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

TO-263 AA (IXTA) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110

b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055

c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055

D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320

E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC

L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015

R 0.46 0.74 .018 .029

TO-220 AB (IXTP) Outline

t

rr

IF= IS, -di/dt = 100 A/µs, VR = 100 V 510 ns

© 2000 IXYS All rights reserved

Dim. Millimeter Inches

Min. Max. Min. Max.

A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630

C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161

E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125

G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230

J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC

M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055

Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

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