IXYS IXTP 1R6N50P, IXTY 1R6N50P Service Manual

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Advance Technical Information

PolarHV

TM

Power MOSFET

IXTP 1R6N50P
IXTY 1R6N50P

N-Channel Enhancement Mode

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

I

AR

E

AR

E

AS

TJ= 25°C to 150°C 500 V
TJ= 25°C to 150°C; RGS = 1 MΩ 500 V

Continuous ±30 V

Transient ±40 V

TC= 25°C 1.6 A
TC= 25°C, pulse width limited by T

JM

2.5 A

TC= 25°C 1.6 A
TC= 25°C5mJ
TC= 25°C75mJ

V

DSS

I

D25

R

DS(on)

TO-252 (IXTY)

TO-220 (IXTP)

= 500 V
= 1.6 A

≤≤

6.5

≤

≤≤

G

S

ΩΩ

Ω

ΩΩ

(TAB)

TAB

dv/dt I

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

S

, 10 V/ns

DSS

TJ≤ 150°C, RG = 50 Ω

P

D

T

J

T

JM

T

stg

T

L

TC= 25°C43W

-55 ... +150 °C
150 °C

-55 ... +150 °C

1.6 mm (0.062 in.) from case for 10s 300 °C
Maximum tab temperature for soldering 260 °C
TO-252 package for 10s

M

Mounting torque (TO-220) 1.13/10 Nm/lb.in.

d

Weight TO-252 0.8 g

TO-220 4 g

Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

V

V

I

I

DSS

GS(th)

GSS

DSS

VGS= 0 V, ID = 250 µA 500 V

VDS= VGS, ID = 250 µA 3.0 5.5 V

VGS= ±30 VDC, VDS = 0 ±100 nA

VDS= V

DSS

5 µA

VGS= 0 V TJ = 125°C50µA

G

(TAB)

D

S

G = Gate D = Drain
S = Source TAB = Drain

Features

z

International standard packages

z

Unclamped Inductive Switching (UIS)
rated

z

Low package inductance

- easy to drive and to protect

Advantages

z

Easy to mount

z

Space savings

z

High power density

R

DS(on)

VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

© 2005 IXYS All rights reserved

D25

6.5 Ω

DS99441(09/05)

IXTP 1R6N50P
IXTY 1R6N50P

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

Min. Typ. Max.

g

C

C

C

t

t

t

t

Q

Q

Q

R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

VDS= 20 V; ID = 0.5 I

, pulse test 0.7 1.4 S

D25

140 pF

VGS = 0 V, VDS = 25 V, f = 1 MHz 20 pF

2.6 pF

10 ns

VGS = 10 V, VDS = 0.5 V

, ID =0.5 I

DSS

D25

16 ns

RG = 20 Ω (External) 25 n s

16 ns

3.9 nC

VGS= 10 V, VDS = 0.5 V

, ID = 0.5 I

DSS

D25

1.4 nC

1.3 nC

2.9 K/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions Min. typ. Max.

I

S

I

SM

V

SD

VGS = 0 V 1.6 A

Repetitive 2.5 A

IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

TO-252 AA Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 2.19 2.38 0.086 0.094

A1 0.89 1.14 0.035 0.045

A2 0 0.13 0 0.005

b 0.64 0.89 0.025 0.035

b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215

c 0.46 0.58 0.018 0.023

c1 0.46 0.58 0.018 0.023

D 5.97 6.22 0.235 0.245

D1 4.32 5.21 0.170 0.205

E 6.35 6.73 0.250 0.265

E1 4.32 5.21 0.170 0.205

e 2.28 BSC 0.090 BSC

e1 4.57 BSC 0.180 BSC

H 9.40 10.42 0.370 0.410

L 0.51 1.02 0.020 0.040

L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115

TO-220 Outline

t

rr

IF = 1.6 A, -di/dt = 100 A/µs 400 ns
VR = 100V

Pins: 1 - Gate 2 - Drain

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463